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Contactless parametric characterization of bandgap engineering in p-type FinFETs using spectral photon emission
摘要： In the last decade it has become increasingly popular to use germanium enriched silicon in modern field effect transistors (FET) due to the higher intrinsic mobility of both holes and electrons in SiGe as compared to Si. Whether used in the source/drain region (S/D) as compressive stressor, which is an efficient mobility booster on Si channel devices, or as channel material, the SiGe increases channel carrier mobility and thus enhancing device performance. Because the germanium content modifies the effective bandgap energy EG, this material characteristic is an important technology performance parameter. The bandgap energy can be determined in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is used here as a non-destructive method to characterize engineered bandgaps in operative transistor devices, while the device remains fully functional. Before applying the presented technique to a p-type FinFET device, it is put to the proof by verifying the nominal silicon bandgap on an (unstrained) 120 nm technology FET. Subsequently the characterization capability for bandgap engineering is then successfully demonstrated on a SiGe:C heterojunction bipolar transistor (HBT). In a final step, the bandgap energy EG of a 14/16 nm p-type FinFET was determined to be 0.84 eV, which corresponds to a Si0.7Ge0.3 mixture. The presented characterization technique is a contactless fault isolation method that allows for quantitative local investigation of engineered bandgaps in p-type FinFETs.
关键词： p-n junction,Heterojunction bipolar transistor,Bandgap characterization,p-channel FinFET,SiGe, strained Si,Body diode, parasitic operation,Bandgap engineering,Body bias voltage,HBT,Contactless fault isolation,Spectral photon emission,MOSFET
更新于2025-09-23 15:23:52
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Apply DFT Integrated Enhanced EBAC Methodology on Defect Isolations
摘要： Design for test (DFT) has been widely applied to digital circuit failure analysis (FA) in semiconductor industries. The FA methods based on DFT involve layer-by-layer checks using a polisher and an SEM for defect identification and localization. Yet these methods have limitations with high risks of sample damages. Besides, they are highly dependent on the technical proficiencies of operators and, thus, they are not effective for precise defect isolations. This problem has been aggravated, especially at advanced nodes. The nano-probing electron beam absorbed current (EBAC) has significant advantages on precisely locating defects. This technique is to directly identify specific defects without layer-by-layer checks. Therefore, it can minimize sample damages during sample pretreatment. EBAC is an efficient technique to isolate the defects when the circuit is at the floating condition. Because the ground lines exist almost everywhere in a chip and they are for, e.g., electronic static discharge charge releases or connecting with sources for pickup, EBAC becomes a natural option for us. However, due to poor EBAC images, EBAC’s applications are restricted when the circuits under test have grounding paths. In this paper, we propose two enhanced EBAC analysis methods, based on the DFT and EBAC integrated system, for the defect isolations with grounded connections. It is the first time the DFT and EBAC integrated system is reported, and we successfully demonstrated EBAC applicability by real FA cases.
关键词： Design for test (DFT),Grounding line,Fault isolation,Electron beam absorbed current (EBAC),Failure analysis (FA)
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hangzhou, China (2019.7.2-2019.7.5)] 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) - Practical Dynamic Laser Stimulation Technique and Code Modification: A Soft Defect Localization Approach for Microcontroller Self-Test Failures
摘要： A practical alternative for soft defect localization (SDL) and fault isolation of dynamic failures is presented. The approach utilizes an existing optical beam induced resistance change (OBIRCH) hardware without a dynamic laser stimulation (DLS) add-on kit, coupled with an exhaustive electrical sample prep step which involves code modification. The technique was proven effective in localizing failures pertaining to resistive interconnects which are rather difficult to analyze using conventional static techniques.
关键词： Self-test code,Fault isolation,Soft-defect localization,Dynamic failures,Dynamic laser stimulation
更新于2025-09-23 15:19:57
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Characterization of Bandgap Engineering on Operative Transistor Devices by Spectral Photon Emission
摘要： In modern IC technologies, it is very common to use germanium enriched silicon in order to increase field effect transistor (FET) channel carrier mobility for high performance. The germanium content modifies the effective semiconductor band gap EG. Thus, the bandgap energy EG is an important technology performance parameter. EG can be obtained in an LED-like operation of electronic devices, requiring forward biased p-n junctions. P-n junctions in FETs are source or drain to body diodes, usually grounded or reversely biased. This investigation applies a bias to the body that can trigger parasitic forward operation of the source/drain to body p-n junction in any FET. Spectral photon emission (SPE) is taken here as non-destructive in operative method to characterize engineered bandgaps transistor devices, while the device remains fully functional. Proving this technique with the nominal silicon bandgap on an (unstrained) 120nm technology FET, the characterization capability for bandgap engineering is successfully demonstrated using SiGe:C HBT. In IC technology, Ge enriched silicon is recently often used to increase channel carrier mobility. As a next step, 14/16nm p-type FinFET devices have been investigated by applying a bias voltage to the body and thereby activating one of the body/diffusion p-n junctions in forward bias. By measuring the spectral distribution of emission intensity through the backside of the operating device with an InGaAs detector, EG of the engineered bandgap can be determined in the FinFETs as well, in case of the investigated p-type FinFETs to 0.84 eV. This opens a new path for contactless fault isolation by quantitative local determination of bandgap engineering.
关键词： Bandgap engineering,body diode,heterojunction bipolar transistor,body bias voltage,contactless fault isolation,parasitic operation,FinFET,germanium,MOSFET,p-n junction,bandgap characterization,spectral photon emission,SiGe,HBT
更新于2025-09-04 15:30:14