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- 摘要
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Analysis and design of a multi-channel constant current LED driver based on DC current bus distributed power system structure
摘要： In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (VF), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of ～1 nA/mm and an ION/IOFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (～1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the dif?cult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I–V characterization, and a more ALE-dependent dynamic ON-resistance is observed.
关键词： atomic layer etching (ALE),200-mm,leakage,metal–insulator–semiconductor high-electron mobility transistor (MISHEMT),GET-SBD,diode,AlGaN/GaN
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE International Conference on Mechatronics and Automation (ICMA) - Tianjin, China (2019.8.4-2019.8.7)] 2019 IEEE International Conference on Mechatronics and Automation (ICMA) - Optimization of Spectroscope Parameters for Single-beam Pulsed Laser Scanning Circumferential Detection System
摘要： In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (VF), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of ～1 nA/mm and an ION/IOFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (～1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the difficult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I–V characterization, and a more ALE-dependent dynamic ON-resistance is observed.
关键词： leakage,diode,AlGaN/GaN,GET-SBD,metal–insulator–semiconductor high-electron mobility transistor (MISHEMT),200-mm,atomic layer etching (ALE)
更新于2025-09-23 15:19:57
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[IEEE 2019 International Conference on Mechatronics, Robotics and Systems Engineering (MoRSE) - Bali, Indonesia (2019.12.4-2019.12.6)] 2019 International Conference on Mechatronics, Robotics and Systems Engineering (MoRSE) - Bottled Water Identification & Fraud Detection Using Spectroscopy & Convolutional Neural Network
摘要： In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (VF), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of ～1 nA/mm and an ION/IOFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (～1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the dif?cult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I–V characterization, and a more ALE-dependent dynamic ON-resistance is observed.
关键词： atomic layer etching (ALE),200-mm,leakage,metal–insulator–semiconductor high-electron mobility transistor (MISHEMT),GET-SBD,diode,AlGaN/GaN
更新于2025-09-19 17:13:59