研究目的
Investigating the impact of anode recess on the reverse leakage current, forward voltage, and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination on 200-mm silicon substrates.
研究成果
The study demonstrates a gradual reverse leakage current reduction in GET-SBDs by improving electrostatic control through anode recessing. GET-SBDs with six ALE cycles achieved a median leakage of ～1 nA/mm and a forward voltage of 1.3 V. The ALE process can create variations at the AlGaN surface, leading to a larger spread of VF and RON. Dynamic characterization shows stable forward characteristics with a small ALE-dependence.
研究不足
The study is limited to Au-free AlGaN/GaN Schottky barrier diodes with gated edge termination on 200-mm silicon substrates. The control of the remaining AlGaN thickness and surface quality after six ALE cycles presents challenges.
1：Experimental Design and Method Selection:
The study involved increasing the number of atomic layer etching (ALE) cycles for anode recessing to investigate its impact on the diodes' electrical characteristics.
2：Sample Selection and Data Sources:
AlGaN/GaN Schottky barrier diodes with gated edge termination (GET-SBDs) on 200-mm silicon substrates were used.
3：List of Experimental Equipment and Materials:
Agilent 4073 Ultra Advanced Parametric Tester and Agilent B1505A Semiconductor Device Analyzer were used for measurements.
4：Experimental Procedures and Operational Workflow:
Forward and reverse characterizations were performed, and pulsed I–V measurements were conducted to evaluate dynamic stability.
5：Data Analysis Methods:
Statistical analysis of leakage current, forward voltage, and dynamic characteristics was performed, and TCAD simulations were used to verify experimental results.
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