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990 nm High-power High-beam-quality DFB Laser With Narrow Linewidth Controlled By Gain-coupled Effect
摘要： High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. A continuous-wave power of over 0.681 W is achieved at 3 A. The maximum continuous-wave power at single-longitudinal-mode operation is up to 0.303 W at 1.4 A. Narrow linewidth emission has been reached with a 3 dB spectrum width less than 1.41 pm. The high side mode suppression ratio is over 35 dB. The lateral far field divergence angle is only 15.05 °, the beam quality factor M 2 is 1.245, achieving a laterally near-diffraction-limit emission. It is more beneficial for single mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique.
关键词： narrow linewidth,Single-longitudinal mode,Gain-coupled DFB,Semiconductor lasers
更新于2025-11-28 14:24:03
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High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography
摘要： In this paper, we demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser. It is designed based on periodic surface current injection to reach a high-power and single-longitudinal mode. A continuous-wave output power of over 1.2 W/facet is achieved at 4 A. High single-longitudinal-mode output power reaches up to 0.9 W/facet at 3 A at each uncoated facet. The side mode suppression ratio is nearly 30 dB at 980 nm. The 3 dB spectral width is less than 2.7 pm. The lateral far field divergence angle is only 14.5 °, the beam quality factor M2 is 1.7, achieving a near-diffraction-limit emission. Our device, produced by standard i-line lithography, enhances the output power while obtaining the pleasurable spectral and spatial properties. It has great potential in widespread commercial applications such as high efficiency pumping sources for its low-cost, easy fabrication technique and excellent performance.
关键词： Double-tapered,Distributed feedback lasers,Gain-coupled,Semiconductor lasers
更新于2025-11-28 14:24:03
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Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography
摘要： A narrow-strip single-longitudinal-mode gain-coupled distributed feedback semi-conductor laser with a central wavelength of approximately 670 nm is demonstrated. We fabricate a novel micro-scale regrowth-free gain-coupled grating with an island-like shape without nanoscale gratings by i-line lithography only. The maximum output power from the ?ber of the device with butter?y package is 48.1 mW at 100 mA and its slope ef?ciency is 0.79 W/A. The laser can be continuously tuned from 670.750 to 670.784 nm with a side-mode suppression ratio of over 40 dB, covering the absorptive peak of lithium atoms. Our easily fabricated devices have great potential as light sources in many applications such as lithium atom detectors.
关键词： continuous tunability,gain-coupled,distributed-feedback,Semiconductor laser
更新于2025-11-28 14:23:57