研究目的
To demonstrate a narrow-strip single-longitudinal-mode gain-coupled distributed feedback semiconductor laser with a central wavelength of approximately 670 nm, fabricated using a novel micro-scale regrowth-free gain-coupled grating with an island-like shape without nanoscale gratings by i-line lithography only.
研究成果
The study successfully demonstrates a narrow-strip single-longitudinal-mode gain-coupled DFB semiconductor laser with a central wavelength of approximately 670 nm. The laser achieves good performance with a maximum output power of 48.1 mW and a slope efficiency of 0.79 W/A. The device shows potential for applications in lithium atom detection and other areas requiring stable, single-longitudinal-mode lasers.
研究不足
The study does not address the long-term reliability of the fabricated lasers under continuous operation. The fabrication process, while simpler than previous methods, still requires precise control over lithography and etching parameters.
1：Experimental Design and Method Selection:
The study involves the fabrication of a gain-coupled DFB semiconductor laser using i-line lithography and conventional ICP etching. The design includes periodic anodes injection to achieve a gain coupling mechanism.
2：Sample Selection and Data Sources:
The samples are fabricated on AlGaInP/GaInP quantum wells emitting at 670 nm.
3：List of Experimental Equipment and Materials:
Includes i-line lithography equipment, ICP etcher, MOCVD for epitaxial growth, and a YOKOGAWA AQ6370C spectrum analyzer for measurements.
4：Experimental Procedures and Operational Workflow:
The process involves deposition of an island-like photoresist layer, etching to form periodic island-like trenches, deposition of silica for insulation, and formation of periodic metal p-contact.
5：Data Analysis Methods:
The performance of the laser is analyzed based on output power, slope efficiency, and side-mode suppression ratio.
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