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Simulation Model Development for Packaged Cascode Gallium Nitride Field-Effect Transistors
摘要： This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT). Using the JFET to simulate the MIS-HEMT not only ensures that the curve fits an S-shape transfer characteristic but also enables the pinch-off voltages extracted from the threshold voltage of the MIS-HEMT to be used as a watershed to distinguish where the drop in parasitic capacitance occurs. Parameter extraction was based on static and dynamic characteristics, which involved simulating the behavior of the created GaN FET model and comparing the extracted parameters with experimental measurements to demonstrate the accuracy of the simulation program with an integrated circuit emphasis (SPICE) model. Cascode capacitance was analyzed and verified through experimental measurements and SPICE simulations. The analysis revealed that the capacitance of low-voltage MOSFETs plays a critical role in increasing the overall capacitance of cascode GaN FETs. The turn-off resistance mechanism effectively described the leakage current, and a double-pulse tester was used to evaluate the switching performance of the fabricated cascode GaN FET. LTspice simulation software was adopted to compare the experimental switching results. Overall, the simulation results were strongly in agreement with the experimental results.
关键词： turn-off resistance,GaN FET,MIS-HEMT,SPICE,cascode,behavioral model,parasitic capacitance
更新于2025-09-10 09:29:36
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Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
摘要： In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwidth (BW) of 70–110 GHz, the three-stage PA can deliver, on average, 25.6 dBm with a power-added efficiency (PAE) of 6.5%, while the four-stage PA is able to generate 27 dBm with a PAE of 6.1%. A peak output power of 28.6 dBm is achieved at 80 GHz with a PAE of 8.6%, which corresponds to a power density of 2.6 W/mm. The significant BW was achieved partially by incorporating a novel type of broadband radial stub into the design, which can provide nearly a twofold rejection-BW improvement over the conventional version. To the best of our knowledge, no other solid-state circuit can deliver such power levels over the complete W-band.
关键词： monolithic microwave integrated circuit (MMIC),Broadband,power amplifier (PA),high-electron-mobility transistor (HEMT),W-band (75–110 GHz),radial stub,gallium nitride,millimeter-waves (mm-waves)
更新于2025-09-09 09:28:46
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Trapping Effects Induced by Gate OFF-State Stress in AlGaN/GaN High-Electron-Mobility Transistors with Fe-Doped Buffer
摘要： This paper investigates the trapping characteristics in passivated Al0.23Ga0.77N/GaN High-Electron-Mobility transistors (HEMTs) with an Fe-doped buffer on Sapphire substrate. Double pulsed current–voltage (I–V ) measurements clearly exhibited the current collapse and slow detrapping transients characteristics. It is attributed to the injection of electron from gate to the traps located in the interface, the Al0.23Ga0.77N barrier and the Fe-doped buffer. By various pulse-widths of 0.5 μs, 5 μs, 10 μs, 50 μs and 0.1 ms and amplitudes of pulse-baseline (VGS-Q, VDS-Q) of ?6 V and ?8 V, we spatially analyzed the locations and corresponding detrapping time constants of the dominant traps in the device. Three different types of traps were found: a fast one with the time constant τ = 12–16 μs at the interface under gate, a middle one with τ = 0.12 ms in the AlGaN barrier layer, and a slow one in the Fe-doped GaN buffer under high reverse OFF-state stress with τ = 1.78 ms. Thus in the high voltage applications, the buffer-related deep traps are most significant.
关键词： Gate OFF-State Stress,Fe-Doped Buffer,Pulsed I–V,AlGaN/GaN HEMT,Trapping
更新于2025-09-09 09:28:46
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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with 80 nm Gates
摘要： Al-rich AlGaN-channel high electron mobility transistors (HEMTs) with 80 nm long gates and 85% (70%) Al in the barrier (channel) were evaluated for RF performance. DC characteristics include a maximum current of 160 mA/mm with transconductance of 24 mS/mm, limited by source and drain contacts, and an on/off current ratio of 109. fT of 28.4 GHz and fMAX of 18.5 GHz were determined from small-signal S-parameter measurements. Output power density of 0.38 W/mm was realized at 3 GHz in a power sweep using on-wafer load pull techniques.
关键词： high electron mobility transistor,Ultra-wide-bandgap,RF performance,HEMT,aluminum gallium nitride
更新于2025-09-09 09:28:46
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The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors
摘要： Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm?2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.
关键词： high-electron-mobility transistor (HEMT),proton irradiation,Gallium nitride (GaN),dynamic ON-resistance
更新于2025-09-09 09:28:46
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Hybrid Analog/Digital Linearization of GaN HEMT-Based Power Amplifiers
摘要： In this paper, we describe a hybrid analog/digital linearization scheme for GaN high-electron-mobility transistor (HEMT)-based power ampli?ers that consists of a novel analog feedforward circuit and a conventional generalized memory polynomial (GMP) digital predistorter (DPD). The analog circuit implements a nonlinear ?lter that compensates the long-term memory effects observed in GaN HEMTs due to the self-biasing behavior caused by electron-trapping phenomena. Experimental tests demonstrate that this linearization scheme achieves a level of intermodulation distortion 6.8 dB better than what can be achieved with just the use of the GMP DPD. This level of distortion is in compliance with the linearity speci?cations for multicarrier Global System for Mobile communications base station transmitters.
关键词： Analog linearization,long-term memory effects,GaN high-electron-mobility transistor (HEMT),power ampli?er (PA) linearization,digital predistortion (DPD),electron trapping
更新于2025-09-09 09:28:46
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Vertical Current Transport in AlGaN/GaN HEMTs on Silicon: Experimental Investigation and Analytical Model
摘要： We investigate the vertical leakage mechanism in metal–organic chemical vapor deposition-grown carbon (C)-doped AlGaN/GaN High Electron Mobility Transistors (HEMTs) on 6-in silicon wafer. Substrate bias polarity-dependentI–Vs, temperature-dependent ?tting, and band diagram analysis pointed to the Poole–Frenkel (P–F) type of conduction mechanism for vertical transport in the devices with breakdown as high as 580 V for a buffer of 4 μm. Trap activation energy of 0.61 eV was estimated from the P–F ?tting which matches well with values reported in the literature. We propose that higher dislocation density leads to shallower traps in the buffer and build an analytical model of dislocation-mediated vertical leakage around this. The variation in leakage as a function of dislocation density at a given ?eld is predicted and is found to be the most abrupt in the range from ～107 to ～109 cm?2 of dislocation density. This can be attributed to a sharp decrease in trap activation energy in the above range of dislocation density, possibly due to complex formation between point defects and dislocations.
关键词： high-electron mobility transistor (HEMT),vertical leakage,Poole–Frenkel (P–F),2-D electron gas,hopping conduction,AlGaN
更新于2025-09-09 09:28:46
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - A Procedure for GaN HEMT Charge Functions Extraction from Multi-Bias S-Parameters
摘要： A charge function identi?cation procedure for GaN-HEMTs is proposed. This is based on a frequency-domain integration of displacement current waveforms obtained from an auxiliary model extracted from multi-bias S-parameters. The method is compared with a similar technique recently proposed, which is instead based on direct acquisitions of large-signal waveforms at the transistor ports by means of a nonlinear vector network analyzer (NVNA). Comparisons between the two approaches are provided by using a 1-mm GaN-on-SiC HEMT, leading to conclude that thermal and trap-induced dispersion on charges have an impact quanti?ed in ～ 4% ? 18% normalized mean square error on the displacement current prediction, depending on the waveforms considered.
关键词： Charge conservative modeling,large-signal measurements,GaN HEMT,HEMT modeling
更新于2025-09-04 15:30:14
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X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power
摘要： High quality AlGaN/AlN/GaN high electron mobility transistors (HEMTs) were grown on 3-inch diameter semi-insulating 6H-SiC substrates by metal organic chemical vapor deposition. The GaN HEMT wafer exhibited an average sheet resistance of 342.2 Ω/□ with a uniformity of 1.5% by introducing both the high mobility GaN channel layer and AlN interlayer. At room temperature a Hall mobility of 2412.06 cm2/Vs and a two-dimensional electron gas density of 7.654 × 1012 cm?2 are achieved. Atomic force microscopy showed a smooth surface and a root-mean-square roughness of 0.227 nm for 10 × 10 μm2 scan area. Direct current measurements revealed a maximum drain current density of 1.31 A/mm and an extrinsic transconductance of 450 mS/mm. The current gain cutoff frequency and maximum frequency of oscillation of the device were measured to be 31 GHz and 60 GHz, respectively. Eight-cell internally-matched GaN HEMT device exhibited a maximum continuous-wave output power of 110.9 W at 8 GHz, with a power-added efficiency of 33.7% and a power gain of 6.35 dB.
关键词： X-Band,Power Amplifier,GaN HEMT
更新于2025-09-04 15:30:14
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Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
摘要： In this paper, the RF and DC characteristics of AlGaN/GaN High electron mobility transistor is analysed using discrete field plate technique. Surprisingly, it reduces the device parasitic capacitance exhibiting very low CGS and CGD of 5.8 ×10-13 F/mm and 4.2×10-13 F/mm respectively to improve the cut off frequency (fT) from 17.5 GHz to 20 GHz. The discrete field plate suppresses the maximum electric field between gate and drain region to achieve the high breakdown voltage of 330 V. The maximum transconductance (gm) achieved is 275 mS/mm, ensuring the better DC operation of the device. The simulated results clearly show that, the discrete field plate HEMTs are superior in performance over conventional GaN FP- HEMTs for future high frequency and high power applications.
关键词： cut off frequency,electric field,breakdown voltage,field plate,GaN HEMT
更新于2025-09-04 15:30:14