- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - Bangalore (2018.3.16-2018.3.17)] 2018 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) - AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric
摘要： AlInN/GaN metal insulator semiconductor high electron mobility transistor (MIS-HEMT) with high pressure oxidized aluminium as gate dielectric is investigated in this paper. The fabricated MIS-HEMT shows more than six orders of reduction in the gate leakage current in reverse bias and more than three orders of reduction in forward bias compared to the reference HEMT devices also fabricated on same substrates. A maximum drain current of 750 mA/mm was achieved due to improvement in the gate swing for MIS-HEMT. The MIS-HEMT devices also showed good improvement in the subthreshold slope and ID,ON/ID,OFF ratio compared to HEMT devices.
关键词： gate leakage current,MIS-HEMT,high pressure oxidation,AlInN/GaN,HEMT,Al2O3
更新于2025-09-23 15:23:52
-
Current linearity and operation stability in Al <sub/>2</sub> O <sub/>3</sub> -gate AlGaN/GaN MOS high electron mobility transistors
摘要： To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 °C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of ID–VG curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance–voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMT showed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures.
关键词： current linearity,interface states,MOS-HEMT,AlGaN/GaN,operation stability,bias annealing
更新于2025-09-23 15:23:52
-
A reliable and efficient small-signal parameter extraction method for GaN HEMTs
摘要： In this paper, a reliable and efficient parameter extraction method for GaN high electron mobility transistor (HEMT) small‐signal models has been proposed. By utilizing parameter scanning method, the initial values of the extrinsic elements are first extracted from the cold pinch‐off and cold unbiased measurement conditions, respectively. An iterative optimization algorithm is employed then to optimize the extrinsic elements. This scanning and iteration combined algorithm based on a direct extraction method of extrinsic elements can reduce the impact of the approximation error, which makes the determined values of the small‐signal parameters more reliable. The extraction flow has been realized in a Matlab program for efficiency. A 16‐element small‐signal equivalent circuit model (SSECM) for GaN HEMTs has been employed, and the new parameter extraction method has been validated by comparing the simulated small‐signal S‐parameters with the measured data from 0.1 GHz to 40 GHz for two different device dimensions.
关键词： small‐signal modeling,parameter extraction,GaN high electron mobility transistor (HEMT)
更新于2025-09-23 15:23:52
-
Low-phase noise 8.22 GHz GaN HEMT oscillator using a feedback multi-path transformer
摘要： This article designs a low-phase noise 8.22 GHz GaN high electron-mobility transistor (HEMT) oscillator in the WIN 0.25 μm GaN HEMT process. The oscillator uses a HEMT amplifier with a transformer as the feedback network. The transformer uses a 3-path secondary inductor and a single-path primary inductor. The GaN oscillator consumes the power 4.328 mW and generates a signal at 8.22 GHz with an output power ?11.35 dBm. At 1 MHz frequency offset from the carrier at 8.22 GHz the phase noise is ?120.82 dBc/Hz, the figure of merit of the proposed oscillator is ?192.76 dBc/Hz. The oscillator chip occupies an area of 2 × 1 mm2.
关键词： phase noise,3-path transformer,figure of merit,Q-factor,8.22 GHz GaN HEMT oscillator
更新于2025-09-23 15:23:52
-
Electronic band alignment in AlGaN/GaN high electron-mobility transistors investigated using scanning photocurrent microscopy
摘要： The band alignment in AlGaN/GaN HEMT devices was investigated using scanning photocurrent microscopy (SPCM) with UV and visible light sources. The polarity of the SPCM on the conduction channel exhibited a switching behavior from p-type to n-type response as the gate bias was increased. The ?at-band voltage, which was higher than the DC turn-on voltage, indicates that an ohmic metallic contact was formed for electron transport. We obtained the band o?set between the conduction band and the metal Fermi level, which yielded a value of 2.1 eV on average.
关键词： SPCM,GaN,2DEG,HEMT
更新于2025-09-23 15:23:52
-
[IEEE 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM) - Cuenca, Ecuador (2018.10.15-2018.10.19)] 2018 IEEE Third Ecuador Technical Chapters Meeting (ETCM) - Reliability in GaN-based devices for power applications
摘要： This paper analyzes two important reliability issues in AlGaN/GaN devices: positive bias temperature instability (PBTI) and time-dependent dielectric breakdown (TDDB). The summarized results of our previous PBTI studies in MOS-HEMTs show that the threshold voltage degradation in devices with SiO2 as gate dielectric is characterized by a universal decreasing behavior of the trapping rate parameter and is ascribed to charge trapping in the SiO2 and at the SiO2/GaN interface. On the contrary, the degradation observed in Al2O3- and AlN/Al2O3-gate stacks is mainly attributed to charge capture in the pre-existing dielectric traps with a negligible interface state generation. Additionally, the insertion of a thin AlN layer impacts on the device reliability because larger trap density, faster charge trapping, wider trap energy distribution and slower charge release are observed compared with devices without this layer. The dielectric importance of GaN-based devices has been also investigated in Schottky Barrier Diodes (SBDs) with a gated edge termination (GET). Our recent TDDB results indicate a narrower Weibull distribution, and a longer time to failure in devices with a double GET layer structure and with a thick passivation layer (2 GET-THICK) than in single GET devices with a thin passivation (1 GET-THIN). Therefore, the former structure is more suitable for high-power and high-temperature applications.
关键词： TDDB,AlGaN/GaN SBD,trapping,de-trapping,reliability,PBTI,breakdown voltage,GET,MOS-HEMT
更新于2025-09-23 15:23:52
-
[IEEE 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Shenzhen, China (2018.11.4-2018.11.7)] 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC) - Investigation of Temperature-Dependent Electrical Behavior and Trap Effect in AlGaN/GaN HEMT
摘要： Temperature-dependent electrical behavior and trap effect in AlGaN/GaN high-electron mobility transistors (HEMT) were investigated at temperatures ranging from 25°C to 125°C. The experiment results show that transfer curves negatively shift and transconductance degrades with the increase in temperature at DC and pulsed conditions, meanwhile, gate leakage current increases significantly. Besides, the shift variation of pulsed transfer curves becomes larger at the elevated temperature and static bias states. This mechanism could be attributed to the enhancement of electron-assisted tunneling ability and easily escaping from the traps for trapped electrons at higher temperature. These traps were confirmed on the base of low frequency noise technique under different temperatures, and the extracted activation energy is 0.521eV for the present devices. The above results may provide useful guidance for design and application of the AlGaN/GaN HEMT.
关键词： Trap Effect,GaN,HEMT,Low Frequency Noise,Temperature
更新于2025-09-23 15:23:52
-
Thermal Influence on S22 kink behavior of a 0.15-μm gate length AlGaN/GaN/SiC HEMT for microwave applications
摘要： Thermal influence on S22 kink behavior has been carried out on a 0.15-μm gate length AlGaN/GaN/SiC high electron mobility transistor over a wide range of temperature. The size and the shape of the S22 kink effect in terms of biasing and temperature have been evaluated. The main finding is that S22 of the studied device is affected by two kinks: the first one appears at approximately 19 GHz and then the second one appears at about 43 GHz. The impact of the intrinsic circuit parameters on the S22 kink phenomena is inspected to assess their contribution. In addition, a new procedure is proposed to quantify this type of phenomenon by defining the kink area as the area between the two curves corresponding to S22 with and without the kink effect. The relevance of this study emerges from the fact that an exhaustive characterization of these anomalous phenomena can empower RF engineers to effectively take them into account for both modeling and design purposes.
关键词： scattering parameter measurements,and temperature,0.15-μm gate length GaN on SiC HEMT,equivalent circuit,two S22 kinks
更新于2025-09-23 15:23:52
-
[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Reduced Current Collapse in AIGaN/GaN HEMTs with p-GaN Layer in Gate-Drain Access Region
摘要： For the purpose of reducing current collapse, we have studied a special structure of an AlGaN/GaN HEMT, in which an isolated p-GaN layer is located in the gate-drain access region. An addition of an isolated p-GaN layer resulted in significant suppression in current collapse by 98 %, as compared to the conventional HEMT. It was also found that current collapse was more effectively suppressed when the p-GaN region was located closer to the gate.
关键词： current collapse,HEMT,AlGaN/GaN,p-GaN layer
更新于2025-09-23 15:22:29
-
MPA-GSH functionalized AlGaN/ GaN High Electron Mobility Transistor based sensor for Cadmium ion detection
摘要： This work demonstrates a novel AlGaN/GaN high electron mobility transistor (HEMT) based cadmium ion (Cd2+) sensor with Mercaptopropionic Acid (MPA) and Glutathione (GSH) functionalization. The sensing response of the sensor was analysed by detecting Cd2+ ions at different concentrations. The AlGaN/GaN HEMT sensor exhibits excellent response with the sensitivity of 0.241 μA/ppb, a fast response time of ~ 3 seconds and a lower detection limit of 0.255 ppb. The observed lower detection limit is significantly lower than the World Health Organization (WHO) standard recommended limit for Cd2+ ions in drinking water. Furthermore, the sensor showed good selectivity of Cd2+ ions towards other heavy metal ions. The results indicate that the binding properties of GSH to Cd and the sensitivity of 2-D electron gas (2DEG) towards the variation of charges at the gate region makes the device highly sensitive with rapid detection of Cd2+ ions.
关键词： MPA,Cd2+ ions,AlGaN/GaN HEMT,sensing,GSH
更新于2025-09-23 15:22:29