- 标题
- 摘要
- 关键词
- 实验方案
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[IEEE 2017 14th IEEE India Council International Conference (INDICON) - Roorkee (2017.12.15-2017.12.17)] 2017 14th IEEE India Council International Conference (INDICON) - Extraction and de-embedding of S-parameters using small-signal modeling for AlGaN/GaN HEMTs
摘要： At high frequency, various structures such as probe, pads and the parameter measurement of HEMT device. To precisely measure the device intrinsic performance, it is required to de-embed these parasitic effects. In this paper, only two structures based de-embedding procedure is used to reach to the device plane. This paper shows difference between measured and extracted S-parameters based on Berroth and Meras model, with de-embedding and without de-embedding. In this paper we use fabricated AlGaN/GaN HEMT on SiC transistor of 0.8(cid:117) 100 μm2 as reference device. Open and short structures fabricated and measured on the same substrate are used in this extraction procedure. Magnitude and phase comparison are also explained.
关键词： Two step de-embedding,HEMT,SiC substrate,GaN,open and short
更新于2025-09-04 15:30:14
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Enhancement of electrons confinement in AlGaN/AlN/GaN heterostructure using BGaN buffer with a small B-content
摘要： Since the small lattice constant a of wurtzite BGaN alloy and the good insulating property of its epitaxial layer, the use of the BGaN with a small B-content (0.005~0.02) as a buffer has potential to be a back-barrier for GaN high-electron mobility transistors (HEMTs). This paper presents an improved BGaN back-barrier HEMT structure (AlGaN/AlN/GaN/BGaN buffer) that does not create parasitic electron channel. The energy-band profile and carrier distribution of the BGaN buffer structure are studied by one-dimensional self-consistent simulation. The results show that the BGaN buffer with a very small B-content can provide a sufficient back-barrier to enhance electrons confinement, the principle of which is similar to the formation of back-barrier of AlGaN buffer. When the channel increases to a certain thickness, the low-density two-dimensional hole gas (2DHG) can even be induced at the GaN/BGaN interface by increasing the B-content from 0 to 0.02. Once the 2DHG is formed, continued increase in B-content would result in higher density 2DHG, while the effect on the energy-band profile, electrons confinement, and two-dimensional electron gas (2DEG) density becomes less pronounced.
关键词： HEMT,Back barrier,2DEG,2DHG,AlGaN/GaN,BGaN
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - An Ultrafast Discrete Short-Circuit Protection Circuit for GaN HEMTs
摘要： Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) are being designed into power electronic systems due to the fast switching capability. The GaN-based converters obtain higher efficiency, smaller size, and lower cost from the system point of view. On the other hand, the fast-switching characteristic of GaN also introduces the challenge of the short-circuit protection (SCP) and over-current protection (OCP). The traditional SCP/OCP methods are either too slow or not practical to the GaN device. Therefore, an alternative SCP/OCP solution which is fast and easy to implement is much desired for GaN HEMT. In this paper, an ultrafast discrete circuit of SCP for GaN HEMTs is proposed. The protection method includes two stages. The first-stage is soft turn-off, and the second-stage is hard turn-off. The soft turn-off can reduce the gate voltage gradually and thus limit the voltage spike on the DC-link. The method has been verified by both SPICE simulation and hardware implementation. The implementation results show that the propagation delay time for first-stage and second-stage are 85 ns and 125 ns, respectively. As a result, the proposed circuit is able to protect GaN HEMTs for short-circuit scenario under different DC-link voltages.
关键词： discrete circuit,short-circuit protection,GaN HEMT,gallium nitride
更新于2025-09-04 15:30:14
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Industrial 0.15-μm AlGaN/GaN on SiC Technology for Applications up to Ka Band
摘要： This paper describes the main characteristics of the new GaN-on-SiC technology in development at UMS. This technology is based on a 0.15-μm gate-length and it is in the phase of industrial qualification for a target release by the end of the year. The results of two out of four demonstrators already successfully designed on the new technology are also reported: a 29.5-36 GHz 9W HPA and a 15.5-18.5 GHz 20W HPA.
关键词： Ku Band,AlGaN/GaN HEMT,Ka Band
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Thermal Characterization and Design for a High Density GaN-Based Power Stage
摘要： This paper proposes a methodology for extracting the thermal equivalent circuit of a high density GaN-based power stage, using a 48 V to 12 V GaN-based synchronous buck converter as the test platform. The test setup calculates the junction temperatures by measuring Rds,on for both FETs in the half bridge, while current sources produce power losses in each device and the output filter inductor. Independent control of the two gate voltages allows for either symmetric or asymmetric distribution of power loss between the two FETs, and comparison of these results are used to calculate the coupled and uncoupled thermal resistances between them. The thermal interaction with the filter inductor is similarly modeled. The baseline thermal design with a bare PCB and no heatsink was characterized, as well as a proposed thermal solution consisting of a heatsink, gap pad, gap filler, and a plastic shim. Each configuration was tested with three air flow conditions, and the resulting thermal model was used to estimate the maximum current capability without exceeding 100 °C on either FET. The proposed thermal solution improves the maximum current-handling capability by over 60% compared with the baseline design.
关键词： thermal characterization,eGaN FET,thermal design,HEMT,HFET,heatsink,junction temperature,GaN
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Loss Characterization and Analysis of High Voltage E-mode GaN HEMT in Soft-switching Application
摘要： Application of wide band gap (WBG) devices are getting a sharp rise in the recent power electronics sector, due to their superior performance when compared to silicon. Even though GaN devices provide a promising ef?ciency and power density numbers, but high frequency operation limits these bene?ts. This leaves behind a space for the realization of high frequency based soft switching topologies, which in combination with the GaN makes the converter size smaller and simultaneously ef?cient. In this unique combination, an accurate design and analysis to estimate the overall losses of the converter is necessary. Typical converter design process starts with the detailed loss estimation analysis, wherein the semiconductor based losses shares the major portion. Traditional analytical way of estimating the soft-switching semiconductor loss is not precise as it mainly depends on the instantaneous circuit conditions. In case of the soft-switching topology, the instantaneous switch voltage and current needs to be monitored to determine the switching loss accurately. This will result in a more realistic semiconductor loss evaluation, which will further ease in improving converter design and analysis. Hence, in this paper the soft-switching condition loss characterization and analysis involving an enhanced-mode (E-mode) GaN implemented in a conventional topology is investigated and veri?ed.
关键词： E-mode,WBG,Hard-switching,HEMT,DPT,Soft-switching,GaN
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - High Voltage GaN Switch Reliability FIT rates and PPM reliability based on standards from: Joint Electron Device Engineering Council (JEDEC), Automotive Electronics Council (AEC) and German Electrical and Electronic Manufacturers' Association (ZVEI)
摘要： Adoption of any semiconductor technology by the power conversion market requires the understanding of fundamental failure modes, acceleration factors and reliability statistics. This study shows how GaN products from Transphorm can meet this challenge, especially in the critical High Voltage Off State (HVOS) reliability stress test. The anticipated failure rate during a product’s first 10 to 20 years of use is of particular interest as it has direct impact on warranty costs. This market requirement can be addressed by testing to failure statistically significant samples of devices, and analyzing the data with appropriate models. The methods developed for measuring GaN reliability on large samples will be discussed, which are wholly based on existing industrial and automotive standards. The resulting data can be used to supplement qualification testing results when the failure modes and acceleration factors are well understood.
关键词： GaN,FIT,PPM,HEMT,acceleration factor,power electronics,reliability
更新于2025-09-04 15:30:14