摘要： Adoption of any semiconductor technology by the power conversion market requires the understanding of fundamental failure modes, acceleration factors and reliability statistics. This study shows how GaN products from Transphorm can meet this challenge, especially in the critical High Voltage Off State (HVOS) reliability stress test. The anticipated failure rate during a product’s first 10 to 20 years of use is of particular interest as it has direct impact on warranty costs. This market requirement can be addressed by testing to failure statistically significant samples of devices, and analyzing the data with appropriate models. The methods developed for measuring GaN reliability on large samples will be discussed, which are wholly based on existing industrial and automotive standards. The resulting data can be used to supplement qualification testing results when the failure modes and acceleration factors are well understood.