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Highly Efficient Photo-Induced Charge Separation enabled by Metal-Chalcogenide Interfaces in Quantum-Dot/Metal-Oxide Hybrid Phototransistors
摘要： Quantum dot (QD)-based optoelectronics have received a large amount of interest for the versatile applications due to their excellent photosensitivity, facile solution processability, and the wide range of band gap tunability. In addition, the QD-based hybrid devices which are combined with various high-mobility semiconductors have been actively researched to enhance the optoelectronic characteristics as well as maximize the zero-dimensional structural advantages, such as tunable band gap and high light absorption. However, the difficulty of highly efficient charge transfer between QDs and the semiconductors, and the lack of systematic analysis for the interfaces have impeded the fidelity of this platform, resulting in complex device architectures and unsatisfactory device performance. Here, we report ultra-high detective phototransistors with highly efficient photo-induced charge separation using Sn2S6 4--capped CdSe QD/amorphous oxide semiconductor (AOS) hybrid structure. The photo-induced electron transfer characteristics at the interface of the two materials were comprehensively investigated with an array of electrochemical and spectroscopic analysis. In particular, the photocurrent imaging microscopy revealed that interface engineering in QD-AOS with chelating chalcometallate ligands cause efficient charge transfer, resulting in photovoltaic-dominated responses over whole channel area. On the other hands, monodentate ligands incorporated QD-AOS based devices typically exhibit limited charge transfer with atomic vibration, showing photo-thermoelectric-dominated responses in the drain electrode area.
关键词： quantum dots,scanning photocurrent microscopy,phototransistor,chalcometallate ligands,amorphous IGZO,ligand exchange
更新于2025-09-23 15:19:57
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Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
摘要： Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.
关键词： field-effect transistor (FET),inverter,WSe2,InGaZnO (IGZO),heterojunction PN diode,AC rectifier
更新于2025-09-23 15:19:57
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High refresh rate and low power consumption AMOLED panel using top-gate n-oxide and p-LTPS TFTs
摘要： A pixel circuit and a gate driver on array for light-emitting display are presented. By simultaneously utilizing top-gate n-type oxide and p-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs), the circuits provide high refresh rate and low power consumption. An active-matrix LED (AMOLED) panel with proposed circuits is fabricated, and driving at various refresh rate ranging from 1 to 120 Hz could be achieved.
关键词： OLED,LTPO,gate driver,IGZO,pixel circuit,LTPS
更新于2025-09-23 15:19:57
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Controlling In‐Ga‐Zn‐O Thin‐Film Resistance by Vacuum Rapid Thermal Annealing and Application to Transparent Electrode
摘要： This study reveals that an amorphous indium gallium zinc oxide film shows a large resistance change under vacuum rapid thermal annealing, whereas a zinc tin oxide film shows little resistance change under the same treatment. Based on these findings, the applicability of amorphous indium gallium zinc oxide thin films to a transparent source/drain electrode in zinc tin oxide thin-film transistors is investigated. The optical transmittance of the amorphous indium gallium zinc oxide and amorphous zinc tin oxide films in the visible region is greater than 85%. Furthermore, a zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode exhibits superior operation characteristics than devices with indium tin oxide source/drain electrodes, such as a lower threshold swing (from 369.96 to 315.45 mV dec?1), higher mobility (from 28.47 to 36.187 cm2 V?1 s?1), and higher on/off current ratio (from 1.25 × 107 to 3.56 × 107). In addition, in positive and negative bias temperature stress tests, the zinc tin oxide thin-film transistor with an amorphous indium gallium zinc oxide source/drain electrode shows almost equal stability compared to the zinc tin oxide thin-film transistor with an indium tin oxide source/drain electrode.
关键词： Zn-Sn-O (ZTO),In-Ga-Zn-O (IGZO) S/D electrode,thin-film transistors (TFT),vacuum rapid thermal annealing
更新于2025-09-23 15:19:57
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[IEEE 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) - Shenzhen, China (2018.11.16-2018.11.18)] 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) - Performance Improvement of Back-Channel-Etched a-IGZO TFTs by O<inf>2</inf> Plasma Treatment
摘要： This work investigates the effects of O2 plasma treatments on the performances of back-channel-etched (BCE) a-IGZO TFT. Results indicate that the O2 plasma treatment significantly improves the subthreshold swing (SS) and the performance stability under the negative gate bias stress. It is suggested that the improvement be attributed to the reduction of indium (In) and the defect state at the back channel surface.
关键词： NBS,subthreshold swing,BCE a-IGZO TFT,O2 plasma
更新于2025-09-19 17:15:36
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[IEEE 2018 9th International Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) - Shenzhen, China (2018.11.16-2018.11.18)] 2018 9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT) - High mobility metal-oxide thin film transistors with IGZO/In<inf>2</inf>O<inf>3</inf> dual-channel structure
摘要： High-performance Self-aligned top-gate thin film transistors with dual-channel have been successfully fabricated on glass substrate. The dual-layer channel is composed of In2O3 and IGZO layers. The introduction of the In2O3 thin layer greatly improves the electrical characteristics of the self-aligned top-gate thin film transistors. In comparison, the dual-channel TFT shows higher filed-effect mobility (34.3cm2/Vs) than single-layer a-IGZO TFT (10.2cm2/Vs). Apart from that we obtain an on/off current ratio of 106, a steep subthreshold swing voltage of 0.44V/decade and a threshold voltage of -3.35V. This enhancement can be attributed to the In2O3 thin layer which offers a higher carrier concentration, thereby maximizing the charge accumulation, generating high carrier mobility and turning the threshold voltage negative.
关键词： Self-aligned top-gate TFT,IGZO,uniformity,high mobility,threshold voltage,In2O3
更新于2025-09-19 17:15:36
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P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs
摘要： In this paper, we fabricated self-aligned top-gate (SATG) amorphous thin-film transistors (TFTs). The conductive source/drain regions were formed by hydrogen incorporation during the deposition of SiOx or SiNx passivation layer using plasma-enhanced chemical vapor deposition (PECVD). The effect of passivation layer deposition condition on the electrical performance of self-aligned top-gate a-IGZO TFTs was investigated. It was shown that the source-drain parasitic resistance (Rsd) was effectively reduced during the deposition of SiNx passivation layer than SiOx. However, as the deposition temperature of SiNx passivation layer increased, hydrogen lateral diffusion into channel region resulted in the shrinkage of effective channel length and the deterioration of electrical performance of short-channel device.
关键词： thin-film transistors,hydrogen diffusion,self-aligned top-gate,a-IGZO
更新于2025-09-19 17:15:36
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1.2: <i>Invited Paper:</i> Dynamic threshold voltage compensation IGZO‐GOA circuit for AMOLED display
摘要： A dual-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) has been proposed and designed in this work. Based on this specific structure, a technologically advanced external Vth compensation system, where Vth can be controllable by an external DC signal source, has been developed for gate driver on array (GOA). Subsequently, the working mode of this circuit was introduced. Moreover, detailed simulation has been performed to study the appropriate process window. Finally, the proposed GOA circuit exhibited stable high-voltage output pulse, meanwhile, the lifetime showed an significant improvement with the utilization of the external Vth compensation system. It should be also mentioned that a wide pulse of 3.6ms has been obtained to sense Vth of driving TFTs in pixel circuits.
关键词： GOA,external compensation system,wide pulse,lifetime,a-IGZO
更新于2025-09-19 17:13:59
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P‐9.14: High transparent Active matrix Mini‐LED Full Color Display with IGZO TFT Backplane
摘要： In this paper, we presented a active matrix Mini LED full color display with high transmittance over 60%. A 8-inch display with RGB Mini-LED with IGZO TFT backplane was demonstrated, which is 46 PPI pixel resolution and 256 grayscales and the pixel pitch is less than 0.55mm. It is the first time to realized the full color display based on RGB Mini-LEDs and chip on glass with top gate structure IGZO TFT backplane. We believe that it is a good breakthrough and demonstration for developing large-size Micro LED backplane and displays.
关键词： High transparent,Full Color,IGZO Glass Backplane,Active Matrix,Transparent,Active matrix,Micro LED,RGB Mini-LED Chip
更新于2025-09-19 17:13:59
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Bulk-Accumulation Oxide-TFT Backplane Technology for Flexible and Rollable AMOLED Displays: Part II
摘要： In the second of a two-part series on a new backplane technology for flexible and rollable AMOLED displays, the author describes a system built on a bulk-accumulation (BA) amorphous indium-gallium-zinc-oxide (a-IGZO) TFT.
关键词： a-IGZO TFT,Rollable AMOLED Displays,Bulk-Accumulation Oxide-TFT,Flexible AMOLED Displays
更新于2025-09-19 17:13:59