研究目的
To develop a dynamic external compensation system to eliminate the influence of threshold voltage (Vth) to GOA lifetime and improve the lifetime of GOA circuits significantly.
研究成果
The proposed GOA circuit can function well in the programming stage. By adjusting the voltage of light shielding, GOA lifetime can be improved. Moreover, a pulse width of 3.6ms can be successfully obtained with the help of compensation system. This technology has great significance for the functional failure and external compensation.
研究不足
The GOA life time is only 65h without the compensation system. The leakage current in TFTs makes it challenging for depletion-mode GOA circuits to generate a 3.6ms-width pulse.
1：Experimental Design and Method Selection:
A dual-gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) was proposed and designed. An external Vth compensation system was developed for gate driver on array (GOA).
2：Sample Selection and Data Sources:
GOA test keys were utilized to study the relationship between GOA lifetime and the external VLS voltage. Overall 42 GOA stairs were used in this experiment.
3：List of Experimental Equipment and Materials:
Keithley-4200 was performed to study the TFT characterization. Oscilloscope and jig were utilized to characterize the 40th output signal of GOA circuits.
4：Experimental Procedures and Operational Workflow:
The operation of the proposed unit was divided into five periods (S1 to S5 stages) to describe the experimental process.
5：Data Analysis Methods:
The dependence of voltage between GOA output voltage and stress time was studied. The effect of light shield voltage (VLS) on Vth was analyzed.
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