- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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[IEEE 2019 2nd International Conference on High Voltage Engineering and Power Systems (ICHVEPS) - Denpasar, Bali, Indonesia (2019.10.1-2019.10.4)] 2019 2nd International Conference on High Voltage Engineering and Power Systems (ICHVEPS) - IoT Application for On-line Monitoring of 1 kWp Photovoltaic System Based on NodeMCU ESP8266 and Android Application
摘要： The ?rst quanta image sensor jot with photon counting capability is demonstrated. The low-voltage device demonstrates less than 0.3e- r.m.s. read noise on a single read out without the use of avalanche gain and single-electron signal quantization is observed. A new method for determining read noise and conversion gain is also introduced.
关键词： low read noise,CMOS image sensor,high conversion gain,quanta image sensor,jot device,photon counting
更新于2025-09-19 17:13:59
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[IEEE 2019 21st International Conference on Transparent Optical Networks (ICTON) - Angers, France (2019.7.9-2019.7.13)] 2019 21st International Conference on Transparent Optical Networks (ICTON) - Dielectric and Plasmonic Vivaldi Antennas for On-Chip Wireless Communication
摘要： The ?rst quanta image sensor jot with photon counting capability is demonstrated. The low-voltage device demonstrates less than 0.3e- r.m.s. read noise on a single read out without the use of avalanche gain and single-electron signal quantization is observed. A new method for determining read noise and conversion gain is also introduced.
关键词： CMOS image sensor,high conversion gain,low read noise,photon counting,jot device,quanta image sensor
更新于2025-09-19 17:13:59
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Automotive 3.0 ?μm Pixel High Dynamic Range Sensor with LED Flicker Mitigation
摘要： We present and discuss parameters of a high dynamic range (HDR) image sensor with LED flicker mitigation (LFM) operating in automotive temperature range. The total SNR (SNR including dark fixed pattern noise), of the sensor is degraded by floating diffusion (FD) dark current (DC) and dark signal non-uniformity (DSNU). We present results of FD DC and DSNU reduction, to provide required SNR versus signal level at temperatures up to 120°C. Additionally we discuss temperature dependencies of quantum efficiency (QE), sensitivity, color effects, and other pixel parameters for backside illuminated image sensors. Comparing +120°C junction vs. room temperature, in visual range we measured a few relative percent increase, while in 940 nm band range we measured 1.46x increase in sensitivity. Measured change of sensitivity for visual bands—such as blue, green, and red colors—reflected some impact to captured image color accuracy that created slight image color tint at high temperature. The tint is, however, hard to detect visually and may be removed by auto white balancing and temperature adjusted color correction matrixes.
关键词： temperature dependence,sensitivity,LED flicker mitigation,quantum efficiency,automotive,CMOS,high dynamic range,image sensor
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 1st International Conference on Energy, Systems and Information Processing (ICESIP) - Chennai, India (2019.7.4-2019.7.6)] 2019 IEEE 1st International Conference on Energy, Systems and Information Processing (ICESIP) - Improved ANN Model for Predicting the AC Energy Output of a Realistic Photovoltaic Grid Connected PV System
摘要： A sub-0.5 electron read noise VGA (640H×480V) CMOS image sensor has been integrated in a standard 0.18 μm 4PM CMOS process. The low noise performance is achieved exclusively through circuit optimization without any process refinements. The presented imager relies on a 4T pixel of 6.5 μm pitch with a properly sized and biased thin oxide PMOS source follower. A full characterization of the proposed image sensor, at room temperature, is presented. With a pixel bias of 1.5 μA the sensor chip features an input-referred noise histogram from 0.25 e? rms peaking at 0.48 e? rms. The imager features a full well capacity of 6400 e? and its frame rate can go up to 80 fps. It also features a fixed pattern noise as low as 0.77%, a lag of 0.1% and a dark current of 5.6 e?/s. It is also shown that the implementation of the in-pixel n-well does not impact the quantum efficiency of the pinned photo-diode.
关键词： image sensor,thick oxide,thin oxide,CIS,thermal noise,1/f noise,low noise,sub-electron,low light,CMOS
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET) - Tangerang, Indonesia (2019.10.23-2019.10.24)] 2019 International Conference on Radar, Antenna, Microwave, Electronics, and Telecommunications (ICRAMET) - Contact-free Crater Depth Monitoring Using Measured Acoustic Shock Waves for Smart Laser Surgery Applications: Preliminary Result
摘要： A 47-million-pixel (47Mp) interline charge-coupled-device (CCD) image sensor, the world’s highest resolution interline-transfer CCD, has been developed for industrial, machine vision, and aerial photography applications. The sensor features a 5.5-μm pixel, 16-output low-noise amplifier and a low-smear, fast-dump gate, horizontal lateral overflow drain, and ON-chip temperature sensor. One challenge to manufacture this large sensor is stitching the sensor with different lithography tools, while still achieving equal or better image performance than its predecessor.
关键词： image sensor,multiple outputs,interline transfer (IT),lithography stitching,Charge-coupled-device (CCD)
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS) - Dallas, TX, USA (2019.8.4-2019.8.7)] 2019 IEEE 62nd International Midwest Symposium on Circuits and Systems (MWSCAS) - A CMOS 256-Pixel Self-Photovoltaics-Powered Subretinal Prosthetic Chip with Wide Image Dynamic Range and Shared Electrodes and Its In Vitro Experimental Results on Rd1 Mice
摘要： A self-photovoltaics-powered CMOS 256-pixel implantable chip with wide image dynamic range and shared electrodes is proposed and fabricated for subretinal prostheses. The infra-red (IR) light is incident only on photovoltaic cells of the chip whereas the visible light is mainly incident on pixels. The proposed adaptive background cancellation circuit (ABCC) is adopted to increase the image dynamic range so that the subretinal chip can adapt for different surrounding illuminances. Moreover, the bi-directional sharing electrodes (BDSEs) is used to increase electrode size under the same chip area and boost the stimulation charges to 11.4 nC. The functions of the chip have been successfully validated with both electrical measurement and in vitro patch clamp experiments with the retinas of Rd1 mice.
关键词： subretinal prostheses,CMOS image sensor,implantable chip
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Processing of image in optical and X-ray radiartion range by the sensor based on nonideal heterojunction
摘要： It is known that the sensor element based on the non-ideal CdS-Cu2S heterostructure is sensitive to optical and X-ray radiation. Such a sensor can accumulate and store optical and X-ray images. The sensor has a linear dependence of the signal on the dose of incident x-ray radiation. A novel technique has been developed to eliminate the influence of the surface inhomogeneity of the sensor sensitivity on the quality of the resulting image. This technique is based on the processing of the resulting image, taking into account additional information about the sensitivity of the sensor to optical and X-ray radiation at each surface point.
关键词： nonideal heterojunction,image sensor,X-ray radiation
更新于2025-09-19 17:13:59
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Continuous Live-Cell Culture Monitoring by Compact Lensless LED Microscopes
摘要： A compact lensless microscope comprising a custom-made LED engine and a CMOS imaging sensor has been developed for live-cell culture imaging inside a cell incubator environment. The imaging technique is based on digital inline-holographic microscopy, while the image reconstruction is carried out by angular spectrum approach with a custom written software. The system was tested with various biological samples including immortalized mouse astrocyte cells inside a petri dish. Besides the imaging possibility, the capability of automated cell counting and tracking could be demonstrated. By using image sensors capable of video frame rate, time series of cell movement can be captured.
关键词： lensless holographic microscopy,cell imaging,LED,CMOS image sensor,cell culture,cell counting
更新于2025-09-16 10:30:52
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A Time-of-Flight Range Sensor Using Four-Tap Lock-In Pixels with High near Infrared Sensitivity for LiDAR Applications
摘要： In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 μm silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed for long-range laser imaging detection and ranging (LiDAR) application. A 200 μm-thick bulk silicon in the SOI substrate is fully depleted by applying high negative voltage at the backside for higher quantum efficiency (QE) in a near-infrared (NIR) region. The proposed SOI-based four-tap charge modulator achieves a high-speed charge modulation and high modulation contrast of 71% in a NIR region. In addition, in-pixel drain function is used for short-pulse TOF measurements. A distance measurement up to 27 m is carried out with +1.8~?3.0% linearity error and range resolution of 4.5 cm in outdoor conditions. The measured QE of 55% is attained at 940 nm which is suitable for outdoor use due to the reduced spectral components of solar radiation.
关键词： CMOS image sensor,time-of-flight,backside-illumination,SOI detector,lock-in pixel
更新于2025-09-16 10:30:52
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Ultrathin Polymer Nanofibrils for Solar-Blind Deep Ultraviolet Light Photodetectors Application
摘要： Solar-blind deep ultraviolet photodetectors (DUVPDs) based on conventional inorganic ultrawide bandgap semiconductors (UWBS) have shown promising application in various civil and military fields and yet they can hardly be used in wearable optoelectronic devices and systems for lack of mechanical flexibility. In this study, we report a non-UWBS solar-blind DUVPD by designing ultrathin polymer nanofibrils with a virtual ultrawide bandgap, which was obtained by grafting P3HT with PHA via a polymerization process. Optoelectronic analysis reveals that the P3HT-b-PHA nanofibrils are sensitive to DUV light with a wavelength of 254 nm but are virtually blind to both 365 nm and other visible light illuminations. The responsivity is 120 A/W with an external quantum efficiency of up to 49700%, implying a large photoconductive gain in the photoresponse process. The observed solar-blind DUV photoresponse is associated with the resonant mode due to the leakage mode of the ultrathin polymer nanofibrils. Moreover, a flexible image sensor composed of 10 × 10 pixels can also be fabricated to illustrate their capability for image sensing application. These results signify that the present ultrathin P3HT-b-PHA nanofibrils are promising building blocks for assembly of low-cost, flexible, and high-performance solar-blind DUVPDs.
关键词： image sensor,leakage mode,Optoelectronic device,polymer nanostructures,virtual ultrawide bandgap semiconductor
更新于2025-09-11 14:15:04