- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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A New Analytical Charge Transfer Model for Time-of-Flight Image Sensors
摘要： A powerful tool for analyzing the performances of an image sensor designed for time-of-flight measurement purposes, the impulse response measurement (IRM), is presented. A way to measure the charges diffusion time (time for the photogenerated charges to be collected by the photodiode) using the analysis of an IRM is given. An unexpected phenomenon that occurs when performing a specific IRM is then showcased: performing two successive transfers, a short duration one followed by a long duration one is actually less efficient than performing a single transfer of long duration (same duration as the second transfer in the first case). Accordingly, a mathematical sufficient condition on the charge transfer efficiency function (CTEF) is enounced. A physical modeling based on thermionic emission theory and the influence of the potential barrier’s width on its effective height is presented. The model leads to a new CTEF expression that fulfills the mathematical requirement. Finally, a numerical simulation with the new CTEF fitting the experimental IRM data is performed.
关键词： time-of-flight (TOF),thermionic emission theory,Dirac-light pulse (DLP),diffusion time,impulse response measurement (IRM),Charge transfer efficiency function (CTEF),CMOS image sensor (CIS),light image detection and ranging (LIDAR),sense node (SN)
更新于2025-09-10 09:29:36
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From EBIC images to qualitative minority carrier diffusion length maps
摘要： A novel method is presented with the aim to perform minority carrier di?usion length map on cross-sectional samples. The method is based on one Electron-Beam Induced Current (EBIC) acquisition and on the analyze of the EBIC signal slope variation on each scanned points. This method is applied on a pinned photodiode array realized on a low doped silicon epitaxy, and the electron di?usion length map which is extracted is in good accordance with our expectation taking into account the doping distribution of the device. A TCAD simulation also con?rms quantitatively the measured di?usion length map. Advantages and drawbacks of this method are discussed in this study.
关键词： CMOS image sensors,CMOS,Scanning electron microscopy (SEM),Simulation,Electron-beam-induced current (EBIC),Deep submicron process,Solid-state image sensor,Semiconductor material measurements
更新于2025-09-10 09:29:36
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Column-Parallel ADCs for CMOS Image Sensors and Their FoM-Based Evaluations
摘要： This paper reviews architectures and topologies for column-parallel analog-to-digital converters (ADCs) used for CMOS image sensors (CISs) and discusses the performance of CISs using column-parallel ADCs based on figures-of-merit (FoM) with considering noise models which behave differently at low/middle and high pixel-rate regions. Various FoM considering different performance factors are defined. The defined FoM are applied to surveyed data on reported CISs using column-parallel ADCs which are categorized into 4 types; single slope, SAR, cyclic and delta-sigma ADCs. The FoM defined by (noise)2(power)/(pixel-rate) separately for low/middle and high pixel-rate regions well explains the frontline of the CIS’ performance in all the pixel rates. Using the FoM defined by (noise)2(power)/(intrascene dynamic range)(pixel-rate), the effectiveness of recently-reported techniques for extended-dynamic-range CISs is clarified.
关键词： column-parallel ADC,single-slope ADC,cyclic ADC,SAR ADC,delta-sigma modulation,figure of merit,CMOS image sensor
更新于2025-09-10 09:29:36
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13.1: <i>Invited Paper:</i> Single-Photon-Capable Detector Arrays in CMOS-Exploring a New Tool for Display Metrology
摘要： The technology of CMOS-compatible Single Photon Avalanche Diodes is evolving rapidly and has matured to the point at which imaging it can address applications. In this report we consider the current suitability and future potential of CMOS-compatible Single Photon Avalanche Diodes to address the particular application of display metrology.
关键词： Display Metrology,dSiPM,Quanta Image Sensor,CMOS,QIS,Complementary Metal Oxide Semiconductor,Digital Silicon Photo-Multiplier,Single Photon Avalanche Diode,SPAD
更新于2025-09-10 09:29:36
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Adaptive Thresholding Scheme for Demodulation of Rolling-Shutter Images Obtained in CMOS Image Sensor Based Visible Light Communications
摘要： Light-emitting-diode transmitter and complementary-metal–oxide–semiconductor (CMOS) image sensor receiver based visible light communication is a promising scheme for an optical wireless communication. During the demodulation of the rolling shutter pattern obtained from the CMOS image sensor Rx, due to the high signal fluctuation introduced by the uneven light exposure, special thresholding schemes are needed to correctly identify the data logic. In this work, we propose and demonstrate a modified adaptive scheme (MQA) for the demodulation of the rolling shutter pattern. Experimental bit-error-ratio (BER) measurements using different thresholding schemes at different illuminance are analyzed. The results show that the proposed MQA scheme can provide much lower BER, with similar process latencies when compared with other schemes.
关键词： visible light communication (VLC),Light emitting diode (LED),CMOS image sensor.
更新于2025-09-10 09:29:36
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[Papers] Quantum Efficiency Simulation and Electrical Cross-talk Index Development with Monte-Carlo Simulation Based on Boltzmann Transport Equation
摘要： This paper explains a new method to model a photodiode for accurate quantum efficiency simulation. Individual photo-generated particles are modeled by Boltzmann transport equation, and simulated by Monte-Carlo method. Good accuracy is confirmed in terms of similarities of quantum efficiency curves, as well as color correction matrices and SNR10s. Three attributes - "initial energy of the electron", "recombination of electrons at the silicon surface" and "impurity scattering" - are tested to examine their effectiveness in the new model. The theoretical difference to the conventional method with drift-diffusion equation is discussed as well. Using the simulation result, the relationship among the cross-talk, potential barrier, and distance from the boundary has been studied to develop a guideline for cross-talk suppression. It is found that a product of the normal distance from the pixel boundary and the electric field perpendicular to the Z-axis needs to be more than 0.02V to suppress the probability of electron leakage to the adjacent pixel to less than 10%.
关键词： cross-talk,quantum efficiency,simulation,image sensor,BTE,Boltzmann transport equation
更新于2025-09-09 09:28:46
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High-Performance 2D MoS <sub/>2</sub> Phototransistor for Photo Logic Gate and Image Sensor
摘要： Two-dimensional (2D) MoS2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS2 phototransistor that exhibits a photoresponse in the 400?700 nm range with the maximum responsivity of over 1 × 104 A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.
关键词： two-dimensional van der Waals materials,MoS2,image sensor,phototransistor,graphene contact,photoinverter
更新于2025-09-09 09:28:46
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Dose and Single Event Effects on a Color CMOS Camera for Space Exploration
摘要： This paper focuses on the radiation-induced dose and single event effects on a color CMOS camera designed for space missions. Gamma-ray and protons are used to evaluate the tolerance against cumulative dose effects. The dark current of the image sensor is the main parameter impacted by dose effects. Heavy ions testing is performed to evaluate single event effects. SEU, SEFI and SEL have been observed and mitigation techniques were proposed for specific space missions.
关键词： Total Ionizing Dose (TID),Microlens,CMOS Image Sensor (CIS),Single Event Effects (SEE),Displacement Damage Dose (DDD),Pinned Photodiode (PPD),Active Pixel Sensor (APS),Monolithic Active Pixel Sensor (MAPS),Camera,Color filter,Random Telegraph Signal (RTS)
更新于2025-09-04 15:30:14
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[IEEE ICASSP 2018 - 2018 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP) - Calgary, AB (2018.4.15-2018.4.20)] 2018 IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP) - Image Reconstruction for Quanta Image Sensors Using Deep Neural Networks
摘要： Quanta Image Sensor (QIS) is a single-photon image sensor that oversamples the light field to generate binary measurements. Its single-photon sensitivity makes it an ideal candidate for the next generation image sensor after CMOS. However, image reconstruction of the sensor remains a challenging issue. Existing image reconstruction algorithms are largely based on optimization. In this paper, we present the first deep neural network approach for QIS image reconstruction. Our deep neural network takes the binary bitstream of QIS as input, learns the nonlinear transformation and denoising simultaneously. Experimental results show that the proposed network produces significantly better reconstruction results compared to existing methods.
关键词： single-photon imaging,Quanta Image Sensor,deep neural networks,image reconstruction
更新于2025-09-04 15:30:14
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Optimization of CMOS Image Sensor Utilizing Variable Temporal Multi-Sampling Partial Transfer Technique to Achieve Full-frame High Dynamic Range with Superior Low Light and Stop Motion Capability
摘要： Differential Binary Pixel Technology is a threshold-based timing, readout and image reconstruction method that utilizes sub-frame partial charge transfer technique in a standard four-transistor (4T) pixel CMOS Image sensor (CIS) to achieve HDR video with Stop Motion. This technology improves low light signal-to-noise ratio (SNR) by up to 21dB. The method is verified in silicon using a TSMC 65nm 1.1μm pixel technology 1 megapixel (MP) test chip array and is compared with a traditional 4× oversampling technique using full charge transfer. The test chip is also compared with the iPhone 6s rear view camera to show superior HDR video capability.
关键词： HDR video,iPhone 6s,Differential Binary Pixel Technology,SNR,CMOS Image sensor,Stop Motion,TSMC 65nm
更新于2025-09-04 15:30:14