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Subsurface modification induced on ion-exchanged glass substrates by deposition and bombardment
摘要： Ion-exchanged glasses are widely used in optoelectronic devices due to its high strength and optical waveguide effects. The MgF2 films deposited on the ion-exchanged glasses and the ion-exchanged glasses bombarded by argon ions (100 eV) at 220 °C were investigated in the present work. The microstructure of MgF2 films and the structural and physico-chemical properties of the ion-exchanged glasses before and after deposition and bombardment were analyzed by grazing incident X-ray diffraction (GIXRD), field emission scanning electron microscopy (FE-SEM), electron probe micro analysis (EPMA), micro-Raman spectroscopy and surface stress meter. It is shown that MgF2 films exhibit a polycrystalline and microcolumnar structure. The peak of potassium ions concentration distribution in the ion-exchanged glasses, accompanied by outward diffusion of potassium ions, decreases and moves from glass surface to the inner part to different degrees during deposition and bombardment. The potassium ions concentration in the region near the surface of argon ion-bombarded glasses is almost the same as the MgF2-coated glasses. Furthermore, the position and intensity of Raman bands in the subsurface region of the ion-exchanged glasses show obvious changes before and after deposition and bombardment. The values of compressive stress and depth of layer in the MgF2-coated ion-exchanged glasses and the argon ion-bombarded ion-exchanged glasses are far away lower than that of its values obtained in the ion-exchanged glasses. Overall results have shown that variations of chemical composition, Raman bands and surface compressive stress in the exchanged region indicate subsurface modification of the ion-exchanged glasses induced by deposition and bombardment, which provide useful information for the use of the ion-exchanged glasses in further.
关键词： Modification,Ion bombardment,Raman spectroscopy,Ion-exchanged glass,MgF2 thin film
更新于2025-09-23 15:22:29
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Energetic Ions during Plasma-Enhanced Atomic Layer Deposition and their Role in Tailoring Material Properties
摘要： Plasma-enhanced atomic layer deposition (PEALD) has obtained a prominent position in the synthesis of nanoscale films with precise growth control. Apart from the well-established contribution of highly reactive neutral radicals towards film growth in PEALD, the ions generated during plasma exposure can also play a significant role. In this work, we report on the measurements of ion energy and flux characteristics on grounded and biased substrates during plasma exposure to typically used for PEALD (O2, H2, N2) were measured in a commercial 200-mm remote inductively coupled plasma ALD system equipped with RF substrate biasing. IFEDFs were obtained using a gridded retarding field energy analyzer and the effect of varying ICP power, pressure and bias conditions on the ion energy and flux characteristics of the three reactive plasmas were investigated. The properties of three material examples – TiOx, HfNx and SiNx – deposited using these plasmas were investigated on the basis of the energy and flux parameters derived from IFEDFs. Material properties were analyzed in terms of the total ion energy dose delivered to a growing film in every ALD cycle, which is a product of the mean ion energy, total ion flux and plasma exposure time. The properties responded differently to the ion energy dose depending on whether it was controlled with RF substrate biasing where ion energy was enhanced, or without any biasing where plasma exposure time was increased. This indicated that material properties were influenced by whether or not ion energies exceeded energy barriers related to physical atom displacement or activation of ion-induced chemical reactions during PEALD. Furthermore, once ion energies were enhanced beyond these threshold barriers with RF substrate biasing, material properties became a function of both the enhanced ion energy and the duration for which the ion energy was enhanced during plasma exposure. These results have led to a better insight into the relation between energetic ions and the ensuing material properties, e.g., by providing energy maps of material properties in terms of the ion energy dose during PEALD. It serves to demonstrate how the measurement and control of ion energy and flux characteristics during PEALD can provide a platform for synthesizing nanoscale films with the desired material properties.
关键词： ion energy dose,ion energy flux,ion bombardment,atomic layer deposition,RFEA,thin film,substrate biasing,ion flux,ion energy control,retarding field energy analyzer,plasma ALD
更新于2025-09-23 15:21:21
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Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
摘要： The effects of low-energy (<15 eV) high-flux O2+ ion bombardment (>1017 cm?2 cycle?1) during the plasma-enhanced atomic layer deposition (PE-ALD) were investigated. High-dose O2+ ion bombardment on the properties of Al2O3 films deposited on 3D nanostructures by PE-ALD caused interfacial mixing, and AlSiOx films with abrupt interfaces were formed on Si surfaces. Interfacially mixed AlSiOx films were selectively formed on single-crystal Si, amorphous Si, and degraded SiO2 surfaces, whereas normal ALD Al2O3 films were formed on thermally grown SiO2 surfaces. At the same time, the interfacially mixed AlSiOx films were selectively formed on the horizontal top and bottom faces of the 3D nanostructures, whereas normal ALD Al2O3 films were formed on the vertical sidewalls. The morphology and thickness of the film deposited on the amorphous Si surface were the same as those on the single-crystal Si surface. The interfacially mixed AlSiOx film possessed rough surface morphology and a layered structure of Al-/Si-/Al-rich AlSiOx layers. The low-energy high-flux O2+ ion bombardment condition required for the interfacial-mixing ALD was realized in a direct inductively coupled plasma (ICP) reactor with a self-resonant planar coil, in which high-density plasma was excited near the substrate. The O2+ ion flux was found to be controllable over a wide range through variation in the O2 pressure. The ratio of O2+ ion flux at 0.01 Torr to that at 1 Torr was 289. The steep decrease of the ion flux with increasing pressure was attributed to the decrease of electron density in the upstream plasma for intensifying electron energy loss and the decrease of the ambipolar diffusion coefficient in the downstream plasma. A comparison of electron densities near the substrate and those at the presheath edge calculated from measured positive ion fluxes using the Bohm criterion revealed that negative ions, which significantly affect the positive ion flux, scarcely exist near the substrate. The interfacial-mixing PE-ALD has the potential to realize area-selective and topographically selective depositions, which are key technologies for fabricating next-generation electronic devices with 3D nanostructures. The direct ICP reactor is suitable for realizing selective deposition using the interfacial-mixing ALD.
关键词： plasma-enhanced atomic layer deposition,selective deposition,inductively coupled plasma,interfacial mixing,ion bombardment
更新于2025-09-23 15:21:01
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Evaluation of ion bombardment in DC magnetron sputtering DC
摘要： Momentum of ion bombardment in sputtering deposition process, which strongly depends on internal stress of thin film, has been evaluated regarding to a new parameter Pi we previously proposed for fine-tuning of mechanical, optical, electrical and magnetic properties. In this study, we demonstrate to estimate the Pi defined as (i/a) p, where i the ion flux, a the atom flux and p the ion’s momentum, by means of Langmuir probe and multi-grid analyzer in a function of negative bias voltage applied on substrates Vsub. As a result, it was found that the Pi was roughly proportional to Vsub except on lower voltage than 30 V. This indicates that the Pi should be measured plasma-diagnostically under incident ion energy as low as plasma potential.
关键词： Sputter,Thin film,Ion bombardment,Intrinsic stress,Plasma
更新于2025-09-23 15:21:01
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European Microscopy Congress 2016: Proceedings || An in-situ Low Energy Argon Ion Source for Local Surface Modification
摘要： A new in-situ low energy ion source for surface modification of a sample surface has been designed. The source is based on the principle of low energy ion bombardment from a beam of ions such as Ar+, N+, or He+ can be used for a local modification of the sample surface. Typical energies are in the range 10 - 100 eV, covering the interaction types from chemical reaction to ion etching and to ion implantation. The source is based on the following principle: electrons from a filament are accelerated towards a grid by a potential difference between the filament and the grid. The electrons enter a gas-filled region between the grid and the sample, where they ionize the gas. The ions are then accelerated towards the sample by a potential difference between the grid and the sample. The source produces a static beam of ions with a selectable energy of 10-100 eV and a full width half maximum (FWHM) of 7.1 um. This corresponds to a central ion current density of 0.019 nA/um2 at 100 eV, which is very similar to the current density at 100 eV of a regular ICP source. In this way, the sample area that is affected by the low energy ions can be more or less defined by the applied bias voltage. The first application can be polishing the top surface of a TMD laminate produced by CVD, or improvement of and LPE surface prepared by ICP. An example of the interaction with the beam is shown in Figure 1, where a native oxide on Si has been removed in 25 seconds, using 100 eV Ar+ ions.
关键词： Ar+,surface modification,low energy ion source,chemical reaction,FWHM,native oxide removal,ion etching,ICP,current density,static beam,N+,ion bombardment,TMD,He+,LPE,ion implantation,in-situ,gas ionization,filament,grid,CVD
更新于2025-09-19 17:15:36
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Effect of anode surface treatment by oblique ion bombardment method on Organic light-emitting diodes performance
摘要： In this work, The influence of oblique ion bombardment treatment of the surface of indium tin oxide (ITO) thin films, on the surface parameters of the film and then the performance of organic light-emitting diodes (OLEDs) has been investigated. Both commercially available and uniquely fabricated ITO substrates which were deposited by electron beam evaporation method have been employed. The ITO surface characteristics have been investigated by atomic force microscopy (AFM), X ray diffraction (XRD) and UV-Vis-NIR spectrophotometer. Then a typical OLED device was fabricated on different ITO surfaces and characterized by Keitley 2450 and JAZ spectrometer. The results show that after anode surface treatment by means of oblique Argon ion bombardment method, surface roughness is extremely decreased, which resulted in increasing current and power efficiencies and also there was no evidence of ohmic junctions before driving voltage. The maximum ohmic resistance, current and power efficiencies were 371 MΩ, 6.4 cd/A and 0.91 cd/w, respectively. Also it is found that local non-emissive area or dark spots creation reduced for treated surface device. These findings provide a simple way to effectively reduce the roughness of the ITO films as anode to be applied in optoelectronic devices such as OLEDs.
关键词： Surface roughness,Organic light emitting diodes,Oblique ion bombardment,ITO,Surface treatment,Dark spot
更新于2025-09-19 17:13:59
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Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(In Ga1?)Se2 solar cells with a single-gradient band gap profile
摘要： Reducing the Cu(InxGa1?x)Se2 (CIGS) thickness is an effective way to reduce the material use and increase manufacturing throughput. However, it is still a challenge to obtain high efficiency in the ultrathin CIGS solar cell. Here, the CIGS solar cell with a 1.3 μm-thickness-CIGS was synthesized via a three-stage co-evaporation method. The obtained CIGS solar cells were characterized by capacitance-voltage, capacitance-frequency, secondary ion mass spectrometry, X-ray fluorescence, transmission electron microscope, and electron beam induced current techniques. By optimizing the grain size, interface quality, and the Ga gradient in the ultrathin CIGS solar cell, the highest efficiency reached to 11.72% without any light trapping and anti-reflecting coating techniques. Compared with the typical CIGS solar cell with a thickness of 2.3 μm, the ultrathin CIGS solar cell showed a higher open-circuit voltage due to formation a back electrical field. The grain boundaries were found to be beneficial to the carrier’s separation and transport. The ultrathin CIGS solar cell had good ability to resist ion bombardment, suggesting its potential application in the space devices. Our results provide a strategy to achieve high-efficiency ultrathin CIGS solar cells.
关键词： High interface quality,Cu(InxGa1?x)Se2 solar cells,Heavy ion bombardment,Ultrathin
更新于2025-09-11 14:15:04
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Films Deposited from Reactive Sputtering of Aluminum Acetylacetonate Under Low Energy Ion Bombardment
摘要： Films were deposited from aluminum acetylacetonate (Al(acac)3) using a methodology involving reactive sputtering and low energy ion bombardment. The plasma was generated by the application of radiofrequency power to the powder containing electrode and simultaneously, negative pulses were supplied to the electrode where the substrates were attached. It was investigated the effect of the duty cycle of the pulses (Δ) on the properties of the coatings. Association of ion bombardment to the deposition process increased film thickness, structure reticulation and organic content. Ions from the deposition environment were implanted at the film-air interface or underneath it. Morphology and topography were altered depending on Δ. Considering the enhancement of Δ, it affected the flux of ions reaching the depositing interface and then the deposition rate, H content, crosslinking degree and surface microstructure. Alumina groups were detected in the infrared spectra, whereas the precipitation of amorphous alumina was confirmed by X-ray diffraction.
关键词： Aluminum acetylacetonate,Ion bombardment,Duty cycle
更新于2025-09-09 09:28:46
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8.2: <i>Invited Paper:</i> Research on the Effects of Different Doping Methods on Top-Gate IGZO TFT
摘要： By N2O/N2/O2 doped the active layer and He/Ar/Al/SiNx doped the S/D of Top-Gate IGZO TFT, we have summarized the effects of different doping modes on the properties of Top-Gate IGZO TFT, including doping the active layer of Top-Gate IGZO TFT with N2O can obviously improve the electrical uniformity of devices , and doping the S/D of Top-Gate IGZO TFT with aluminum(Al) can significantly improve the NBTIS/ PBTIS of devices, etc. By optimizing the doping method, we have fabricated a device with both good electrical uniformity and good electrical properties, with threshold voltage shift (ΔVth ) of 18 points less than 1V, Mobility=8.6 cm2/V.S,Subthreshold Swing(SS) =0.26 V/dec ,Threshold Voltage（Vth）=2.9V ,ΔVth=1.54 V (NBTIS, Bias=-30V,T=80 ℃ ,Backlight=4500Nit,2000S,W/L=6/12),ΔVth= 5.28V(PBTIS,Bias=+30V，T=80℃, Backlight=4500Nit, 2000S， W/L=6/12) .
关键词： Active layer,Ion Bombardment,Top-Gate IGZO TFT,S/D,H* Diffusion,Defect state,Doping,Oxygen Concentration,Al Seize oxygen
更新于2025-09-09 09:28:46
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ion bombardment effect on the band gap of anatase TiO2 ultrathin films
摘要： We report a study of the effect of nitrogen ion bombardment on the optical properties of anatase TiO2 ultrathin films, particularly the band gap energy. The TiO2 films were prepared by a sol-gel method and dip-coating process. The as-prepared TiO2 films were then exposed to a +N2 low-energy ion beam from a microwave electron cyclotron resonance (ESR) ion source. Raman and spectroscopic ellipsometry (SE) analysis were performed on TiO2 films prepared at different +N2 exposure times. The Raman measurements reveal the conservation of the anatase TiO2 crystalline structure after the ion beam exposure. From a detailed ellipsometric study, the thickness of layers, the dielectric function, the band gap and the Urbach energies were determined. The obtained results show an increase of the TiO2 band gap with the decrease of thickness of films during +N2 exposure time. The band gap energy was blue shifted from 20 meV to 140 meV as the exposure time was increased from 5 min to 20 min when the thickness was decreased from 30 nm to 21 nm. This increasing of band gap energy could be explained by the thickness effect. From the band tail, the Urbach energy was also affected by +N2 ion beam. These results are in good agreement with the observed broadending of the Raman band the OeTieO bending vibration mode, as the exposure time increases.
关键词： +N2 ion bombardment,TiO2,Urbach energy,Band gap energy,Raman,Ellipsometry
更新于2025-09-09 09:28:46