摘要： A new in-situ low energy ion source for surface modification of a sample surface has been designed. The source is based on the principle of low energy ion bombardment from a beam of ions such as Ar+, N+, or He+ can be used for a local modification of the sample surface. Typical energies are in the range 10 - 100 eV, covering the interaction types from chemical reaction to ion etching and to ion implantation. The source is based on the following principle: electrons from a filament are accelerated towards a grid by a potential difference between the filament and the grid. The electrons enter a gas-filled region between the grid and the sample, where they ionize the gas. The ions are then accelerated towards the sample by a potential difference between the grid and the sample. The source produces a static beam of ions with a selectable energy of 10-100 eV and a full width half maximum (FWHM) of 7.1 um. This corresponds to a central ion current density of 0.019 nA/um2 at 100 eV, which is very similar to the current density at 100 eV of a regular ICP source. In this way, the sample area that is affected by the low energy ions can be more or less defined by the applied bias voltage. The first application can be polishing the top surface of a TMD laminate produced by CVD, or improvement of and LPE surface prepared by ICP. An example of the interaction with the beam is shown in Figure 1, where a native oxide on Si has been removed in 25 seconds, using 100 eV Ar+ ions.