- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Deposition and Determination of Band Alignment of Al2O3/Si Gate Stacks by New CVD Chemistry
摘要： Compared to other precursors, dimethyl aluminum hydride [(CH3)2AlH] has high vapor pressure of 2 torr at room temperature and a potential to form alumina films by CVD/ALD with low carbon impurity. Additionally, low deposition temperature of dimethyl aluminum hydride will avoid the formation of low-k interfacial layer during deposition, which is suitable for the MOS device fabrication. In this study, Al2O3 thin films have been deposited successfully from dimethyl aluminum hydride and O2 to investigate the MOCVD behaviour as well as the observation of the band alignment of deposited Al2O3/Si gate stacks.
关键词： Precursor,High-k gate dielectrics,Band alignment,Thermal stability
更新于2025-09-04 15:30:14
-
Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN
摘要： We have developed high-throughput depth-resolved electronic structure measurements using hard X-ray photoelectron spectroscopy (HAXPES) combined with X-ray total reflection (TR). By utilizing a steep change of the X-ray attenuation length around the TR condition, we controlled the effective inelastic mean-free-path of photoelectrons from >2 to >12 nm in HAXPES. We applied this method to probe the surface band bending of n-type polar GaN and found the different band bending behaviors in the Ga- and N-polar surfaces. This result is related to the surface contaminations and crystal quality near the surfaces of polar GaN.
关键词： hard X-ray photoelectron spectroscopy,surface band bending,depth-resolved electronic structure,polar GaN,X-ray total reflection
更新于2025-09-04 15:30:14
-
Latency analysis on W-band hybrid fiber-wireless link using software defined radio in real time
摘要： This paper reports an experimental comparison and analysis of latency for different modulation techniques at different data rates in W-band Radio-over-Fiber (RoF) transmission links. In addition, a software defined radio called GNU-Radio is employed with Universal Software Radio Peripherals (USRP) to generate and retrieve the transmitted signals. Likewise, it is used to test the end to end latency in the W-band RoF link. Our main contribution is achieving a W-Band low-latency wireless fiber link which fits to the key performance indicators of 5G networks.
关键词： Radio over Fiber,W band,Network Performance,Software defined radio
更新于2025-09-04 15:30:14
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - A 112 μW F-band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection
摘要： This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a transmission line is detected at 312 probe locations to provide an accurate representation. Standing wave measurements are performed for differential amplitude and phase variations, demonstrating the potential for magnitude and angle detection. The minimum required RF input power is ?25 dBm. The detector is implemented in a 40nm bulk CMOS technology operating from 96-to-140 GHz, while only consuming 112 μW of DC power with a 0.287 mm2 active occupied area.
关键词： standing wave,sensing,F-band,CMOS,impedance detection,receiver,mm-wave integrated circuits
更新于2025-09-04 15:30:14
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family
摘要： This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors’ 0.25 μm GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.
关键词： pseudomorphic high electron mobility transistor (pHEMT),X-Band,wideband amplifiers,high efficiency,Power Amplifier (PA),thermal analysis,EM simulation,monolithic microwave integrated circuit (MMIC)
更新于2025-09-04 15:30:14
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis
摘要： The rapid development of III-V technologies for telecommunication and radar markets need the meeting of performances (power, frequency) criteria as well as reliability assessment. Nitride HEMT technologies are known to reveal a large variety of failure electrical signatures, and it is also largely accepted that multi-tools (multi physics) approaches is the only suitable way to understand the failure mechanisms and to improve the technologies. Experimental stress workbenches usually allow to track a given number of static/dynamic parameters, but specific characterization are only performed at initial and final steps on the devices. This paper proposes a new approach with S-parameters measurement performed during RF stresses without removing the devices under test (in a thermally controlled oven). Then intermediate knowledge of the electrical (small signal) behavior of the devices can be assessed, and crossed with large-signal and static time-dependent signatures.
关键词： Microwave transistors,HEMTs,Gallium nitride,Life testing,C-band,Semiconductor device reliability
更新于2025-09-04 15:30:14
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - GaAs Balanced Amplifier for Ka-Band Space Communications System
摘要： The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.
关键词： Ka-band,GaAs technology,Balanced amplifier,Space technology,dynamic range
更新于2025-09-04 15:30:14
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Robust X-band GaN LNA with Integrated Active Limiter
摘要： In this paper, design and measurement of X-Band monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNA) using a commercial 0.25 um microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology are reported. Using a novel active limiting approach in measurements, lower than 1.75 dB noise figure (NF) and higher than 16 W CW input power survivability is obtained from a single chip. To the best of authors’ knowledge, said LNA has the highest input power handling performance for the given noise figure level although transistors are not optimized for low-noise operation and input matching network is realized to compromise between noise figure and input return loss which is better than 10 dB. Results are promising for single chip GaN frontend transceiver architecture realization.
关键词： X-Band,MMIC,active limiter,LNA,survivability,robustness,GaN
更新于2025-09-04 15:30:14
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - DC-170 GHz Characterization of 22nm FDSOI Technology for Radar Sensor Applications
摘要： The high frequency performance of fully wired 22nm FDSOI n- and p- MOSFETs was measured for the first time up to 170 GHz and 125 oC. Record MAG of 8 and 7 dB, respectively, is reported for n- and p-MOSFETs at 170 GHz, higher than for any other MOSFET technology, and comparable or higher than that of the best SiGe HBTs. Moreover, gm, MAG, fT, and fMAX improve monotonically as the gate length is reduced from 80 to 20 nm, and degrade by only 10-15% from 25 to 125 oC. Novel 4-terminal varactors and series-stacked n-MOSFET cascodes with back-gate control were also characterized to assess their application in VCOs, power amplifiers, single-transistor mixers and modulators. An output power of 14 dBm with 12% peak PAE and 24% drain efficiency were measured for 3- and 4-stack cascode test structures at 80 GHz, without any output matching network.
关键词： VCO,D-band,back gate,varactor,cascodes,de-embedding,FDSOI MOSFETs,MAG
更新于2025-09-04 15:30:14
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - High Linearity 57–66 GHz SiGe Receiver for Outdoor Point-to-Point Communication
摘要： Fully integrated receiver in a superhetrodyne architecture covering the entire 60 GHz frequency range (57-66 GHz) was designed and fabricated in 0.12 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, RF variable attenuator, IF variable gain amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and x3 frequency multiplier. The receiver chip achieve maximum gain of 65 dB, 5 dB minimum noise figure, better than 2 dBm IIP3 at high linearity mode, with >75 dB dynamic range, and consumes 630 mW.
关键词： V-Band,SiGe BiCMOS,receiver,mm-Wave integrated circuits,60 GHz
更新于2025-09-04 15:30:14