研究目的
To present an integrated standing wave detector for F-band sensing applications, capable of detecting standing waves at 312 probe locations for accurate representation of differential amplitude and phase variations.
研究成果
An F-band integrated standing wave detector was proposed and fabricated in a 40nm CMOS technology. It is able to detect a standing wave using 312 probes, operates from 96-to-140 GHz for input powers as low as ?25 dBm, while consuming only 112 μW of DC power. Both differential phase and differential amplitude measurements were shown for a packaged die.
研究不足
The design requires good calibration to characterize the system and calculations to obtain results, and the challenge of good quadrature generation at mm-wave frequencies.
1：Experimental Design and Method Selection:
The design is based on the principle of a slotted line, using a movable RF-probe to measure the power at several points on a transmission line.
2：Sample Selection and Data Sources:
The detector is implemented in a 40nm bulk CMOS technology.
3：List of Experimental Equipment and Materials:
The detector includes a Marchand balun, a differential transmission line with 312 rectifiers, and a low noise amplifier.
4：Experimental Procedures and Operational Workflow:
Standing wave measurements are performed for differential amplitude and phase variations.
5：Data Analysis Methods:
The phase and magnitude difference between the two incident waves are calculated from the measured standing wave.
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