研究目的
Investigating the design and verification of two wideband class AB High Power Amplifiers (PA) encapsulated in commercial packages, focusing on achieving high power output, wide-bandwidth, and high power added efficiency in the X-band frequency range.
研究成果
The paper presents two GaN PA MMIC designs that achieve saturated output power greater than 25 W with peak power added efficiency at 30% across wideband operation in the X-band. The designs demonstrate a balanced trade-off between bandwidth and efficiency, with comprehensive thermal management ensuring safe operation. Future work may address the identified discrepancy in the 7.5-8.0 GHz range.
研究不足
The discrepancy in performance for the frequency band 7.5-8.0 GHz is under investigation, indicating potential limitations in the design or measurement setup for specific frequency ranges.
1：Experimental Design and Method Selection:
The design utilizes WIN Semiconductors’ 0.25 μm GaN on SiC technology, focusing on wideband class AB High Power Amplifiers. The methodology includes load impedance selection, matching circuit design, and thermal management strategies.
2：25 μm GaN on SiC technology, focusing on wideband class AB High Power Amplifiers. The methodology includes load impedance selection, matching circuit design, and thermal management strategies.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: The study uses GaN transistors for the PA designs, with specific focus on their power handling and efficiency characteristics.
3：List of Experimental Equipment and Materials:
Includes WIN Semiconductors’ GaN on SiC technology, commercial packages for encapsulation, and active cooling systems for thermal management.
4：Experimental Procedures and Operational Workflow:
Detailed steps include load pull simulations for impedance selection, multistage power combining matching strategy, and thermal simulations to ensure safe operation temperatures.
5：Data Analysis Methods:
Performance metrics such as output power, power gain, and power added efficiency are analyzed through simulations and measurements.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
