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- 摘要
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- 实验方案
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Submicron fulla??color LED pixels for microdisplays and microa??LED main displays
摘要： We demonstrate a bottom-up approach to the construction of micro-LEDs as small as 150 nm in lateral dimension. Molecular beam epitaxy (MBE) is used to fabricate such nanostructured LEDs from InGaN, from the blue to red regions of the spectrum, providing a single material set useful for an entire RGB display.
关键词： nanowire,light-emitting diode,selective area growth,GaN,quantum dot,display
更新于2025-09-23 15:19:57
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High-Performance Color-Converted Full-Color Micro-LED Arrays
摘要： Color-converted micro-LED displays consisting of mono-blue-colored micro LED arrays and color-conversion materials have been used to achieve full color while reliving the transfer and epitaxial growth of three di?erent-colored micro LEDs. An e?cient technique is suggested to deposit the color-conversion layers on the blue micro LEDs by using a mixture of photo-curable acrylic and nano-organic color-conversion materials through the conventional lithography technique. This study attempts to provide a solution to fabricate full-color micro-LED displays.
关键词： full color,color-conversion,micro LED,GaN,light-emitting diode
更新于2025-09-23 15:19:57
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Diboron-Based Delayed Fluorescent Emitters with Orange-to-Red Emission and Superior Organic Light-Emitting Diode Efficiency
摘要： For the application of OLEDs in lighting and panels, the basic requirement is to include a full spectrum color range. Compared with the development of blue and green luminophores in thermally activated delayed fluorescence (TADF) technology, the progress of orange-to-red materials is slow and needs further investigation. In this study, three diboron compound-based materials, dPhADBA, dmAcDBA, and SpAcDBA, were designed and synthesized by nucleophilic arylation of three amine donors on 9,10-diboraanthracene (DBA) in a two-step reaction. With increasing electron-donating ability, they show orange-to-red emission with TADF characteristics. The electroluminescence (EL) of these diboron compounds exhibits emissions λmax at 613, 583, and 567 nm, for dPhADBA, dmAcDBA, and SpAcDBA, respectively. It is noteworthy that the rod-like D-A-D structures can achieve high horizontal ratios (84~86%) and outstanding device performance for orange-to-red TADF OLEDs: the highest external quantum efficiencies (ηEQE) for dPhADBA, dmAcDBA, and SpAcDBA are 11.1 ± 0.5%, 24.9 ± 0.5%, and 30.0 ± 0.8%, respectively. Therefore, these diboron-based molecules offer a promising avenue for the design of orange-to-red TADF emitters and the development of highly efficient orange-to-red OLEDs.
关键词： thermally activated delayed fluorescence,9,10-diboraanthracene,horizontal dipole ratio,diboron compound,orange-red color,organic light-emitting diode
更新于2025-09-23 15:19:57
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An effective strategy to boost 3D perovskite light-emitting diode performance via solvent mixing strategy
摘要： In this study, we demonstrate a simple method to achieve highly efficient perovskite light-emitting diode (PeLED) via casting the neat methylammonium bromide (MABr) in mixed solvents with different solubility on top of the perovskite layer for bulk recrystallization and interfacial passivation. The perovskite crystals reacting with MABr can be reformed orderly and stereoscopically with a reduced domain size on surface and reduced grain boundaries in bulk, which is advantageous to obtain strong fluorescence intensity and long exciton lifetime. The remaining MABr molecule that does not react with perovskite can attach on the recrystallized perovskite surface to develop a passivation layer, which can effectively eliminate exciton interface recombination in PeLEDs. The optimized PeLED exhibits a maximum luminance of 27692.2 cd m-2, which is more than 11 times and 2 times higher than the control device without MABr treatment and the control device with high MABr molar ratio and thin perovskite film thickness, respectively. This work provides an effective strategy to boost PeLED performance by optimizing mixed solvent ratios and concentrations of organic ligand MABr without changing the thickness of the emitting layer.
关键词： charge balance,morphological manipulation,passivation,perovskite light-emitting diode,recrystallization
更新于2025-09-23 15:19:57
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Enhanced efficiency of quantum dot light-emitting diode by sol-gel derived Zn1-xMgxO electron transport layer
摘要： In this study, sol-gel derived Zn1-xMgxO (ZMO) is proposed as an electron transport layer (ETL) for solution-processed quantum-dot light-emitting diodes (QLEDs). It is demonstrated that the increase of Mg content in Zn1-xMgxO films from 0% to 20% causes a dramatic suppression of electron current, which is attributed to the lifting of conduction band minimum and reduction of electron mobility. As a result of Mg-doping, the charge carrier balance might be achieved in the QLED with the Zn0.85Mg0.15O layer resulting in maximum external quantum efficiency of 5.74% and current efficiency of 18 cd·A-1, which are over 3-fold higher than in the case of the device with ZnO layer. Improved device performance is further explained by reduced exciton quenching at QDs/ZMO interface, which is confirmed by time-resolved PL experiments. Obtained results indicate that sol-gel derived ZMO is a promising candidate for ETL in quantum-dot based optoelectronic devices.
关键词： quantum dot,doped zinc oxide,sol-gel process,light-emitting diode,electron transport layer
更新于2025-09-23 15:19:57
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High-Speed Light Signal Transmitters for Optical Communication Based on Ultraviolet Radiation
摘要： A light signal transmitter based on ultraviolet radiation is realized on GaN-on-silicon platform. The light signal transmitter with ultra-small active area is fabricated by a double-etching process. The absolute value of negative junction capacitance of transmitter is as low as the pF (picofarads) scale in positive bias voltage. Small capacitance is bene?cial to improve the communication performance of a transmitter. The dominant EL (electroluminescence) peak of transmitter is located at about 380 nm in the ultraviolet range. With the increase of the current, the dominant peak of transmitter remains stable and the light output power is lineally modulated. A free-space data transmission test in the ultraviolet range with 250 Mbps was conducted to indicate a promising high-speed optical communication capability of a light signal transmitter in the ultraviolet range.
关键词： LED (light emitting diode),GaN,ultraviolet,optical communication
更新于2025-09-23 15:19:57
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Recycling of light-emitting diode waste quartz sand as a pozzolanic material
摘要： LED waste quartz sand (LEDWS), which is a prominent byproduct of the LED manufacturing process, may contaminate the environment because it comprises numerous nanoparticles of SiO2, Al2O3, and SiC, which are hazardous ingredients that are harmful to the environment and human health when disposed of improperly. Therefore, this study investigated the pozzolanic reaction behavior of these industrial byproducts to obtain a valuable processing method for LEDWS in cement. The results showed that with increased curing time, the strength of the pastes that incorporated 10% LEDWS approached that of ordinary Portland cement. A stretching broad band was centered at 1074e1081 cm-1 from chemically bound H2O in the hydrated calcium silicate (CeSeH). Thus, the correlation between the hydration degree of the paste that incorporated LEDWS and compressive strength evolution is crucial. The results implied that LEDWS can be used as a partial replacement source for cement applications; thus, LEDWS can be used as pozzolanic material.
关键词： Degree of hydration,Calcium silicate,Recycle,Light-emitting diode waste quartz sand,Pozzolanic reaction
更新于2025-09-23 15:19:57
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Stereoregular polymers with pendant carbazolyl groups: Synthesis, properties and optoelectronic applications
摘要： The most recent results concerning the stereospecific synthesis and the microstructural, chemico-physical and optical characterization of polymers containing pendant carbazolyl groups are reviewed for the first time. Stereoregular poly(N-alkenyl-carbazole)s, poly(4-(Ncarbazolyl) methyl styrene), poly(ω-(N-carbazolyl)alkyl acrylate)s and poly(ω-(N-carbazolyl)alkyl metacrylate)s are considered in this review, with a particular focus on the influence of polymer stereochemistry on photophysical behavior. Potential applications of these materials in light-emitting diodes (LEDs), electrochromic devices, electrophotography and holographic memories are also discussed. Among these, we show the appealing results of our experiments, concerning the color tuning in organic LEDs based on poly(N-pentenyl-carbazole) by means of the polymer chain stereoregularity.
关键词： Organic light emitting diode,Carbazole,Optical properties,Stereospecific polymerization
更新于2025-09-23 15:19:57
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Brain Photobiomodulation—Preliminary Results from Regional Cerebral Oximetry and Thermal Imaging
摘要： A new piece of equipment for LED (light emitting diode) brain photobiomodulation is introduced. Preliminary results from regional cerebral oxygen saturation and from thermography are shown before, during and after stimulation. The procedure offers a new way to quantify the biological effects of a possible innovative therapeutic method. However further measurements are absolutely necessary.
关键词： stroke,brain,LED (light emitting diode) stimulation,photobiomodulation,regional cerebral oxygen saturation,LED helmet,mental diseases,light therapy,wavelength,dementia,thermal imaging
更新于2025-09-19 17:15:36
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High Reliability of Ag Reflectors with AgCu Alloy for High Efficiency GaN-Based Light Emitting Diodes
摘要： We propose an Ag reflector layer with an AgCu alloy layer as a thermally reliable reflector for high power flip-chip and vertical light emitting diodes (LEDs). By annealing the deposited Ag and Cu layers, intermixed grains and grain boundaries from the alloyed AgCu layer were formed on the LEDs, and CuO nano dots precipitated at the grain boundaries. A thick AgCu layer was deposited to cover the AgCu alloy layer. The precipitation of the CuO nano dots at the grain boundaries suppressed Ag agglomeration, leading to enhanced light reflectance after the annealing process. Consequently, the alloyed AgCu/Ag reflector produced by annealing at a high temperature of 500 °C demonstrated a higher reflectance of 78% and a lower contact resistance of 7.0 × 10^{-5} Ω·cm2.
关键词： Light Emitting Diode,AgCu Alloy,Reflector,Nano Dots,Ohmic Contact
更新于2025-09-19 17:15:36