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PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process
摘要： In this paper, we have investigated the PdEr-silicide formation utilizing a developed PdEr-alloy target for sputtering, and evaluated the contact resistivity of PdEr-silicide layer formed on n-Si(100) by dopant segregation process for the first time. Pd2Si and ErSi2 have same hexagonal structure, while the Schottky barrier height for electron (Φbn) is different as 0.75 eV and 0.28 eV, respectively. A 20 nm-thick PdEr-alloy layer was deposited on the n-Si(100) substrates utilizing a developed PdEr-alloy target by the RF magnetron sputtering at room temperature. Then, 10 nm-thick TiN encapsulating layer was in-situ deposited at room temperature. Next, silicidation was carried out by the RTA at 500°C for 5 min in N2/4.9%H2 followed by the selective etching. From the J-V characteristics of fabricated Schottky diode, qΦbn was reduced from 0.75 eV of Pd2Si to 0.43 eV of PdEr-silicide. Furthermore, 4.0x10?8Ωcm2 was extracted for the PdEr-silicide to n-Si(100) by the dopant segregation process.
关键词： contact resistivity,PdEr-alloy target,RF magnetron sputtering,schottky barrier height,silicide
更新于2025-09-23 15:22:29
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Comparison of the Physicochemical Properties of TiO2 Thin Films Obtained by Magnetron Sputtering with Continuous and Pulsed Gas Flow
摘要： In this paper, a comparison of TiO2 thin ?lms prepared by magnetron sputtering with a continuous and pulsed gas ?ow was presented. Structural, surface, optical, and mechanical properties of deposited titanium dioxide coatings were analyzed with the use of a wide range of measurement techniques. It was found that thin ?lms deposited with a gas impulse had a nanocrystalline rutile structure instead of ?brous-like anatase obtained with a continuous gas ?ow. TiO2 thin ?lms deposited with both techniques were transparent in the visible wavelength range, however, a much higher refractive index and packing density were observed for coatings deposited by the pulsed gas technique. The application of a gas impulse improved the hardness and scratch resistance of the prepared TiO2 thin ?lms.
关键词： optical properties,scratch resistance,thin ?lms,gas impulse magnetron sputtering,microstructure,hardness,surface properties,mechanical properties,TiO2
更新于2025-09-23 15:21:21
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Fabrication and characterization of Mg-doped ?μ-Ga2O3 solar-blind photodetector
摘要： In this work, Mg-doped ε-Ga2O3 (3.38 cation % of Mg) solar-blind photodetector is fabricated by using radio-frequency magnetron sputtering and metal-organic chemical vapor deposition methods on sapphire substrate. The results show that the Mg-doped ε-Ga2O3 thin film solar-blind photodetector exhibit a photo-to-dark current ratio of 1.68 102, responsivity of 77.2 mA/W, specific detectivity of 2.85 1012 Jones, and external quantum efficiency of 37.8 % at 5 V under 40 μW/cm2 254 nm ultraviolet light illumination, as well as the stable light switching property driven by different applied voltages and light intensities. The achieved Mg-doped ε-Ga2O3 solar-blind photodetector is promised to advance relevant developments of the metastable Ga2O3 optoelectronic devices.
关键词： MOCVD,solar-blind,Mg dopant,magnetron sputtering,ε-Ga2O3
更新于2025-09-23 15:21:01
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Investigation of temperature stability of ITO films characteristics
摘要： The paper represents research of thermal stability of optical and electro-physical parameters of ITO films deposited using various techniques. Variation of optical and electro-physical parameters was recorded using spectroscopy, and Hall’s and four-probe measurements. The best thermal stability was demonstrated by ITO films deposited by metal target sputtering In(90%)/Sn(10%) in mixture of gases O2 (25%) + Ar (75%) with further annealing in air atmosphere. This enables to apply this technique for production of thin film transparent resistive elements capable to heat the translucent structures up to 100?С without deterioration of their parameters.
关键词： thermal stability,transparent heating elements,magnetron sputtering,ITO films
更新于2025-09-23 15:21:01
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Magnetron sputtered SnO <sub/>2</sub> constituting double electron transport layers for efficient PbS quantum dots solar cells
摘要： In this work, for the first time, we have successfully demonstrated that radiofrequency (RF) magnetron sputtered SnO2 can be a qualified alternative electron transport layer (ETL) for high-efficiency PbS quantum dot (QD) solar cell. Our highest-performing device using such a SnO2 ETL obtained an efficiency of 8.4%, which is comparable to the sol-gel ZnO based one (8.8%). The excellent performance mainly results from the improved current density, which is attributed to the superior properties of SnO2 ETL, such as the high electron mobility and excellent optical transmittance. However, we also found that the sputtered SnO2 based devices show smaller voltage and fill factor due to the unsatisfied surface morphology and energy level alignment. By combining a thin (around 10 nm) sol-gel ZnO film on top of sputtered SnO2 film to form the double ETL, we obtained the best efficiency of 10.1%, which is the highest efficiency for using SnO2 ETL in PbS QD solar cell. Our work not only provides a new avenue to improve the efficiency of PbS QD solar cells but also offers the possibility to use the industry compatible sputtering technique for PbS QD solar cells.
关键词： electron transporting layer,SnO2,magnetron sputtering,PbS,quantum dot solar cell
更新于2025-09-23 15:21:01
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Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application
摘要： In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10?2 ? cm was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.
关键词： working pressure,Al doped ZnO-MgO powder,RF magnetron sputtering,photovoltaic applications,thin films,solid-state method,optoelectronic properties
更新于2025-09-23 15:21:01
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LED Structures Based on ZnO Films Obtained by RF Magnetron Sputtering for the UV Spectral Range
摘要： Data for the influence of different defects on the photoluminescence and electroluminescence spectra (emission intensity and wavelength) of n-ZnO/p-GaN structures are reported.
关键词： ZnO films,photoluminescence,RF magnetron sputtering,UV spectral range,electroluminescence
更新于2025-09-23 15:21:01
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TiOxNy Thin Film Sputtered on a Fiber Ball Lens as Saturable Absorber for Passive Q-Switched Generation of a Single-Tunable/Dual-Wavelength Er-Yb Double Clad Fiber Laser
摘要： The use of titanium oxynitride (TiOxNy) thin ?lms as a saturable absorber (SA) element for generation of passive Q-switched (PQS) laser pulses, from a linear cavity Er-Yb double-clad ?ber (EYDCF) laser, is demonstrated. Additionally, the deposition of the material as a thin ?lm covering a ?ber micro-ball lens (MBL) structure is reported for the ?rst time. The TiOxNy coating is deposited by a direct current (DC) magnetron-sputtering technique. The MBL is inserted within the laser cavity in a re?ection con?guration, alongside a re?ecting mirror. As a result, the coated ?ber MBL simultaneously acts as a SA element for PQS laser pulses generation and as an interference ?lter for wavelength selection and tuning of the generated laser line. Tunable single-laser emission in a wavelength range limited by dual-wavelength laser generation at 1541.96 and 1547.04 nm is obtained. PQS laser pulses with a repetition rate from 18.67 to 124.04 kHz, minimum pulse duration of 3.57 μs, maximum peak power of 0.359 W, and pulse energy of 1.28 μJ were obtained in a pump power range from 1 to 1.712 W.
关键词： Q-switched ?ber lasers,titanium oxynitride,DC magnetron sputtering,?ber micro-ball lens,saturable absorber materials
更新于2025-09-23 15:21:01
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Optimized Growth of Gallium Oxide Thin Films Using Different Synthesis Processes
摘要： This paper investigates the optimized sputtering conditions for high quality gallium oxide (Ga2O3) thin films while maintaining a strong uniformity within a specific surface area. The research also analyzes the crystal structure and the morphology of gallium oxide (Ga2O3) thin films. We report a comprehensive investigation of two different types of Ga2O3 synthetization processes: (1) direct deposition using radio frequency (RF) magnetron sputter technique and (2) thermal oxidation of gallium nitride (GaN) samples. A detailed comparison is presented in terms of material characterization, surface analysis and electrical performance for each of the synthetization processes. X-ray photoelectron spectroscopy, scanning electron microscopy, atomic force microscopy and x-ray diffraction (XRD) are employed to study the gallium oxide (Ga2O3) epi-layers on each of the samples. Based on the analysis, Ga2O3 compound is found on all samples with a binding energy ranging from 21 eV to 21.38 eV. Depending on the synthetization process, the thickness varied from 20 nm to 100 nm for RF sputtering process and a maximum of 400 nm for thermal oxidation method. Additionally, the observations revealed that Ga2O3 is formed on the surface, as well as inside the gallium nitride (GaN) film after thermal oxidation. Crystal features are observed on the surface of each of the samples after annealing treatment while XRD analysis showed the presence of the beta (b) polymorph for the annealed samples. After thorough characterization, radio frequency sputtering technique proved to be superior due to its higher purity level and ability to create polycrystalline structures by adding temperature during deposition.
关键词： UHV RF magnetron sputtering,Gallium oxide,thermal oxidation,characterization
更新于2025-09-23 15:21:01
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Effect of oxygen vacancy on structural, optical, and photocatalytic properties of ceria films grown by magnetron sputtering deposition
摘要： Cerium oxide is of crucial importance for intrinsic redox reaction, which is attributed to the active sites neighboring oxygen vacancies. However, the role of oxygen vacancy (Ov) on the various properties of ceria ?lms remains to be elucidated. Herein, ceria ?lms were deposited by magnetron sputtering and the e?ect of electric current intensity on the creation of Ov was systematically investigated. X-ray photoelectron spectroscopy (XPS) results show that the Ce4+ concentration decreases with the increase of current intensity, which demonstrates that Ov can be created and tuned during ?lm deposition by controlling electric current intensity. The ?lm fabricated by 6 A current intensity has 42% Ce4+, approaching that of rhombohedral-Ce7O12, which is a stabilized bulk phase ceria. X-ray di?raction patterns reveal that 6 A ?lm shows mixed crystalline phases with the majority of peaks very close to rhombohedral-Ce7O12, while 1 A, 2 A, and 4 A ceria ?lms show simple crystalline phase. Raman analysis presents that dioxygen species are heavily absorbed on the surface of 6 A ?lm with more active sites on di?erent crystalline surfaces, which is con?rmed by photocatalytic degradation of Methylene Blue. The calculated bandgap by DFT (density functional theory) + U is consistent with that obtained from Tauc plots curves. This work demonstrates that Ov plays an important role on the properties of the ceria ?lm.
关键词： XPS,Raman,Oxygen vacancy,Magnetron sputtering,Cerium oxide
更新于2025-09-23 15:21:01