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24.5: Back-Channel-Etched a-IGZO TFTs with TiO <sub/>2</sub> :Nb Protective Layer
摘要： A back-channel-etched (BCE) process for the fabrication of a-IGZO TFTs is demonstrated, in which conductive TiO2:Nb (TNO) thin film is used to serve as protective layer for the a-IGZO active layer. TNO film could excellently protect a-IGZO due to its ultra-small surface roughness. With treatment by N2O plasma + 200°C annealing, the conductive TNO can be converted into an insulator to serve as an in situ passivation layer. Besides, the TNO in the source–drain (S-D) region remain conductive due to the protection of S-D electrodes, which could be proved by the XPS results. Compare with the conventional device without TNO protective layer, the S-D parasitic resistance (RSD) of devices with 1 nm and 5 nm TNO is significantly reduced. The positive bias stress stability is improved as well for the devices with TNO in situ passivation layer.
关键词： amorphous indium gallium zinc oxide (a-IGZO),Nb doped TiO2 (TNO),thin film transistors (TFTs),back-channel-etched (BCE) process
更新于2025-09-23 15:23:52
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Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator
摘要： Energy harvesters that scavenge biomechanical energy are promising power supply candidates for wearable and implantable electronics. Of the most widely used energy harvesters, piezoelectric generators can generate more electric charge than their triboelectric counterparts with similar device size, thus are more suitable to make compact wearable devices. However, most high-power piezoelectric generators are made from lead zirconate titanate, making them undesirable for wearable applications due to the toxic lead element. In this study, a flexible piezoelectric generator (F-PEG) is fabricated with chemically stable and biocompatible Group-III-nitride (III-N) thin film by a layer-transfer method. The III-N thin-film F-PEG can generate an open-circuit voltage of 50 V, a short-circuit current of 15 μA, and a maximum power of 167 μW at a load resistance of 5 M?. Applications of the III-N thin-film F-PEG are demonstrated by directly powering electronics such as light-emitting diodes and electric watches, and by charging commercial capacitors and batteries to operate an optical pulse sensor. Furthermore, the III-N thin-film F-PEG shows good durability and a stable output after being subjected to severe buckling tests of over 30,000 cycles.
关键词： flexible,piezoelectric generators,thin film,III-nitride,self-powered system,biocompatible
更新于2025-09-23 15:23:52
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Thermal evolution of morphological, structural, optical and photocatalytic properties of CuO thin films
摘要： Nanostructured CuO thin films were synthesized by thermal evaporation and annealing. Structural, optical and morphological changes in the CuO film upon annealing and their overall impact on its photocatalytic activity were investigated employing X-ray diffraction, UV–Vis absorption spectroscopy, atomic force microscopy and field emission scanning electron microscopy. Significant modifications in the morphological, optical, structural and photocatalytic behavior of nanostructured CuO thin film were observed upon thermal annealing. Thermal annealing led to the growth of CuO nanoparticles and the average size of CuO nanoparticles increased from 23 nm to 293 nm as the annealing temperature was increased to 600oC. CuO thin film sample annealed at 400 ? C exhibited superior photocatalytic activities over other samples for the degradation of malachite green and methylene blue dyes in 120 and 160 min, respectively. The improved photocatalytic behavior of CuO thin film annealed at 400 ? C is attributed to its narrower band gap, improved utilization of sunlight and enhanced adsorption of dye due to increased surface area arising from formation of CuO nanoparticles and their aggregates at the surface.
关键词： Methylene blue,CuO,Thin film,Photocatalysis,Malachite green
更新于2025-09-23 15:23:52
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Ion beam measurements for the investigation of TiN thin films deposited on different substrates by vacuum arc discharge
摘要： Titanium nitride thin films were deposited on different substrates using vacuum arc discharge system. Simultaneous ion beam analysis measurements including elastic backscattering (EBS) and nuclear reaction analysis (NRA); were applied for both composition analysis and thickness measurements of the prepared TiN films. Experimental conditions have been optimized to avoid overlapping of peaks of different nuclear reactions products, especially those related to interaction between ion beam and light elements present in totally different substrates. Independent compliment measurements utilizing time-of-flight elastic recoil detection analysis (TOF-ERDA), scanning electron microscopy (SEM) equipped with energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD) measurements were also applied to verify the experimental findings obtained by EBS and NRA measurements. The results have shown that all prepared TiN films have N/Ti ratio of around 1, with low levels of contamination elements.
关键词： IBA,TiN film,XRD,Substrates,SEM/EDX,Vacuum arc discharge
更新于2025-09-23 15:23:52
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Polymeric fluorescent film sensor based on poly(azomethine-urethane): Ion sensing and surface properties
摘要： A polymeric film sensor containing poly(azomethine-urethane) was easily fabricated using the dip-coating technique and ion sensing property of this film toward different metal cations investigated. Fluorescence measurements showed that fluorescent film sensor has been exhibited dual emission wavelengths at 540 and 582 nm and metal cation sensing behavior of this film studied using these two wavelengths. Also, fluorescent film sensor was showed selectivity and sensitivity toward iron (III) ions in deionized water with excellent photostability. The detection limit of the polymeric sensor was found as 86.15 and 28.90 μM at these wavelengths. The results indicated that chemosensor can be successfully applied for the detection of iron (III) ions in deionized water. Contact angle measurements of the film probe were also evaluated to investigate the surface hydrophilicity or hydrophobicity of the film.
关键词： Poly(azomethine-urethane),Fe (III) sensor,Film sensor,Surface property
更新于2025-09-23 15:23:52
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A New Catalyst Ti Doped CdO Thin Film for Non-Enzymatic Hydrogen Peroxide Sensor Application
摘要： A new material, Ti doped CdO (Ti: CdO) semiconductor, is firstly reported by this work for electrochemical non-enzymatic hydrogen peroxide (H2O2) sensor applications which was deposited by a simple, versatile and cost-effective chemical spray pyrolysis method on indium doped tin oxide (ITO) substrate. In the basic studies, first, the withstanding of cubic crystal phase along with worthy crystalline nature is discerned on CdO film after Ti doping, here only the preferentially orientated (200) diffraction plane shifted to (111). Subsequently, the irregular spherically shaped CdO nanoparticles (NPs) morphology changed as nearly uniform size with Ti doping is noticed with respect to thermal pyrolytic decomposition process. The existence of Ti atoms in Ti: CdO film is authentically identified and confirmed using EDX and XPS studies respectively. The absorption and emission properties of CdO and Ti: CdO films are studied and confirmed their narrow band gap nature. Importantly, the Ti: CdO film shows pronounced electrocatalytic activity for the reduction of hydrogen peroxide (H2O2) as compared to pure CdO. Hence, the non-enzymatic electrochemical sensing of Ti: CdO electrode shows a lower detection limit 0.4 μM with the linear range of 10-190 μM which displayed a fast amperometric response for 5 s with sensitivity of 0.27 μA μM-1 cm-2 toward H2O2 detection. This result will boost exploring a new opportunity for the deposition of other metal oxides and semiconductors by using a simple chemical spray pyrolysis method for detection of non-enzymatic H2O2 sensor applications.
关键词： H2O2 sensor,and selectivity,Chemical spray pyrolysis,Ti: CdO thin film
更新于2025-09-23 15:23:52
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Spin-orbit coupling in scattering of very low-energy spin-polarized electrons from Co film by (e,2e) spectroscopy
摘要： Energy and momentum distributions of correlated electron pairs excited by very low energy (9–30 eV) spin-polarized electrons from a thin Co film on a single crystal of W(110) were detected and analysed. Polarization of the incident electrons was perpendicular to the scattering plane. Spin effects are presented in form of asymmetry A = (I+ ? I?)/(I+ + I?), where I+ and I? are two-electron spectra recorded with incident electrons polarization parallel or anti-parallel to the magnetization of the sample, respectively. Performing measurements at two opposite magnetizations of the sample and assuming negligible interference between spin orbit coupling and exchange effect in scattering, two component of asymmetry can be extracted, namely a spin-orbit asymmetry ASO and an exchange asymmetry Aex. The spin-orbit component of the scattering asymmetry was analysed as a function of the primary energy. Contrary to normal expectations the value of spin-orbit asymmetry decreases with increase of the primary energy in the energy range from 9 to 30 eV.
关键词： Correlated electron pairs,Electron exchange,Asymmetry,Cobalt film,Spin-orbit
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Analysis of 1/f Noise for Organic TFTs Considering Mobility Power-Law Parameter
摘要： Based on carrier number fluctuation model, 1/f noise is analyzed for organic thin-film transistors (TFTs) at low drain voltage. The carrier mobility is gate-voltage-dependent, and is described by a power-law function. The mobility power-law parameter α determines the relationship between drain current noise power spectral density (PSD) SIDS and drain current IDS, and it is found that SIDS /I 2 DS when α = 1. It is different from the well-known rule for the MOSFETs with the constant carrier mobility: When SIDS /I 2 DS , Hooge’s mobility fluctuation model dominates the 1/f noise.
关键词： carrier mobility,Thin-film transistor (TFT),analytical model,low frequency noise
更新于2025-09-23 15:23:52
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Critical impact of gate dielectric interfaces on the trap states and cumulative charge of high-performance organic thin field transistors
摘要： In the operation of OFETs, the electrical properties are strongly dependent on the merits of the constituting layers and the formed interfaces. Here we study the trap states variations at the interface between the organic semiconductor pentacene and polymer insulators. With ZrO2 dielectric modified by polymers and find a 10 × decrease in the density of trap states at the semiconductor/insulator interface, bring about the charge carrier mobility increase from 0.058 cm2/Vs to 0.335 cm2/Vs. In addition, when compare to the thicker films at the same applied gate voltage, the thinner film would lead to enhanced coupling capability and more charges cumulative cumulated at the channel region, which is pivotal for optimizing the performance of OFETs. The results prove that the property of the insulator layer could impact largely on the device performance.
关键词： Organic thin film transistor,Cumulative charge,Insulator/semiconductor interface,Trap states
更新于2025-09-23 15:23:52
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Effect of structures and substrate temperatures on BaZn0.06Bi0.94O3- perovskite-based NTC thermistor thin films
摘要： Negative temperature coefficient (NTC) thermistor thin films based on perovskite-type BaBiO3 (BB) and BaZn0.06Bi0.94O3-δ (BZB) were successfully prepared by radio frequency (RF) magnetron sputtering method on Pt substrate. The crystal structure and grain morphology of the BZB and BB films deposited at different substrate temperatures (25–200 °C and 200 °C, respectively) were examined by X-ray diffraction (XRD) and atomic force microscope (AFM). The substrate temperature had a significant influence on the crystallinity and phase structure, in which the main crystalline phases with the cubic and tetragonal BaBiO3-based perovskite structures could be obtained on the substrate temperatures of 100 °C and 200 °C, respectively. On the other hand, the electrical properties were analyzed by measuring the resistance temperature (ρ-T) characteristics, and all the thin films exhibited good NTC thermistor characteristics. In addition, the grain (Rg) and grain boundary (Rgb) contribution to the total resistance were estimated by three parallel R-CPE equivalent circuits in series, in which the main contribution of resistance for BZB thin film deposited at 200 °C was derived from Rg response rather than that in Rgb at the higher temperature range. This was one of the most important reasons why this sample had a good NTC behavior, and this result was confirmed by the current-voltage (I-V) characteristics analysis. For the BB film, the room-temperature resistivity (ρ25) was 1540 Ω cm (B25/85 –3240 K), while the ρ25 value decreased to approximately 1156 Ω cm (B25/85 –3183 K) for BZB film deposited at a same substrate temperature (200 °C). This is mainly due to the change in crystal structural characteristics. It is believed that the substitution of Zn2+ for BB thin films deposited at an appropriate temperature will be useful for low-resistance applications as novel thin film NTC thermistors.
关键词： Substrate temperature,NTC thermistor,Electrical properties,BaBiO3,Thin film
更新于2025-09-23 15:23:52