1：Experimental Design and Method Selection:

Fabrication of p-channel pentacene OFETs with solution-processed ZrO2 gate dielectric at low temperature, modified with polymers (PMMA or PS) to study interface properties. Use of AFM, XRR, and electrical measurements to characterize morphology, thickness, and performance.

2：Sample Selection and Data Sources:

Si substrates cleaned and used for device fabrication. Precursor solutions prepared with zirconium(IV) isopropoxide isopropanol complex, acetylacetone, nitric acid, PMMA, PS, and solvents like anisole and toluene.

3：List of Experimental Equipment and Materials:

Spin coater for deposition, hot plate for annealing, UV light for curing, thermal evaporator for electrode deposition, Keithley 4200-SCS for electrical measurements, AFM for morphology, XRR for thickness, capacitance meter (4294 A) for capacitance-frequency characteristics.

4：Experimental Procedures and Operational Workflow:

Clean substrates, spin-coat ZrO2 layers, anneal, UV cure, spin-coat polymer modification layers, evaporate pentacene and Au electrodes, measure electrical properties and capacitance.

5：Data Analysis Methods:

Use equations for mobility, subthreshold slope, trap density calculation; statistical analysis of device parameters.