- 标题
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- 实验方案
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Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications
摘要： This paper presents a monolithic microwave integrated circuit Doherty power amplifier (DPA) operating at sub-6 GHz for 5G communication applications by a 0.25-μm gallium nitride high-electron mobility transistor process. A compact impedance inverter and output matching of the DPA are achieved using a transmission line network and shunt capacitors. Also, the size ratio of power cells in the main and auxiliary amplifiers is optimized for a high efficiency at output power backoff (OPBO). The measured peak output power (Pout) and the 1-dB compression point (P1 dB) are 38.7 and 32.1 dBm, respectively, at 5.9 GHz. The power-added efficiency at 6-dB OPBO is up to 49.5%. Without digital predistortion (DPD), the DPA can deliver an average Pout of 23.5 dBm with error vector magnitude (EVM) <?28 dB and 21.5 dBm with EVM <?32 dB for 64-quadrature amplitude modulation (QAM) and 256-QAM signals, respectively. The measured X-parameters are employed to further investigate the DPA nonlinear characteristics and verify the accuracy of conventionally used power amplifier characterization/measurement methods for system-level design and testing applications. The simulated results based on the X-parameters also indicate that the average output power can be enhanced up to 25.7 dBm with DPD for 256-QAM.
关键词： 5G communication,monolithic microwave integrated circuit (MMIC),X-parameters,power-added efficiency (PAE),power amplifier (PA),Doherty,gallium nitride (GaN)
更新于2025-09-23 15:21:21
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A broadband GaAs pHEMT low noise driving amplifier with current reuse and self-biasing technique
摘要： A K/Ka-band two-stage low noise driving ampli?er using a 0.15 lm GaAs pHEMT for low noise technology is designed and fabricated. In order to achieve broadband driving capability with low power consumption, current reuse technique is adopted to feed both transistors with the same DC power supply, which theoretically cuts the total current consumption in half. In addition, self-biasing technique is utilized to minimize both external power supply pads and chip footprint, which reduces the number of supply pads to a minimum of two (1 power pad and 1 ground pad). The circuit topology analysis and design procedures are also presented with an emphasis on noise ?gure and P1dB optimization. The low noise driving ampli?er demonstrates a - 3 dB bandwidth of wider than 11 GHz, a power gain of 17 dB, an in-band mean noise ?gure of 2.2 dB and an in-band mean output P1dB of 6 dBm. The DC power consumption is 9.1 mA@3.3 V power supply. The chip size is 1 mm 9 1.5 mm with only 1 external DC feed pad (3.3 V) and 1 ground pad (0 V). With the performance comparable to typical two-stage dual-bias low noise driving ampli?er counterparts, the proposed MMIC is more attractive to chip/system users in volume-limited and power-contrained applications.
关键词： Ka-band,Pseudomorphic high electron mobility transistor (pHEMT),GaAs,Low noise driving ampli?er,Monolithic microwave integrated circuit (MMIC)
更新于2025-09-19 17:15:36
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[IEEE 2019 14th European Microwave Integrated Circuits Conference (EuMIC) - Paris, France (2019.9.30-2019.10.1)] 2019 14th European Microwave Integrated Circuits Conference (EuMIC) - HEMT Small-Signal Modelling for Voltage-Controlled Attenuator Applications
摘要： Multi-bias measured and simulated S parameters are presented to validate the extension of an accurate on/off state HEMT switch small-signal modelling procedure to analog attenuator applications. Good agreements between measured and simulated multi-bias S parameters of the HEMT with a gate resistor are achieved by using only a common-gate real test-structure (without the gate resistor), which not only confirm the validity of the modelling for both digital and analog attenuator applications, but also validate the applicability of the capacitance network and extraction methods under more bias conditions.
关键词： small-signal model,voltage-controlled attenuator (VCA),high electron-mobility transistor (HEMT),monolithic microwave integrated circuit (MMIC)
更新于2025-09-12 10:27:22
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Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub
摘要： In this paper, we describe the design of the first reported full W-band (75–110 GHz) power amplifier (PA) monolithic microwave integrated circuits (MMICs) based on gallium nitride technology. The discussed MMICs come in two versions. Over a bandwidth (BW) of 70–110 GHz, the three-stage PA can deliver, on average, 25.6 dBm with a power-added efficiency (PAE) of 6.5%, while the four-stage PA is able to generate 27 dBm with a PAE of 6.1%. A peak output power of 28.6 dBm is achieved at 80 GHz with a PAE of 8.6%, which corresponds to a power density of 2.6 W/mm. The significant BW was achieved partially by incorporating a novel type of broadband radial stub into the design, which can provide nearly a twofold rejection-BW improvement over the conventional version. To the best of our knowledge, no other solid-state circuit can deliver such power levels over the complete W-band.
关键词： monolithic microwave integrated circuit (MMIC),Broadband,power amplifier (PA),high-electron-mobility transistor (HEMT),W-band (75–110 GHz),radial stub,gallium nitride,millimeter-waves (mm-waves)
更新于2025-09-09 09:28:46
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family
摘要： This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors’ 0.25 μm GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.
关键词： pseudomorphic high electron mobility transistor (pHEMT),X-Band,wideband amplifiers,high efficiency,Power Amplifier (PA),thermal analysis,EM simulation,monolithic microwave integrated circuit (MMIC)
更新于2025-09-04 15:30:14