- 标题
- 摘要
- 关键词
- 实验方案
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Barrier engineering for HgCdTe unipolar detectors on alternative substrates
摘要： Delta-doped layers together with compositionally grading have been utilized to get nBn configurations for the HgCdTe material system in all the short-wave (SWIR), medium-wave (MWIR) and long-wave (LWIR) infrared bands. Shockley Read Hall (SRH), trap-assisted tunneling (TAT), Auger and radiative recombination mechanisms have been included in the analyses and strong suppression of SRH and TAT currents have been demonstrated with the designed structures. This methodology is especially useful when the carrier lifetime is limited due to alternative substrate usage. No degradation in photo-response has been observed as adjusting the valence band offset is quite flexible with the delta-doped nano-layers and the valence band barrier can be completely removed. Calculations have been performed for 1–3 μs lifetime targeting the alternative substrate applications and up to 60 degrees of increase in the operation has been shown to be possible.
关键词： HgCdTe,nBn,Photodetector,Barrier structures
更新于2025-09-23 15:23:52
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Advances in III-V semiconductor infrared absorbers and detectors
摘要： Advances in bulk III-V semiconductor material such as InGaAsSb and metamorphic InAsSb, as well as in a variety of type-II superlattices such as InGaAs/GaAsSb, InAs/GaSb, and InAs/InAsSb, have provided continuously adjustable cutoff wavelength coverage from the short to the very long wavelength infrared. We perform basic theoretical analysis to provide comparisons of different infrared materials. We also briefly report experimental results on a mid-wavelength InAs/InAsSb type-II superlattice unipolar barrier infrared detector and a focal plane array with significantly higher operating temperature than InSb.
关键词： unipolar barrier,MWIR,infrared detector,e-SWIR,LWIR,antimonide,type-II superlattice,nBn,effective mass
更新于2025-09-23 15:23:52
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AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy
摘要： A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.
关键词： nBn detector,molecular-beam epitaxy,dark current,InSb,IR photodetector
更新于2025-09-23 15:21:01
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A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors
摘要： The dark current characteristics in InAs/GaSb type-II superlattice (SL) barrier infrared photodetectors are theoretically investigated using the drift-diffusion-based device simulator. It is shown that both structures can effectively reduce the dark current compared to the p-i-n photodiode without barrier, and the dependence on the barrier doping density are discussed in detail. There exists an optimum doping density to minimize the dark current in active region (n type), for which two different engineered structures, i.e., called pBn and nBn, are evaluated.
关键词： dark current,pBn,InAs/GaSb type-II superlattice,barrier infrared photodetectors,nBn
更新于2025-09-23 15:19:57
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Development of NbN polarization sensitive KID for Fusion Applications
摘要： In this paper, we present a preliminary study for the design of Kinetic Inductance Detectors (KID) sensitive to polarization, which will be employed in an innovative polarimetric system for fusion plasma diagnostics applications.
关键词： polarization sensitivity,Kinetic Inductance Detectors,NbN,fusion plasma diagnostics,polarimetry
更新于2025-09-04 15:30:14
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InAs/InAsSb Type-II Superlattice Mid-Wavelength Infrared Focal Plane Array With Significantly Higher Operating Temperature Than InSb
摘要： We report focal plane array (FPA) results on a mid-wavelength InAs/InAsSb type-II strained layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 μm. For 300 K background in the 3–5-μm band, f/2 aperture, an FPA operating at 150 K exhibits a mean noise equivalent differential temperature (NEDT) of 18.5 mK, and an NEDT operability of 99.7%. The NE(cid:2)T distribution has a width of 8 mK, with no noticeable distribution tail, indicating excellent uniformity. The mean noise-equivalent irradiance is 9.1 × 1011 photons/sec-cm2. The mean quantum ef?ciency is 49.1% without antire?ection coating, and the mean speci?c detectivity (D?) is 2.53 × 1011 cm-Hz?/W. Bene?tting from an absorber material with a much longer Shockley–Read–Hall minority carrier lifetime, and a device architecture that suppresses generation-recombination and surface-leakage dark current, the InAs/InAsSb T2SLS barrier infrared detector FPA has demonstrated a signi?cantly higher operating temperature than the mid-wavelength infrared market-leading InSb.
关键词： Infrared detector,heterostructure,InAs/InAsSb,type-II superlattice,photodetector,nBn,unipolar barrier,focal plane array
更新于2025-09-04 15:30:14