研究目的
Investigating the performance of a mid-wavelength InAs/InAsSb type-II strained layer superlattice (T2SLS) unipolar barrier infrared detector with a cutoff wavelength of 5.4 μm, focusing on its higher operating temperature compared to InSb.
研究成果
The InAs/InAsSb T2SLS barrier infrared detector FPA demonstrates significantly higher operating temperature than InSb, with excellent uniformity and performance metrics. This is attributed to the longer Shockley–Read–Hall minority carrier lifetime of the absorber material and the unipolar device architecture that suppresses dark current.
研究不足
The study is limited to the performance of the InAs/InAsSb T2SLS barrier infrared detector under specific conditions (300 K background, f/2 aperture) and does not explore the full range of potential applications or environmental conditions.
1：Experimental Design and Method Selection:
The study involves the design and fabrication of an nBn device using an InAs/InAsSb T2SL absorber and an AlAsSb electron unipolar barrier. The detector structure is grown on a GaSb substrate by molecular beam epitaxy.
2：Sample Selection and Data Sources:
The detector wafer is processed into discrete detectors and focal plane arrays (FPAs) for characterization.
3：List of Experimental Equipment and Materials:
Molecular beam epitaxy for growth, dry etch process for pixel definition, and hybridization to a readout integrated circuit (ROIC).
4：Experimental Procedures and Operational Workflow:
The FPA is characterized under 300 K background illumination and f/2 aperture, with measurements of noise equivalent differential temperature (NEDT), quantum efficiency (QE), and specific detectivity (D?).
5：Data Analysis Methods:
Analysis includes Arrhenius plots for temperature dependence of dark current density and fitting to the Varshni expression for band gap temperature dependence.
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