- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Integration of MoS <sub/>2</sub> with InAlAs/InGaAs Heterojunction for Dual Color Detection in Both Visible and Near‐Infrared Bands
摘要： At present, dual-channel or even multi-channel recording is a developing trend in the field of photodetection, which is widely applied in environment protection, security, and space science and technology. This paper proposes a novel MoS2/InAlAs/InGaAs n–i–n heterojunction phototransistor by integrating multi-layered MoS2 with InGaAs-based high electron mobility transistors (InGaAs-HEMTs). Due to the internal photocurrent amplification in the InGaAs channels with a narrow energy bandgap of 0.79 eV, this device exhibits high photoresponsivity (R) of over 8 × 105 A W–1 under near-infrared illumination of 1550 nm at 500 pW. Furthermore, with the combination of the photoconductance effect in the vertical MoS2/InAlAs/InGaAs n–i–n heterojunction and the photogating effect in the lateral phototransistor, this device possesses a unique characteristic under visible illumination that its photoresponsivity can be tuned by the top gate electrode from 6 × 105 A W–1 to -4 × 105 A W–1 by gate voltage. This may lead to a new application as an optically controlled electronic inverter, which needs further study in depth. This MoS2/InAlAs/InGaAs phototransistor builds up a new bridge between 2D materials and conventional ternary compounded semiconductor devices.
关键词： MoS2/InAlAs/InGaAs van der Waals heterojunction,gate-tunable negative/positive responsivity,dual-band photodetection,2D electron gas
更新于2025-09-11 14:15:04
-
Impact of A‐D‐A Structured Dithienosilole and Phenoxazine based Small Molecular Material for Bulk Heterojunction and Dopant‐free Perovskite Solar Cells
摘要： In this communication, we have designed and synthesized a novel acceptor-donor-acceptor (A-D-A) structured small molecule Si-PO-2CN based on dithienosilole (DTS) as building block flanked by electron-rich Phenoxazine (POZ) units terminated with dicyanovinylene which showed unique electrochemical and photo-physical properties. Si-PO-2CN has been successfully employed in perovskite solar cells (PSCs) as well as in bulk hetero-junction organic solar cells (OSCs). The PSCs fabricated with dopant free Si-PO-2CN as hole-transport material (HTM) exhibited a power conversion efficiency (PCE) of 14.1% (active area 1.02 cm2). Additionally, PCE of 5.6% has been achieved for OSCs using Si-PO-2CN as p-type donor material when blended with PC71BM acceptor. The versatile application of Si-PO-2CN provides path way for further implementation of DTS based building blocks in solar cells for designing new molecules.
关键词： A-D-A structured,dopant-free perovskite solar cells,bulk heterojunction,phenoxazine,small molecular material,dithienosilole
更新于2025-09-11 14:15:04
-
Polarimetric Three-Dimensional Topological Insulators/Organics Thin Film Heterojunction Photodetectors
摘要： As a state of quantum matter with insulating bulk and gapless surface states, topological insulators (TIs) have huge potential in optoelectronic devices. On the other hand, polarization resolution photoelectric devices based on anisotropic materials have overwhelming advantages in practical applications. In this work, the 3D TIs Bi2Te3/organics thin film heterojunction polarimetric photodetectors with high anisotropic mobility ratio, fast response time, high responsivity, and EQE in broadband spectra are presented. At first, the maximum anisotropic mobility ratio of the Bi2Te3/organics thin film can reach 2.56, which proves that Bi2Te3 can serve as a sensitive material for manufacturing polarization photoelectric devices. Moreover, it is found that the device can exhibit a broad bandwidth and ultrahigh response photocurrent from visible to middle wave infrared spectra (405?3500 nm). The highest responsivity (Ri) of the device can still reach 1.93 AW?1 at 3500 nm. In addition, the ultrahigh external quantum efficiency is 4534% with a fast response time (1.42 ms). Excellent properties mentioned above indicate that TIs/organics heterojunction devices are suitable for manufacturing high-performance photoelectric devices in infrared region.
关键词： polarization resolved,inorganics/organics heterojunction,photodetector,Bi2Te3 thin film,MWIR photodetectors
更新于2025-09-11 14:15:04
-
Effect of fullerene substituent on thermal robustness in polymer:fullerene bulk heterojunction solar cells
摘要： Effect of fullerene substituent on thermal robustness in polymer:fullerene bulk heterojunction solar cells using a conjugated polymer PTB7-Th. While 175 °C is the best annealing temperature for a solar cell with unmodified C70, it deteriorates a device with a substituted C70 (C70-PCBM). Additionally, annealing at 175 °C does not change the surface of PTB7-Th:C70 film but makes the surface of PTB7-Th:C70-PCBM film bumpy. The results suggest that the substituent promotes the migration of fullerene in polymer:fullerene solid composite.
关键词： fullerene,C70-PCBM,PTB7-Th,bulk heterojunction solar cells,thermal robustness
更新于2025-09-11 14:15:04
-
A 26-Gb/s 3-D-Integrated Silicon Photonic Receiver in BiCMOS-55 nm and PIC25G With ?15.2-dBm OMA Sensitivity
摘要： This letter presents a 3-D-integrated 26 Gb/s opto-electrical receiver front-end. The electronic integrated circuit (EIC) is fabricated in a BiCMOS-55-nm technology, ?ipped and placed on top of the photonic integrated circuits (PICs) die through copper pillars. In the receiver chain, a fully differential shunt-feedback TI ampli?er (FD-SF TIA) is followed by a limiting ampli?ers (LAs) with embedded equalization, output driver and an automatic offset cancelation loop. The whole receiver provides a transimpedance (TI) gain of 76 dB(cid:2) with 30-GHz bandwidth. By exploiting the FD-SF TIA with low parasitic capacitance of the Germanium dual heterojunction photo diode (Ge-PD) in the photonic die, the receiver achieves sensitivity of ?15.2 dBm optical modulation amplitude (OMA) at Ge-PD and ?10-dBm OMA at the single-mode ?12 and PRBS 15. ?ber (SMF) optical output with bit error rate of 10 The sensitivity is aligned with state-of-the-art receivers employing discrete photonics and, to author’s best knowledge, it is the lowest reported among published 25 Gb/s receivers exploiting silicon photonics.
关键词： Germanium dual heterojunction photo diode (Ge-PD),3-D-integrated,transimpedance ampli?er (TIA),limiting ampli?er (LA),opto-electrical receiver
更新于2025-09-11 14:15:04
-
MoS <sub/>2</sub> Quantum Dots Modified Black Ti <sup>3+</sup> –TiO <sub/>2</sub> /g‐C <sub/>3</sub> N <sub/>4</sub> Hollow Nanosphere Heterojunction toward Photocatalytic Hydrogen Production Enhancement
摘要： The MoS2 quantum dots (QDs) modified black Ti3+–TiO2/g-C3N4 hollow nanosphere heterojunction is synthesized via the continuous chemical template deposition and sculpture–reduction processes. The results of structural characterizations imply that the Ti3+–TiO2/g-C3N4/MoS2 QDs hollow nanosphere heterojunction is prepared successfully. The photocatalytic hydrogen evolution reaction (HER) of the B-TiO2/g-C3N4/MoS2 QDs (≈1524.37 μmol g?1 h?1) exhibits an enhancement of ≈33 folds compared with the normal TiO2. Furthermore, the process of photocatalysis and the mechanism of photocatalytic HER enhancement are explored, which can be ascribed to the HER activity sites of MoS2 QDs, Ti3+/Ov ions in the Ti3+–TiO2, and hollow nanosphere heterojunction, which are proved by electrochemical measurements.
关键词： MoS2 quantum dots,photocatalytic hydrogen production,heterojunction,black Ti3+–TiO2
更新于2025-09-11 14:15:04
-
Fabrication of high photosensitivity nanostructured n-Fe<sub>2</sub>O<sub>3</sub>/p-Si heterojunction photodetector by rapid thermal oxidation of chemically sprayed FeS<sub>2</sub> film
摘要： In this study, we have reported a novel route for the preparation of α-Fe2O3 by rapid thermal oxidation RTO of chemical sprayed FeS2 film at 550°C/20s condition under oxygen ambient. FeS2 to Fe2O3 film after RTO process. Raman shift data of Fe2O3 shows the presence of five Raman active vibration modes indexed to A1g and E1g modes. The dark and illuminated current-voltage properties of n-Fe2O3/p-Si heterojunctions have been investigated in the absence of the buffer layer and the ideality factor of n-Fe2O3/p-Si was 2.7.The responsivity of Fe2O3/Si photodetector was 0.51A/W at 500nm and 0.37A/W at 850nm. The specific detectivity of the photodetector was measured and it was around 60ns.The energy band line-up of n-Fe2O3/p-Si heterojunction was demonstrated under illumination condition.
关键词： Rapid thermal oxidation,Heterojunction,Energy band –line-up,Iron oxide,Iron sulfide
更新于2025-09-11 14:15:04
-
Two-Dimensional Heterojunction Photovoltaic Cells with Low Spontaneous-Radiation Loss and High Efficiency Limit
摘要： This work presents theoretical investigations on the spontaneous-radiation loss of two-dimensional van der Waals heterojunction photovoltaic cells (2D-PVcs) combined with an interference-based light-trapping structure. We find that 2D-PVcs possess much lower spontaneous radiation loss, since the solid angle of the spontaneous radiation is a magnitude smaller than that in traditional PVcs. The efficiency limit of a 2D-PVc can be 10% larger than that of a traditional PVc. Furthermore, we demonstrate that the spontaneous-radiation loss can be further reduced by introducing only a weak light-concentrating system, approaching the efficiency limit of traditional PVcs under perfect focus. In a trapped structure, the smaller the light absorption coefficients of the photovoltaic cells, the higher are the efficiency limits that are achieved. Finally, the spontaneous-radiation loss increases as the battery thickness increases, indicating that the 2D-PVc has the lowest spontaneous emission loss because of its extremely low thickness.
关键词： photovoltaic cells,two-dimensional heterojunction,spontaneous-radiation loss,light-trapping structure,efficiency limit
更新于2025-09-11 14:15:04
-
CTAB decorated SnO <sub/>2</sub> nanosheet assembled micro-flowers for photocatalysts
摘要： Self-driven photodetectors are widely used in communication and imaging. As a newly developed semiconductor material, perovskite quantum dots (QDs) are not only bandgap tunable, but also easily combined with other materials. In this paper, a vertical structure self-driven photodetector based on heterojunction of CsPbBr3 QDs and PbS QDs is proposed, and the device is prepared by solution spin coating method. The device can work in visible and near infrared (400–1130 nm) regions, and has excellent performance, such as ultrafast response speed (rise and decay time are 0.4 μs/0.73 μs under 532 nm laser irradiation in self-driven mode, the estimated response time under 1064 nm laser irradiation is about 11.5 μs), more than 100 dB linear dynamic range for both visible and infrared regions, and good stability. Similarly, the responsivity of the photodetector can also reach an average of 10 mA W?1, and the detectivity is 1.13 × 1010 Jones at 0 V bias for 1064 nm laser irradiation. The device combines two kinds of QDs revealing its good prospects and great advantages in self-driven photodetectors and high-speed optical communication devices.
关键词： perovskite,quantum dots,self-driven,heterojunction
更新于2025-09-11 14:15:04
-
BiFeO3/CH3NH3PbI3 Perovskite Heterojunction Based Near-Infrared Photodetector
摘要： The paper reports a hybrid (i.e. organic-inorganic) perovskite CH3NH3PbI3 and inorganic only perovskite BiFeO3 based heterojunction diode for near-infrared detection applications. The hybrid halide CH3NH3PbI3 is synthesized by using sol-gel chemical route while the BiFeO3 is synthesized by using a solid-state route. A layer of uniformly distributed BiFeO3 thin film is first grown on an indium doped tin oxide (ITO) coated glass substrate using BiFeO3 nanoparticles with an average size of ~65 nm. Then, CH3NH3PbI3 nanoparticles of average size ~45 nm with a tetragonal phase are deposited BiFeO3 film for fabricating the heterojunction device under study. The photoresponse is measured by using a monochromatic light over the wavelengths from 400 to 900 nm. The device shows a dual-band photoresponsivity originated from the individual absorption characteristics of BiFeO3 and CH3NH3PbI3 the heterojunction. The proposed photodetector shows the maximum responsivity of ~2 A/W at 800 nm for 2 V bias while the detectivity is estimated as ~7.8×1012 cmHz1/2/W. The photodetector has a reasonably good photoresponse with a rise time and fall time of 0.74 s and 0.088 s, respectively.
关键词： Photodetector,Heterojunction,Responsivity,BiFeO3,Perovskite,CH3NH3PbI3
更新于2025-09-11 14:15:04