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Triple-Junction Optoelectronic Sensor with Nanophotonic Layer Integration for Single Molecule Level Decoding
摘要： Interest in developing a rapid and robust DNA sequencing platform has surged over the past decade. Various next-/third-generation sequencing mechanisms have been employed to replace the traditional Sanger sequencing method. In sequencing by synthesis (SBS), a signal is monitored by a scanning charge-coupled device (CCD) to identify thousands to millions of incorporated dNTPs with distinctive fluorophores on a chip. Because one reaction site usually occupies dozens of pixels on a CCD detector, a bottleneck related to the bandwidth of CCD imaging limits the throughputs of the sequencing performance and causes tradeoffs among speed, accuracy, read length, and the numbers of reaction sites in parallel. Thus, current research aims to align one reaction site to a few pixels by directly stacking nanophotonic layers (NPLs) onto a CMOS detector to minimize the size of the sequencing platforms and accelerate the processing procedures. This article reports a custom integrated optoelectronic device based on a triple-junction photodiode (TPD) CMOS sensor in conjunction with NPL integration for real-time illumination and detection of fluorescent molecules.
关键词： planar waveguide,nanophotonic layer,CMOS,triple-junction photodiode (TPD),filter,grating
更新于2025-11-25 10:30:42
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Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes
摘要： Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50°C to 100°C. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.
关键词： separate absorption, grading, charge, and multiplication avalanche photodiode (SAGCM APD),optical communication,temperature coefficient,dead space effect
更新于2025-09-23 15:23:52
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Doping induced performance enhancement in inverted small molecule organic photodiodes operating below 1V reverse bias - Towards compatibility with CMOS for imaging applications
摘要： Organic photodiodes (OPDs) offer a myriad of advantages over conventional inorganic photodetectors, making them particularly attractive for imaging application. One of the key challenges preventing their utilization is the need for their integration into the standard CMOS processing. Herein, we report a CMOS-compatible top-illuminated inverted small molecule bi-layer OPD with extremely low dark leakage current. The device utilizes a titanium nitride (TiN) bottom electrode modified by a [6,6]-phenyl C61 butyric acid methyl ester (PCBM) cathode buffer layer (CBL). We systemetically show that doping the CBL enhances device's low voltage (below 1 V reverse bias) photoresponse by increasing the linear dynamic range (LDR) and making the bandwidth of the photodidoe broader without compromising the leakage current. The optimized device exhibits a dark leakage current of only ~ 6 x 10-10 A/cm2 at -0.5 V. The external quantum efficiency (EQE) at 500 nm reaches 23% with a calculated specific detectivity as high as 7.15 x 1012 cm Hz1/2/W (Jones). Also the LDR approaches 140dB and the bandwidth is about 400kHz, at -0.5 V bias. The proposed device structure is fully compatible with CMOS processing and can be integrated onto a CMOS readout circuit offering the potential to be applied in high-performance large-scale imaging arrays.
关键词： Interface engineering,Doping,CMOS,Titanium nitride,Organic photodiode,Cathode buffer layer
更新于2025-09-23 15:23:52
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Backside-illuminated CMOS Photodiodes with Embedded Polysilicon Grating Reflectors
摘要： In this study, we investigated the feasibility of replacing metal mirrors with polysilicon gratings to serve as compact optical back reflectors in thin backside-illuminated CMOS photodiodes (BSI CPDs). The unique reflective properties of polysilicon grating reflectors can be implemented within a very small area (12 μm2); i.e., between the contact vias of BSI CPDs. The proposed scheme achieves high optical reflectivity for TE-polarized light at wavelengths exceeding 100 nm, while improving responsivity at near-infrared wavelengths. The resulting BSI CPDs were shown to enhance photocurrent by 1.45x in a polarization-dependent manner (ITE/ITM =1.148) at a wavelength of 980 nm.
关键词： complementary metal oxide semiconductor (CMOS),backside-illuminated photodiode,polysilicon grating reflector
更新于2025-09-23 15:22:29
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Design of InP Based High Speed Photodiode for 2 μm Wavelength Application
摘要： In this paper, we proposed and designed the high speed uni-traveling carrier photodiodes operating beyond 2 μm. InGaAs/GaAsSb type-II multiple quantum wells (MQWs) were used as the absorption region of uni-traveling carrier photodiode to have optical response beyond 2 μm. A rate equation model was developed to study the bandwidth characteristics of this photodiode. The carrier dynamics of the carrier sweeping out process was discussed, and the structure parameters of the quantum wells were optimized. Result shows a 3-dB bandwidth over 40 GHz can be achieved with the optimized design. We also studied the feasibility of dual depletion PIN (DD-PIN) photodiode with MQWs absorber. The optimized DD-PIN photodiode could achieve similar bandwidth under relatively high-bias condition.
关键词： high speed photodiodes,type-II quantum well,Carrier dynamic,uni-traveling carrier photodiode
更新于2025-09-23 15:22:29
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[IEEE 2018 18th International Symposium on Communications and Information Technologies (ISCIT) - Bangkok, Thailand (2018.9.26-2018.9.29)] 2018 18th International Symposium on Communications and Information Technologies (ISCIT) - Design of Voltage Reference Comparator Circuit for Receiver Circuit in VLC System
摘要： Visible light communication (VLC) system is a wireless communication from light of the light emitting diode (LED). In this work, we design the voltage reference comparator circuit method for the receiver circuit with data communication via white LED. In this experiment, we evaluate the VLC system of the transmitter circuit and receiver circuit by using bits data communication with the distance 50 to 100 cm. We measure the frequency of the white LED signal detection between the transmitter circuit and the receiver circuit, which the frequency uses about 9.615 kHz. This comparator circuit method can be used to refer the voltage signals of the receiver circuit in VLC system.
关键词： Photodiode,Amplify circuit,Light emitting diode,Visible light communication,Comparator circuit
更新于2025-09-23 15:22:29
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Towards fast and highly responsive SnSe <sub/>2</sub> based photodiode by exploiting the mobility of the counter semiconductor
摘要： In photodetection, the response time is mainly controlled by the device architecture and electron/hole mobility, while the absorption coefficient and the effective separation of the electrons/holes are the key parameters for high responsivity. Here, we report an approach towards the fast and highly responsive infra-red photodetection using n-type SnSe2 thin film on p-Si (100) substrate keeping the overall performance of the device. The I-V characteristics of the device show a rectification ratio of ~147 at ± 5 V and enhanced optoelectronic properties under 1064 nm radiation. The responsivity is 0.12 A/W at 5 V and the response/recovery time constants were estimated as ~ 57±25/34±15 μs respectively. Overall, the response times are shown to be controlled by the mobility of the constituent semiconductors of a photodiode. Further, our findings suggest that n-SnSe2 can be intergrated with well established Si technology with enhanced opto-electronic properties and also pave the way in the design of fast response photodetectors for other wavelengths as well.
关键词： Selenisation,DC sputtering,IR-Photodiode,SnSe2,Mobility
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Novel Fiber Alignment Method for On-Wafer Testing of Silicon Photonic Devices with PN Junction Embedded Grating Couplers
摘要： We propose a new fiber alignment method using a PN junction embedded grating coupler (GC). It enables us to quickly and easily search the optimum position for optical coupling between the GC and an optical fiber, enabling efficient on-wafer testing.
关键词： fiber alignment,on-wafer testing,photodiode,grating coupler
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - High-Power Photonic Phased Array Antennas
摘要： We review recent work on a new antenna concept— the high-power photonic phased array. By integrating high-power photodiodes proximal to the transmit aperture’s radiating elements, dense, lightweight, and broadband array designs are realized. Several manifestations of this idea are discussed, emphasizing different application-specific design choices.
关键词： RF photonics,ultra-wideband (UWB),photonic antenna,phased array antenna,5G,high-power photodiode,millimeter wave (mmW)
更新于2025-09-23 15:22:29
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Fast neutron detectors with silicon photomultiplier readouts
摘要： This work summarizes a fast neutron detection performance of two different silicon photomultipliers from two manufacturers. The first SiPM (MAPD-3NK) from Zecotek Photonics consists of deeply buried cells with the active area 3.7x3.7 mm2. The second one (MPPC-S12572-010P) from Hamamatsu, however, consists of surface cell structure which the active area is 3x3 mm2. Both SiPMs have the same pixel density of 10000 mm-2. Both SiPMs coupled to Stilbene (5*5*5 mm3) and p-terphenyl (5*5*5 mm3) plastic scintillators were evaluated for detection ability of fast neutrons using a PuBe neutron source. Charge comparison and zero crossing neutron/gamma discrimination techniques were performed for these detectors and the results were compared. The obtained results prove a good fast neutron detection performance of the SiPMs which makes it possible to use these types of neutron detectors in fast neutron detection applications.
关键词： Pulse shape discrimination,Micropixel avalanche photodiode,Charge comparison,SiPM,MAPD,PSD,Zero crossing,Silicon photomultiplier
更新于2025-09-23 15:21:21