研究目的
Investigating the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiodes using a temperature-dependent dead space model to design APDs with low temperature coefficient.
研究成果
The proposed temperature-dependent dead space model is consistent with experimental results, showing a low temperature coefficient of 90 mV/K for breakdown voltage. The model is reliable and can guide the design of APDs with controlled temperature sensitivity, though challenges remain in balancing gain and bandwidth for broader applications.
研究不足
The model may have simplifications, such as assuming zero excess energy after ionization, and the trade-off between gain and bandwidth in APDs limits simultaneous application in high-speed and quantum communication systems.
1：Experimental Design and Method Selection:
A temperature-dependent dead space model was developed based on static Poisson's equation and carrier transport equations, incorporating dead space effect and temperature variations.
2：Sample Selection and Data Sources:
InP/InGaAs SAGCM APDs were used, with experimental data from previous work [18] for comparison.
3：List of Experimental Equipment and Materials:
Not specified in the paper.
4：Experimental Procedures and Operational Workflow:
Simulations were performed using the proposed model to calculate breakdown voltage and bandwidth over a temperature range from -50°C to 100°C, and results were compared with experimental measurements.
5：Data Analysis Methods:
Linear fitting was applied to simulation and experimental data to determine temperature coefficients; consistency was assessed through comparison.
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