- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Diffusion of Ar atoms implanted in a TiO2 matrix studied with Temperature Programmed Out-Diffusion?
摘要： The diffusion of noble gas argon in the near-surface region of rutile TiO2 has been explored with the Temperature Programmed Out-Diffusion (TPOD) method. The Ar atoms were deposited in a several-nanometer-deep layer of the single-crystal TiO2(110) surface by bombardment with 1–5 keV energy Ar ions. Subsequently, in the TPOD experiments this sample was heated at a linear rate and the out-diffusion of argon was monitored with a mass-spectrometer. Surface conditions were probed with Auger Electron Spectroscopy (AES) and Low-Energy Electron Diffraction (LEED). The experimental results were analyzed with the aid of numerical simulations. The measurements showed a dependence of the Ar diffusion rates on the concentration of buried argon and composition of the surface layer. The kinetic parameters of Ar diffusion in pristine rutile TiO2 were estimated as Ea = 104 kJ/mol and D0 = 6 ? 10?9 m2/s. A distinctive diffusion regime, related to the rock salt TiO phase formation, were identified.
关键词： Sputtering,TiO2,Low-energy ion implantation,Solid diffusion,Ar
更新于2025-09-23 15:23:52
-
Preparation of high-quality stress-free (001) aluminum nitride thin film using a dual Kaufman ion-beam source setup
摘要： We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films. The AlN thin films were deposited by a reactive sputtering technique at substrate temperatures up to 330 °C using a dual Kaufman ion-beam source setup. We deposited the AlN on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film and compared their crystallographic, optical, and piezoelectric properties. The AlN thin films deposited on the (001) preferentially oriented Ti thin films have the highest crystallographic quality. The stress-free AlN reached a high value of the piezoelectric coefficient d33 = (7.33 ± 0.08) pC·N?1. The properties of the AlN thin film prepared at such low temperatures are suitable for numerous microelectromechanical systems, piezoelectric sensors, and actuators monolithically integrated with complementary metal-oxide-semiconductor signal-processing circuits.
关键词： Ellipsometry,Aluminum nitride thin film,Optical properties,d33 piezoelectric coefficient,Kaufman ion-beam source,Ion-beam sputtering deposition,(001) preferential orientation,X-ray diffraction
更新于2025-09-23 15:23:52
-
Influence of chemical composition on phase transformation and optoelectronic properties of Cu–Cr–O thin films by reactive magnetron sputtering
摘要： Cu–Cr–O films were co-sputtered from Cu and Cr targets on fused silica substrates. Then, these films were annealed at 700 °C for 2 h under controlled Ar atmosphere. [Cu]/[Cr] ratio was increased from 0.59 to 2.02 by increasing the Cu-target power from 10 W to 52 W. When the film was prepared at Cu-target power of 10 W, a pure spinel CuCr2O4 phase was formed in the film. As the Cu-target power increased to 22 W, the phase transformed gradually from spinel CuCr2O4 to delafossite CuCrO2. Further increase of Cu-target power resulted in the appearance of an additional monoclinic CuO phase. The [Cu]/[Cr] ratio was approximately 1 at Cu-target power of 22 W, which caused the film to exhibit pure delafossite CuCrO2 phase and high crystallinity. Accordingly, optimum electrical conductivity and visible transparency were achieved for the pure CuCrO2 film prepared at Cu-target power of 22 W with a figure of merit of 1.51 × 10?8 Ω?1. The formation of the CuO and CuCr2O4 phase was confirmed to deteriorated optoelectronic properties of films.
关键词： Phase change,Ceramic coating,Sputtering,Coating process
更新于2025-09-23 15:23:52
-
A novel and facile way to fabricate transparent superhydrophobic film on glass with self-cleaning and stability
摘要： Transparency is one of the most important properties of superhydrophobic (SHP) surface applied on outdoor solar cells and other outdoor windows. In this work, transparent SHP ZnO surface was fabricated via RF magnetron sputtering method. The effect of film thickness and surface roughness on the wettability and optical property of the as-prepared surfaces were investigated. Results show that the as-prepared SHP ZnO surface with sputtering time of 2 min exhibits excellent self-cleaning property and stability against corrosive rain, various environmental temperatures and impacting water droplet with high velocity. The fabrication process is stable and easy to control, which can largely widen the applications of the as-prepared transparent SHP surfaces.
关键词： Self-cleaning,Sputtering,Nanostructure,Transparency,Stability,Superhydrophobic
更新于2025-09-23 15:23:52
-
The sputtering yield of crystalline Si(1?0?0) surface by monoatomic and diatomic nitrogen ions impact
摘要： We have investigated the sputtering rate of thin crystalline silicon film forming silicon-on-insulator structure impinged by atomic and molecular nitrogen ions with medium energies of 25, 50, and 100 keV/(N atom) at several incident angles of 0, 30, 45, and 60°. The thickness of the surface silicon layer after ion irradiation was quantitatively estimated by Rutherford backscattering spectroscopy using 2.56-MeV 10B2+ ions with a grazing angle geometry to accurately analyze the thickness decrement in several nanometers for ultrathin Si layers. The sputtering rates were compared with a full-cascade TRIM simulation based on a binary collision approximation. We found that the sputtering yields of monoatomic N ion with higher energies (> 50 keV/N) took significantly higher than that of diatomic N2 ion, probably suggesting that a wake-like effect of relatively fast N^N molecular ions surviving for a long period due to a considerably strong triple bond. In addition, the observed sputtering yields for all present conditions were a few times smaller than that estimated by the full-cascade TRIM calculation using typical lattice parameters. We quantitatively discuss the details of sputtering phenomenon of crystalline silicon by nitrogen ions at medium energy region.
关键词： Medium energy,Molecular ion,Sputtering,Rutherford backscattering spectroscopy,Silicon
更新于2025-09-23 15:23:52
-
Influence of porosity and pore size on sputtering of nanoporous structures by low-energy Ar ions: Molecular dynamics study
摘要： In this paper we have carried out molecular dynamics simulation of the low-energy Ar ion irradiation of nanoporous homogeneous material with different porosity and pore sizes. Our results demonstrate that in a model with small pores (Rpore = 0.8 nm) and relatively low (22%) porosity, the pores at near-surface layers collapsed due to the ion bombardment, whereas in a model with larger pores (Rpore = 2.8 nm) and higher (44%) porosity no significant structural changes occurred under the same irradiation conditions. To study thermal stability of porous structures and to reveal the effects of both the pore radius and the porosity on pore collapsing, our nanoporous structures were subjected to gradual heating. The simulation results demonstrate distinct mechanisms of structural changes in the nanoporous materials depending on the value of the excess surface energy per unit volume.
关键词： low-k dielectrics,plasma treatment,nanoporous material,pore collapse,sputtering
更新于2025-09-23 15:23:52
-
Evolution of microstructures and optical properties of gadolinium oxide with oxygen flow rate and annealing temperature
摘要： In this study, the effects of oxygen flow rate and annealing temperature on Gd2O3 structures and optical properties were systematically analyzed. Gd2O3 films were deposited on both quartz and ZnS substrates by magnetron sputtering and then annealed under vacuum at 700, 800, and 900 (cid:1). Restructure and phase transformation from cubic to monoclinic occur at different temperatures depending on the oxygen flow rate. The optical band gap, which is more sensitive to the annealing temperature than oxygen flow rate changes from 5.32 to 5.65 eV. The refractive index is approximately 1.75 at 550 nm and is adjustable by the oxygen flow rate. The transmittance of the ZnS substrate with Gd2O3 film exceeds 80% and reaches 82% at the 7.5–9.5 μm range. When ZnS is coated on both sides, the transmittance is increased to approximately 90%. Our results indicate that Gd2O3 films are promising new candidates for anti-reflective coatings in the infrared region.
关键词： Rare earths,Infrared materials,Structures,Optical properties,Gadolinium oxide,Magnetron sputtering
更新于2025-09-23 15:23:52
-
Influence of substrate and substrate temperature on the structural, optical and surface properties of InGaN thin films prepared by RFMS method
摘要： In this work, the pure InGaN thin films were grown using n-type and p-type silicon substrates at varying substrate temperatures using the sputtering method. The effects of substrate and substrate temperature on the structural, morphological and optical properties of the thin films grown were investigated. X-ray diffraction (XRD) analyzes of the obtained films illustrates crystal structures at C substrate temperature, the films were found to be hexagonal. Scanning electron microscopy (SEM) was used to investigate the shape, size and surface distribution of the particles formed on film surfaces. The reflection and optical band gap (Eg) of the films were investigated from the optical analyzes taken with the UV-VIS spectrophotometer. As a result of these analyzes, it has been reached that the substrate and substrate temperature have a great influence on the structural, morphological and optical properties of the films. The experimental findings obtained in the study are compared with the studies given in the literature and the similarities and differences are discussed.
关键词： InGaN growth,silicon substrate,thin films,sputtering technique,substrate temperature
更新于2025-09-23 15:23:52
-
Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering
摘要： A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films with (002) preferred orientation. Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt Schottky diodes were fabricated for photodetection studies. The Schottky barrier height was lowered for Cr doped ZnO film as compared to ZnO film. The ideality factor was improved upon Cr doping. Pt/ZnO/Pt diode was unresponsive to visible light, however, Pt/Cr doped ZnO/Pt diode showed response to visible light with short response and recovery times. The response of the Pt/Cr doped ZnO/Pt diodes to visible light is attributed to the reduction in band gap of the Cr doped ZnO thin film.
关键词： Thin films,Schottky contact,Chromium-doped Zinc oxide,Sputtering,Photodetectors
更新于2025-09-23 15:23:52
-
High performance thin film transistors with sputtered In-Al-Zn-O channel and different source/drain electrodes
摘要： High performance thin film transistors (TFTs) based on sputtered In-Al-Zn-O (IAZO) channel layer with excellent photoelectric properties were fabricated and characterized. The IAZO films remained amorphous with low surface roughnesses both before and after annealing. The Hall mobility increased from 27.1 to 74.2 cm2/Vs after annealing. High average transmittances over 95% in the visible range and wide optical band gaps around 4.1 eV were obtained for both unannealed and annealed IAZO films. The energy level diagrams of IAZO films before and after annealing were derived based on the UPS measurements. A high field-effect mobility of 20.57 cm2/Vs, a high on-off current (Ion/Ioff) ratio of 4.02×107, and a subthreshold swing (SS) of 0.55 V/dec were obtained for the IAZO TFT with Au electrodes. In comparison, though a lower mobility of 9.54 cm2/Vs was exhibited, a higher Ion/Ioff ratio of 7.39×107, a lower SS, and a much lower hysteresis were obtained for the TFT with Ti electrodes.
关键词： IAZO,Sputtering,TFT
更新于2025-09-23 15:23:52