研究目的
To investigate the influence of substrate type (n-type and p-type silicon) and substrate temperature on the structural, optical, and surface properties of InGaN thin films prepared by RFMS method.
研究成果
The substrate and substrate temperature significantly influence the structural, morphological, and optical properties of InGaN thin films. Higher substrate temperatures improve crystallization and reduce defects, leading to better film quality. Films can be tailored for applications such as solar cells, anti-reflection coatings, and optoelectronic devices based on their properties. Future studies should focus on optimizing parameters for enhanced performance.
研究不足
The study is limited to specific substrate types (n-type and p-type silicon) and temperature ranges (300°C and 500°C). The RFMS method may have constraints in terms of deposition uniformity and scalability. Potential areas for optimization include exploring a wider range of temperatures and substrates, and improving film quality for industrial applications.
1：Experimental Design and Method Selection:
InGaN thin films were deposited using radio frequency magnetron sputtering (RFMS) with a 99.95% InGaN target. The study varied substrate type (n-type and p-type silicon) and substrate temperature (300°C and 500°C) to analyze their effects on film properties.
2：95% InGaN target. The study varied substrate type (n-type and p-type silicon) and substrate temperature (300°C and 500°C) to analyze their effects on film properties.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: Silicon substrates (n-type and p-type) were chemically cleaned to remove surface contamination before deposition. Films were grown to a thickness of approximately 150 nm.
3：List of Experimental Equipment and Materials:
Equipment includes an RF sputtering system, PANalytical Empyrean X-ray diffraction device, UV-VIS spectrophotometer (UV-3600 Plus model), scanning electron microscope (SEM), and profilometer. Materials include InGaN target, silicon substrates, argon gas.
4：Experimental Procedures and Operational Workflow:
Substrates were cleaned and placed in the vacuum chamber. Target was pre-sputtered to remove contaminants. Deposition was performed with parameters including RF power (153 W and 136 W), working pressure (1.4x10^-2 Torr), base pressure (1.4x10^-6 Torr and 9.8x10^-7 Torr), argon flow rate (100 sccm), and substrate temperatures (300°C and 500°C). Film thickness was monitored using an Au-coated quartz crystal thickness monitor and confirmed with a profilometer.
5：4x10^-2 Torr), base pressure (4x10^-6 Torr and 8x10^-7 Torr), argon flow rate (100 sccm), and substrate temperatures (300°C and 500°C). Film thickness was monitored using an Au-coated quartz crystal thickness monitor and confirmed with a profilometer.
Data Analysis Methods:
5. Data Analysis Methods: Structural properties were analyzed using XRD to determine crystal structure and orientation. Optical properties were analyzed using UV-VIS spectrophotometry to measure reflection and calculate optical band gap via Kubelka-Munk equation. Morphological properties were analyzed using SEM to examine surface morphology.
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