研究目的
To reduce the band gap of ZnO to improve its responsivity for visible light by doping with chromium, and to study the effect of Cr doping on Schottky parameters and photosensing properties of Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt diodes.
研究成果
Cr doping lowers the Schottky barrier height and improves the ideality factor of Pt/ZnO contacts, enabling visible light detection with responsivity of 1.3 × 10^{-3} A/W and response/recovery times of 5 s, attributed to band gap reduction. This demonstrates the potential of Cr-doped ZnO for visible light photodetectors.
研究不足
The study is limited to specific deposition conditions and Cr doping concentration (1.5 atomic percent). Response and recovery times are relatively slow (5 s), and there may be persistent photoconductivity effects. The applicability to other dopants or substrates is not explored.
1：Experimental Design and Method Selection:
Films were deposited using RF magnetron sputtering for ZnO and simultaneous RF and DC magnetron sputtering for Cr-doped ZnO. Schottky diodes were fabricated with Pt electrodes for electrical and photodetection studies.
2：Sample Selection and Data Sources:
Si (100) substrates were used. Films were characterized using XRD, EDX, AFM, and IV measurements.
3：List of Experimental Equipment and Materials:
Equipment includes RF and DC magnetron sputtering systems, thermal evaporator, surface profiler (Alpha-step IQ, KLA Tencor), XRD (Bruker D8 advance), AFM (Asylum research), EDX with SEM (JEOL JSM-6360), semiconductor parameter analyzer (Agilent 4156C), and halogen lamp (35 W). Materials include ZnO target (
4：99%), Cr target (99%), Si substrates, Pt for electrodes, and cleaning chemicals (H2SO4, H2O2, HF, water, alcohol, acetone). Experimental Procedures and Operational Workflow:
Substrates were cleaned, targets were pre-sputtered, films were deposited under controlled conditions (pressure, power, temperature), thickness was measured, Pt electrodes were deposited via thermal evaporation, and characterization and measurements were performed.
5：Data Analysis Methods:
Schottky parameters were extracted using the thermionic emission model from IV characteristics. Responsivity was calculated from photocurrent measurements.
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