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Silver Nanowires Inks for Flexible Circuit on Photographic Paper Substrate
摘要： Silver nanowires (AgNWs) have inspired many research interests due to their better properties in optical, electric, and flexible applications. One such exploitable use is as the electrical conductive fillers for print electronics. In this paper, AgNWs with mean a diameter of 80 nm and mean length of 13.49 μm were synthesized using the polyol solvothermal method. A sonication-induced scission process was used to obtain AgNWs with a length range of 7.64–11.21 μm. Further AgNWs inks were prepared with the as-synthesized AgNWs as conductive fillers in anhydrous ethanol. The conductive inks were coated on resin coated photographic paper substrate using the knife coating process and dried at room temperature. The effects of the number of layers of AgNWs coating, the concentration of AgNWs, and the length of AgNWs on the microstructure and electrical properties of samples were investigated by scanning electron microscopy and using the four-point probe method. The results show that the conductivity of the AgNWs coating increases with the increase in the number of layers in the AgNWs coating, concentration and length of the AgNWs.
关键词： sheet resistance,silver nanowires inks,flexible circuit,photographic paper
更新于2025-09-23 15:22:29
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Electrical characterization of single nanometer-wide Si fins in dense arrays
摘要： This paper demonstrates the development of a methodology using the micro four-point probe (μ4PP) technique to electrically characterize single nanometer-wide fins arranged in dense arrays. We show that through the concept of carefully controlling the electrical contact formation process, the electrical measurement can be confined to one individual fin although the used measurement electrodes physically contact more than one fin. We demonstrate that we can precisely measure the resistance of individual ca. 20 nm wide fins and that we can correlate the measured variations in fin resistance with variations in their nanometric width. Due to the demonstrated high precision of the technique, this opens the prospect for the use of μ4PP in electrical critical dimension metrology.
关键词： micro four-point probe,electrical characterization,finFET,sheet resistance,critical dimension metrology
更新于2025-09-23 15:22:29
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Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic On-Resistance in GaN HEMTs
摘要： The dynamic on-resistance is problematic as it can impair the converter's efficiency due to the increased conduction loss. In this paper, the hard-switching transient's effect on the dynamic on-resistance is, for the first time, evaluated experimentally on a commercial high-voltage GaN HEMT. A new R_dyn-ds,on measurement circuit with fast sensing speed is designed, and an accurate measurement of R_dyn-ds,on can be realized experimentally within 49.6 ns after the device's current reaches to the load current. A double-pulse-test setup is designed to comprehensively evaluate the switching transient's effect on R_dyn-ds,on under different operating conditions. From the experimental results, it is found that the turn-on and turn-off gate resistance have a significant impact on the dynamic on-resistance whereas the cross-talk effect on R_dyn-ds,on is negligible. Specifically, at 400 V/25 A, more than 27% (28.2%) increase in R_dyn-ds,on is observed when the external turn-on (turn-off) gate resistance increases from 0 Ω to 20 Ω. Detailed discussion and quantitative analysis are provided to explain the experimental results. In terms of the turn-on process, it is concluded that the R_dyn-ds,on variation is mainly caused by the different numbers of generated hot electrons. For the turn-off transient, it is confirmed the variation of drain current at different dv/dt slew rate leads to the R_dyn-ds,on difference.
关键词： switching transients,Dynamic on-resistance,GaN HEMTs,hot electrons
更新于2025-09-23 15:22:29
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An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
摘要： Gallium oxide (Ga2O3) is a new semiconductor material which has the advantage of ultrawide bandgap, high breakdown electric field, and large Baliga’s figure of merit (BFOM), so it is a promising candidate for the next-generation high-power devices including Schottky barrier diode (SBD). In this paper, the basic physical properties of Ga2O3 semiconductor have been analyzed. And the recent investigations on the Ga2O3-based SBD have been reviewed. Meanwhile, various methods for improving the performances including breakdown voltage and on-resistance have been summarized and compared. Finally, the prospect of Ga2O3-based SBD for power electronics application has been analyzed.
关键词： Breakdown electric field,Baliga’s figure of merit,On-resistance,Ultrawide bandgap semiconductor,Gallium oxide (Ga2O3),Power device,Schottky barrier diode (SBD)
更新于2025-09-23 15:22:29
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Ensuring Radiation Resistance of Fiber Optic Gyroscopes and Ways to Improve It
摘要： The problem of ensuring the radiation resistance of fiber-optic gyroscopes and their main components (optical fibers, elements of integrated optics, optical sources, electronic components and optical materials) is analyzed on the basis of Russian and foreign publications. Possible ways of radiation resistance improvement are considered.
关键词： fiber-optic gyro,radiation resistance,review
更新于2025-09-23 15:22:29
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Novel Gap Filling BARC with High Chemical Resistance
摘要： In the recent of the semiconductor manufacturing process, variety of properties (narrow gap-filling and planarity etc.) are required to organic BARC in addition to the conventional requirements. Moreover, SC-1 resistance is also needed because BARC is often used as a wet etching mask when TiN processing. But conventional BARC which include crosslinker does not have enough SC-1 resistance, and we found that it is also difficult to obtain good gap-filling and good planarity because of outgassing and film shrinkage derived from the crosslinker. In this study, we have developed the new self-crosslinking BARC. The new crosslinking system shows low outgassing and film shrinkage because of not including crosslinker. So, novel BARC has better gap filling property and planarity and over 3 times higher SC-1 resistance than that of conventional BARC. Moreover, by adding the low molecular weight additive which has high adhesive unit to TiN surface, the novel BARC has over 10 times higher SC-1 resistance than that of conventional BARC. And this novel BARC can be applied both ArF & KrF lithography process because of broad absorbance, high etching rate, chemical resistance (SC-1, SC-2, DHF, and others) and good film thickness uniformity. In this paper, we will discuss the detail of new self-crosslinking BARC in excellent total performance and our approach to achieve high chemical resistance.
关键词： KrF,ArF,Self-crosslinking,Gap filling,Planarity,Chemical resistance,BARC
更新于2025-09-23 15:22:29
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Semimetallicity and Negative Differential Resistance from Hybrid Halide Perovskite Nanowires
摘要： In the rapidly progressing field of organometal halide perovskites, the dimensional reduction can open up new opportunities for device applications. Herein, taking the recently synthesized trimethylsulfonium lead triiodide (CH3)3SPbI3 perovskite as a representative example, first-principles calculations are carried out and the nanostructuring and device application of halide perovskite nanowires are studied. It is found that the 1D (CH3)3SPbI3 structure is structurally stable, and the electronic structures of higher-dimensional forms are robustly determined at the 1D level. Remarkably, due to the face-sharing [PbI6] octahedral atomic structure, the organic ligand-removed 1D PbI3 frameworks are also found to be stable. Moreover, the PbI3 columns avoid the Peierls distortion and assume a semimetallic character, contradicting the conventional assumption of semiconducting metal-halogen inorganic frameworks. Adopting the bundled nanowire junctions consisting of (CH3)3SPbI3 channels with sub-5 nm dimensions sandwiched between PbI3 electrodes, high current densities and large room-temperature negative differential resistance (NDR) are finally obtained. It will be emphasized that the NDR originates from the combination of the near-Ohmic character of PbI3-(CH3)3SPbI3 contacts and a novel NDR mechanism that involves the quantum-mechanical hybridization between channel and electrode states. This work demonstrates the great potential of low-dimensional hybrid perovskites toward advanced electronic devices beyond actively pursued photonic applications.
关键词： semimetals,halide perovskite nanowires,first-principles calculations,negative differential resistance
更新于2025-09-23 15:22:29
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Light Metals 2014 (Grandfield/Light) || N-SiC Side Lining - Variations of Materials Structure
摘要： The key process in fabrication of Nitride bonded silicon carbide side lining of reduction pots is the reaction between Nitrogen and Silicon. Silicon may react with Nitrogen in solid, liquid and gaseous phase. The reaction is strongly exothermal. Almost all N-SiC refractory materials of more or less big shapes have the gradients of porosity from middle to the edges. The reason for these gradients may be the overheating of the middle part of shapes, compared to near surface layers, due to the exothermal effect and consequent increased concentration of volatile Silicon. Volatile Silicon tends to move to areas of lower temperature and the gradients of porosity are 1-2 %, but sometimes it may reach 5-7%. The problems with side lining of reduction pots may be because of the design of the pots, due to the overheating of the bath, yet the structure of N-SiC materials might be also critical.
关键词： corrosion resistance,side lining,N-SiC refractory
更新于2025-09-23 15:22:29
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Surface-enhanced Raman scattering method for the identification of methicillin-resistant Staphylococcus aureus using positively charged silver nanoparticles
摘要： The article describes a SERS-based method for diagnosis of bacterial infections. Positively charged silver nanoparticles (AgNPs+) were employed for identification of methicillin-resistant Staphylococcus aureus (MRSA). It is found that AgNPs+ undergo self-assembly on the surface of bacteria via electrostatic aggregation. The assembled AgNPs+ are excellent SERS substrates. To prove the capability of SERS to differentiate between S. aureus and other microorganisms, six standard strains including S. aureus 29213, S. aureus 25923, C. albicans, B. cereus, E. coli, and P. aeruginosa were tested. To further demonstrate its applicability for the identification of MRSA in clinical samples, 52 methicillin-sensitive S. aureus (MSSA) isolates and 215 MRSA isolates were detected by SERS. The total measurement time (include incubation) is 45 min when using a 3 μL sample. The method gives a strongly enhanced Raman signal (at 730 cm?1 and 1325 cm?1) with good reproducibility and repeatability. It was successfully applied to the discrimination of the six strain microorganisms. The typical Raman peaks of S. aureus at 730, 1154, 1325, and 1457 cm?1 were observed, which were assigned to the bacterial cell wall components (730 cm?1- adenine, glycosidic ring mode, 1154 cm?1- unsaturated fatty acid, 1325 cm?1- adenine, polyadenine, and 1457 cm?1 for -COO- stretching). S. aureus was completely separated from other species by partial least squares discriminant analysis (PLS-DA). Moreover, 52 MSSA isolates and 215 MRSA isolates from clinical samples were identified by PLS-DA. The accuracy was almost 100% when compared to the standard broth microdilution method. A classification based on latent structure discriminant analysis provided spectral variability directly. Conceivably, the method offers a potent tool for the identification of bacteria and antibiotics resistance, and for studies on antibiotic-resistance in general.
关键词： S. aureus,Nanoparticles,Methicillin resistance,Antibiotics,Latent structure discriminant analysis classification (OPLS-DA),SERS,Partial least squares discriminant analysis (PLS-DA),AgNPs,Discriminant analysis,Raman spectroscopy
更新于2025-09-23 15:22:29
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Synergistic effect of Ag and ZnO nanoparticles on polyaniline incorporated epoxy/2pack coatings for splash zone applications
摘要： In this work, epoxy/2pack coatings containing polyaniline (PANI) in combination with Ag and ZnO nanoparticles have been synthesized. The nanoparticles were incorporated with bisphenol-A diglycidyl ether epoxy resin and polyamino-amide. The mechanical properties of the fabricated coatings, such as the pendulum hardness, scratch resistance, and impact strength, were studied. The composition of the fabricated coatings was confirmed by attenuated total reflectance infrared spectroscopy measurements. The thermal degradation and indentations were characterized through the use of differential scanning calorimetry and nano-indentation techniques, respectively. The surface morphology of the fabricated coatings was characterized using field-emission scanning electron microscopy. The synergistic effects of the Ag and ZnO nanoparticles on the corrosion resistance of the coatings after different exposure periods in 3.5% NaCl solutions were determined by electrochemical impedance spectroscopy. All the results were consistent with one another and confirmed that the addition of Ag and ZnO nanoparticles improved the mechanical properties of the coatings. This effect also led to a notable increase in the corrosion resistance of the PANI coatings.
关键词： Nanoparticles,Polyaniline,Nano-indentation,Corrosion resistance,Epoxy coatings,Surface morphology
更新于2025-09-23 15:22:29