研究目的
To analyze the basic physical properties of Ga2O3 semiconductor, review recent investigations on Ga2O3-based SBDs, summarize methods for improving performance parameters like breakdown voltage and on-resistance, and analyze the prospects for power electronics applications.
研究成果
Ga2O3 SBDs show promise for power electronics due to their ultrawide bandgap and high breakdown field, but are still in early development. Future efforts are needed to improve material properties and device structures to fully realize their potential.
研究不足
The paper is a review and does not conduct new experiments, so it relies on the limitations of the cited studies, such as challenges in p-type doping, low thermal conductivity, and low carrier mobility of Ga2O3, as well as the early stage of device development.
