研究目的
To develop a novel self-crosslinking Bottom Anti-Reflective Coating (BARC) with improved gap-filling properties, planarity, and high chemical resistance (specifically SC-1 resistance) for use in advanced semiconductor manufacturing processes, particularly for implant layers and High-K/Metal Gate (HKMG) processes.
研究成果
The novel self-crosslinking BARC, enhanced with a specific additive, demonstrates superior gap-filling properties in narrow trenches (<10 nm), high SC-1 resistance (over 16 times higher than conventional BARC), and compatibility with multiple lithography processes (KrF, ArF, ArFi). It achieves this through a new crosslinking system that minimizes outgassing and film shrinkage, and an additive that improves adhesion to TiN surfaces. This BARC is suitable for advanced semiconductor nodes, potentially improving process throughput and device performance. Future work could focus on optimizing the additive concentration and exploring applications in other chemical environments.
研究不足
The study is limited to laboratory-scale experiments; scalability to industrial semiconductor manufacturing processes may require further validation. The new BARC's performance under all possible process variations and long-term stability were not extensively tested. The additive's coordination mechanism on TiN surface, while inferred, may need more direct evidence.
1：Experimental Design and Method Selection:
The study focused on designing a new self-crosslinking BARC system without conventional crosslinkers to reduce outgassing and film shrinkage. A polyester-type base polymer was selected for high etch rate, with specific units for adhesion, flexibility, and chromophore inclusion for broad absorbance. A new catalyst was identified to enable crosslinking at lower temperatures.
2：Sample Selection and Data Sources:
Samples were prepared using thermal crosslink materials, including base polymers and additives. Solvents like PGME and PGMEA were used. BARC films were coated on various substrates (e.g., silicon wafers, TiN wafers, narrow trench substrates) for different tests.
3：List of Experimental Equipment and Materials:
Equipment included spin coaters, hotplates for baking, IR measurement tools (Nicolet iS50), film thickness measurement tools (Nanospec AFT6100), cross-section SEM (Hitachi S4800), ellipsometer (VUV-VASE32), and etching tools (RIE-10NR). Materials included polymers, additives, solvents, and specific wafers (e.g., TiN, SiO2).
4：2).
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: BARC films were prepared by spin-coating at 1500 rpm for 60 seconds and baking at 250°C for 60 seconds. IR measurements assessed crosslinking reaction speeds. Stripping tests evaluated solvent resistance. Gap filling was checked on narrow trench substrates using SEM. Chemical resistance was tested by soaking in SC-1 solution and measuring film peeling time. Etching rates were measured using N2 gas etching. Optical parameters (n and k values) were measured with ellipsometry. Lithography tests were performed with KrF, ArF, and ArFi exposure tools and corresponding resists.
5：Data Analysis Methods:
Data analysis involved comparing film thickness changes for stripping and etching tests, observing SEM images for gap filling, and using IR spectra to monitor crosslinking. Statistical comparisons were made between new and conventional BARC samples.
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