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Study of the Effect of Optical Illumination on Resistive Switching in ZrO2(Y) Films with Au Nanoparticles by Tunneling Atomic Force Microscopy
摘要： The effect of optical illumination on the resistive switching in ultrathin (~4 nm) ZrO2(Y) films with embedded single-layer Au nanoparticle arrays 2–3 nm in size is studied via tunneling atomic force microscopy. The ZrO2(Y) films with Au nanoparticles are grown by layerwise magnetron deposition onto glass substrates with a conductive indium-tin-oxide sublayer, followed by annealing at 450°C. An increase in hysteresis due to bipolar resistive switching in the ZrO2(Y) films is observed on the cyclic current–voltage curves of the microscope probe-to-sample contact. The effect is found to manifest itself in a dense Au nanoparticle array (~660 nm) when the contact area is photoexcited through a transparent substrate exposed to the radiation of a semiconductor laser at the plasmon-resonance wavelength. The effect is attributed to the photon-assisted field emission of electrons from Au nanoparticles to the conduction band of ZrO2(Y) in a strong electric field between the microscope probe and the indium-tin-oxide substrate under plasmon-resonance conditions.
关键词： plasmon resonance,resistive switching,yttrium-stabilized zirconium dioxide,metal nanoparticles,atomic force microscopy
更新于2025-11-19 16:56:35
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Engineering Oxygen Migration for Homogeneous Volume Resistive Switching in 3‐Terminal Devices
摘要： Resistive switching effects are in a superb position to tackle the challenges for the near future of nanoelectronics and neuromorphics. Material-wise, the outstanding properties of strongly correlated metallic perovskite oxides, in particular, those displaying metal–insulator transition can be exploited for a new generation of devices based on a volume resistive switching (VRS) phenomenon beyond filamentary and interface ideas. This study reports a full description of this new and robust physical mechanism governing VRS memory effects in mixed-valence mixed-conductor metallic La1?xSrxMnO3?y perovskites by identifying the role and rate limiting steps of oxygen exchange through oxygen partial pressure experiments. It is demonstrated that oxygen migration can be smartly engineered by introducing a CeO2?x capping layer, which is further used to validate the VRS phenomenon by operating a nonvolatile and volumetric proof-of-concept gate-controlled three-terminal conductive bridge device.
关键词： strongly correlated systems,oxygen exchange,nanoelectronics,resistive switching
更新于2025-11-14 17:03:37
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Turning electrical switching behaviors in WO <sub/><i>x</i> </sub> thin films by thickness
摘要： The tunability of electrical switching behaviors in WOx thin films were investigated in this paper. Electrical responses of the WOx films were observed to be highly sensitive to the film thickness. As the film thickness increases from 50 to 100 nm, the switching behavior changes from complementary resistive switching (CRS) to threshold switching (TS). A defect-related dynamic evolution of filament is responsible for the switching behavior. Such a controllable electrical switching can well broaden the application of the WOx thin film.
关键词： threshold switching,WOx thin film,Electrical switching behavior,turning,complementary resistive switching
更新于2025-09-23 15:23:52
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Insertion of Nanoscale AgInSbTe Layer between the Ag Electrode and the CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> Electrolyte Layer Enabling Enhanced Multilevel Memory
摘要： Hybrid organic-inorganic perovskite, CH3NH3PbI3 (MAPbI3) has attracted great attention as promising building blocks for resistive switching memory. However, the reproductive switching uniformity and long-term environmental stability are always critical issues for practical application. Herein, by inserting nanoscale AgInSbTe (AIST) layer between the Ag electrode and MAPbI3 electrolyte layer (Ag/AIST/MAPbI3/FTO), the switching uniformity and environmental stability of the memory cell can be greatly improved. The suppression of excess Ag ions injection and the protection of MAPbI3 form air exposure with the help of AIST layer are ascribed to be responsible for the above-mentioned characteristics, respectively. Moreover, controllable tri-state switching in the reset process provided the capability of multilevel storage of the memory cells and the related mechanism has been identified as the control of nanoscale conductive filaments rupture in sequence from AIST to MAPbI3 layer. The present work would offer an effective way to develop high uniform and environmental stable MAPbI3-based high density memory systems.
关键词： AgInSbTe,stability,CH3NH3PbI3,uniformity,resistive switching
更新于2025-09-23 15:23:52
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Electroresistance of Pt/BaTiO<sub>3</sub>/LaNiO<sub>3</sub> ferroelectric tunnel junctions and its dependence on BaTiO<sub>3</sub> thickness
摘要： Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention due to their great potential in next generation non-volatile memories. In this work, we report on thickness-dependent tunneling electroresistance (TER) and corresponding evolution of transport behavior in Pt/BaTiO3/LaNiO3 FTJs with various BaTiO3 thicknesses of 2.0, 3.2, and 4.8 nm. The TER effect is observed in the 3.2 nm-thick Pt/BaTiO3/LaNiO3 tunnel junction and an ON/OFF current ratio of ~170 is achieved due to the modulation of barrier height by polarization reversal. When the BaTiO3 is increased to 4.8 nm in thickness, the ferroelectric-modulation of the barrier profile becomes more pronounced and the dominant transport mechanism changes from electron tunneling to thermally-activated thermionic injection. As a result, the OFF state current is significantly reduced due to the suppression of the Fowler-Nordheim tunneling with increased width and height of the BaTiO3 barrier. A greatly improved ON/OFF current ratio of ~12500 is thus achieved in the 4.8 nm-thick Pt/BaTiO3/LaNiO3 FTJ device. These results facilitate deeper understanding of the TER effects from the viewpoint of not only the barrier profile but also the transport mechanism.
关键词： Pulsed laser deposition,Ferroelectric tunnel junctions,Ferroelectric memory,Resistive switching
更新于2025-09-23 15:23:52
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Morphological regulation of all-inorganic perovskites for multilevel resistive switching
摘要： Enormous attention has been paid to all-inorganic cesium lead halide perovskites in various photoelectronic fields for their remarkable performances. However, comparing to their analogue organic-inorganic hybrid perovskites, the film morphology of such all-inorganic lead halide perovskites is difficult to control due to the low solubility of cesium salt. Here, we propose a new fabrication routine to control the film morphology of CsPbBr3. A series of CsPbBr3 thin films with big grains (≈800 nm) were successfully prepared. The memristors based on such CsPbBr3 thin films take on typical bipolar resistive switching behavior and remarkable characteristics such as high Ron/Roff ratio (≈105), very low working voltage (≈ ± 1 V), and long data retention (≥104 s). Furthermore, through modulating the film morphology, memristors with multilevel resistive switching behavior can be easily prepared. These advantages demonstrate that the all-inorganic cesium lead halide memristors possess great potential for future application.
关键词： Memristor,Morphological regulation,Multilevel resistive switching,All-inorganic perovskite
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP) - Hiroshima (2018.5.27-2018.6.1)] 2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP) - Control of Leakage Current through BaTiO<inf>3</inf> Film by Cumulative Cycle of Applied Voltage Scanning for ReRAM or Neuromorphic Application
摘要： We found a new phenomenon that shows a large change in leakage current through BaTiO3 (BTO) film with the maximum ratio of 107 to 109 observed in this work by changing cumulative cycle of voltage scan applied on the film capacitor. These leakage phenomena are thought to depend on several factors such as BTO film thickness, concentration of Vo+, bias voltage, its sweep rate and so on, because trapping/detrapping of carrier electron into/from oxygen vacancy would be a competition dependent on their rates and concentrations. These results imply that the leakage current can be controlled by some sequences or protocols of applied voltage scan, leading to use for ReRAM or neuromorphic applications.
关键词： ReRAM,leakage current,resistive switching,BaTiO3,oxygen vacancy
更新于2025-09-23 15:23:52
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Solution-Processable ZnO Thin Film Memristive Device for Resistive Random Access Memory Application
摘要： The memristive device is a fourth fundamental circuit element with inherent memory, nonlinearity, and passivity properties. Herein, we report on a cost-effective and rapidly produced ZnO thin film memristive device using the doctor blade method. The active layer of the developed device (ZnO) was composed of compact microrods. Furthermore, ZnO microrods were well spread horizontally and covered the entire surface of the fluorine-doped tin oxide substrate. X-ray diffraction (XRD) results confirmed that the synthesized ZnO was oriented along the c-axis and possessed a hexagonal crystal structure. The device showed bipolar resistive switching characteristics and required a very low resistive switching voltage (±0.8 V) for its operation. Two distinct and well-resolved resistance states with a remarkable 103 memory window were achieved at 0.2-V read voltage. The developed device switched successfully in consecutive 102 switching cycles and was stable over 102 seconds without any observable degradation in the resistive switching states. In addition to this, the charge–magnetic flux curve was observed to be a single-valued function at a higher magnitude of the flux and became double valued at a lower magnitude of the flux. The conduction mechanism of the ZnO thin film memristive device followed the space charge limited current, and resistive switching was due to the filamentary resistive switching effect.
关键词： memristive device,doctor blade method,ZnO,resistive switching
更新于2025-09-23 15:23:52
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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
摘要： The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
关键词： space-charge-limited conduction,bipolar resistive switching,BiFeO3 films,sputter
更新于2025-09-23 15:22:29
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High performance and mechanism of the resistive switching device based on lead halide thin films
摘要： In this work, the lead halide was firstly applied in resistive random-access memory (RRAM) device with the structure of W/lead iodide/fluorine-doped tin oxide (FTO). The mechanism was investigated by reliable data fitting and the experiment of temperature influence, illustrating that the resistive switching phenomenon was origin from the filament. The iodide vacancies were considered as the main composition of the conductive filaments, which was verified by the first principle calculation and experimental verification. These performances were also found in device fabricated by other lead halide, such as PbBr2 and PbCl2. Moreover, they performed great potential as the non-volatile memory due to the excellent resistive switching properties. This work was of great significance for the expansion of RRAM material system.
关键词： conductive filaments,lead halide,resistive switching memory,first principle calculation
更新于2025-09-23 15:22:29