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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • Schottky diodes
  • frequency multipliers
  • submillimeter-wave technology
  • terahertz technology.
  • Submillimeter-wave sources
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • California Institute of Technology
167 条数据
?? 中文（中国） ▾

  • A supramolecular Cd( <scp>ii</scp> )-metallogel: an efficient semiconductive electronic device

    摘要： A sonication-based strategy for the synthesis of a functional supramolecular Cd(II)-metallogel (CdA-OX) has been achieved through mixing cadmium(II) acetate dihydrate and oxalic acid dihydrate, a low molecular weight gelator (LMWG), in N,N-dimethyl formamide solvent at room temperature under atmospheric pressure. The mechanical properties of the supramolecular Cd(II)-metallogel were investigated through a rheological study. The pebble-like self-assembly hierarchical architecture of the supramolecular metallohydrogel was visualized through field emission scanning electron microscopy investigations. The electrical properties of the metallogel were thoroughly examined and indicate its semiconducting nature. Based on its conducting properties, the Cd(II)-metallogel was successfully applied to a Schottky barrier diode. Overall, this work is a novel instance of technologically challenging electronic device application of a Cd(II)-metallogel.

    关键词： Schottky barrier diode,supramolecular Cd(II)-metallogel,sonication-based synthesis,electronic device,semiconducting nature

    更新于2025-11-21 11:18:25

  • Synthesis, Morphology, Optical and Electrical Properties of Cu <sub/> 1? <i>x</i> </sub> Fe <sub/><i>x</i> </sub> O Nanopowder

    摘要： The pure and Fe-doped CuO nanoparticles of the series Cu1?xFexO (x = 0, 0.027, 0.055, 0.097 and 0.125) were synthesized by a simple low temperature sol–gel method. Synthesized samples were characterized by a series of techniques including Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive X-ray electron spectroscopy (EDX), Diffuse Reflectance Spectroscopy (DRS), Fourier Transform Infrared Spectroscopy (FTIR), Hall Effect Set-up and Current–Voltage (I–V) characteristics. FESEM analysis shows formation of disc type structure increasing in grain size with Fe concentration in CuO. EDX confirmed the incorporation of iron in CuO. FTIR results of pure and Fe doped CuO samples have confirmed the formation of monoclinic CuO. The optical band gap estimated using Diffuse Reflectance Spectroscopy (DRS) shows the increment in the band gap values with Fe substitution. The Hall measurements show predominantly p-type conduction in all the samples and carrier densities decrease with increased Fe substitution. I–V characteristics of pure and Fe doped CuO nanoparticles show rectification behaviour of Schottky diodes.

    关键词： Defect States,Hall Effect,Schottky Diode,Cation Vacancies,Fe-Substituted CuO

    更新于2025-11-19 16:56:35

  • Thinning ferroelectric films for high-efficiency photovoltaics based on the Schottky barrier effect

    摘要： Achieving high power conversion efficiencies (PCEs) in ferroelectric photovoltaics (PVs) is a longstanding challenge. Although recently ferroelectric thick films, composite films, and bulk crystals have all been demonstrated to exhibit PCEs >1%, these systems still suffer from severe recombination because of the fundamentally low conductivities of ferroelectrics. Further improvement of PCEs may therefore rely on thickness reduction if the reduced recombination could overcompensate for the loss in light absorption. Here, a PCE of up to 2.49% (under 365-nm ultraviolet illumination) was demonstrated in a 12-nm Pb(Zr0.2Ti0.8)O3 (PZT) ultrathin film. The strategy to realize such a high PCE consists of reducing the film thickness to be comparable with the depletion width, which can simultaneously suppress recombination and lower the series resistance. The basis of our strategy lies in the fact that the PV effect originates from the interfacial Schottky barriers, which is revealed by measuring and modeling the thickness-dependent PV characteristics. In addition, the Schottky barrier parameters (particularly the depletion width) are evaluated by investigating the thickness-dependent ferroelectric, dielectric and conduction properties. Our study therefore provides an effective strategy to obtain high-efficiency ferroelectric PVs and demonstrates the great potential of ferroelectrics for use in ultrathin-film PV devices.

    关键词： power conversion efficiency,Schottky barrier effect,ferroelectric photovoltaics,PZT ultrathin film,depletion width

    更新于2025-11-14 17:28:48

  • Switchable Schottky contacts: Simultaneously enhanced output current and reduced leakage current

    摘要： Metal-semiconductor contacts are key components of nanoelectronics and atomic-scale integrated circuits. In these components Schottky diodes provide a low forward voltage and a very fast switching rate but suffer the drawback of a high reverse leakage current. Improvement of the reverse bias characteristics without degrading performance of the diode at positive voltages is deemed physically impossible for conventional silicon-based Schottky diodes. However, in this work we propose that this design challenge can be overcome in the organic-based diodes by utilizing reversible transitions between distinct adsorption states of organic molecules on metal surfaces. Motivated by previous experimental observations of controllable adsorption conformations of anthradithiophene on Cu(111), herein we use density functional theory simulations to demonstrate the distinct Schottky barrier heights of the two adsorption states. The higher Schottky barrier of the reverse bias induced by chemisorbed state results in low leakage current; while the lower barrier of the forward bias induced by physisorbed state yields a larger output current. The rectifying behaviors are further supported by nonequilibrium Green's function transport calculations.

    关键词： van der Waals forces,Schottky contacts,Schottky barrier height,reverse leakage current,bistable state

    更新于2025-09-23 15:23:52

  • High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications

    摘要： The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical electric field of 800 kV/cm. This value, which is 2 to 3 times higher than in monocrystalline silicon, was derived from a vertical Schottky diode application of columnar-structured ZnO films electrodeposited on platinum. The device exhibited a free carrier concentration of 2.5 × 10^15 cm^-3, a rectification ratio of 3 × 10^8 and an ideality factor of 1.10, a value uncommonly obtained in solution-processed ZnO. High breakdown strength and high thickness capability make this environment-friendly process a serious option for power electronics and energy-harvesting.

    关键词： breakdown voltage,electrodeposition,zinc oxide,critical electric field,solution-processed,Schottky diode,power diode,ideality factor

    更新于2025-09-23 15:23:52

  • Temperature-Dependent Electrical Characteristics of β-Ga <sub/>2</sub> O <sub/>3</sub> Diodes with W Schottky Contacts up to 500°C

    摘要： The development of thermally stable contacts capable of high temperature operation are necessary for Ga2O3 high power rectifiers. We have measured the electrical characteristics of sputter-deposited W Schottky contacts with Au overlayers for reducing sheet resistance on n-type Ga2O3 before and after device operation up to 500°C. Assuming thermionic emission is dominant, the extracted barrier height decreases with measurement temperature from 0.97 eV (25°C) to 0.39 eV (500°C) while showing little change from its initial value of 0.97 eV after cooling down from each respective operation temperature. The room temperature value is comparable to that obtained by determining the energy difference between binding energy of the Ga 3d core level and the valence band of the Ga2O3 when W is present, 0.80 ± 0.2 eV in this case. The Richardson constant was 54.05 A.cm?2.K?2 for W and the effective Schottky barrier height at zero bias (eφb0) was 0.92 eV from temperature-dependent current-voltage characteristics. The temperature coefficient for reverse breakdown voltage was 0.16 V/K for W/Au and 0.12 V/K for Ni/Au. The W-based contacts are more thermally stable than conventional Ni-based Schottkies on Ga2O3 but do show evidence of Ga migration through the contact after 500°C device operation.

    关键词： electrical characteristics,thermal stability,high temperature operation,Ga2O3,Schottky contacts

    更新于2025-09-23 15:23:52

  • The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range

    摘要： The reverse and forward bias I-V characteristics of the Al/p-YMO/p-Si/Al heterojunction were measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the I-V curves showed Schottky diode-like characteristics. The ideality factor and barrier height values were calculated as 0.81 and 2.62 from the forward bias I-V curve at room temperature (300 K), respectively. The YMO powder was prepared via solid state reaction technique. YMO thin films were grown on front surface of p-Si substrate by radio frequency (rf) magnetron sputtering using a polycrystalline YMO single target. The YMO thin film thickness on Si substrate was measured as ~70 nm via Dektak XT surface profilometer. The XRD, SEM, UV-Vis and XPS measurements of the YMO thin film were also performed. The bandgap energy of YMnO3 thin films was determined as 2.10 eV by UV-vis. The temperature-dependent reverse and forward bias I-V curves were evaluated in terms of thermionic emission (TE), Schottky emission, Fowler-Nordheim (F-N) tunneling and space charge-limited current (SCLC) current theories. Furthermore, it has been seen that the forward bias conduction in the junction at each temperature obeys F-N tunneling because of the linearity in the ln (I/V2) versus V-1 curves.

    关键词： Polycrystalline,Heterojunction,Ferroelectric,Al/p-YMO/p-Si/Al,Schottky barrier,YMnO3,Temperature dependent current characteristics

    更新于2025-09-23 15:23:52

  • 2D Schottky Junction between Graphene Oxide and Transition-Metal Dichalcogenides: Photoresponsive Properties and Electrocatalytic Performance

    摘要： 2D graphene is conductor and not a semiconductor. 2D transition—metal dichalcogenides (TMD) is a semiconductor and not a conductor. Preparing 2D composite material that simultaneously possesses both advantages of graphene and TMD has proven to be challenging. In this work, both 2D-WS2/2D-GO and 2D-MoS2/2D-GO composites with few layer thickness are synthesized. The electronic structure indicates a high content of Mo4+ 3d5/2 and W4+4f7/2 with lower binding energy in the 2D composite, which is ascribed to partial loss of surface sulfur atoms in 2D composites and the newly formed heteroatomic bond of CWS and CMoS. The Schottky junction between 2D-GO and 2D-TMD (2D G-T junction) is established and exhibits obvious photoelectric responses. Superior electrocatalytic properties of the two 2D-composites are attributable to the 2D Schottky Junction between 2D-TMDs and 2D-GO. Interlayer electronic coupling in 2D Schottky Junction (2D G-T junction) activates inert sites on the 2D surface of 2D-TMDs or GO. The power conversion efficiency of dye-sensitized solar cells (DSCs) based on 2D-WS2/2D-GO is 9.54% under standard solar illumination intensity (AM1.5, 100 mW cm?2). The value is one of the highest reported efficiencies for DSCs based on Pt-free counter electrodes. Finally, 2D-WS2/2D-GO composites exhibit excellent stability as counter electrode of DSCs.

    关键词： photoresponse,interlayer electronic coupling,2D,electrocatalyst,graphene,transition-metal dichalcogenides,Schottky junction

    更新于2025-09-23 15:23:52

  • Influence of Cr doping on Schottky barrier height and visible light detection of ZnO thin films deposited by magnetron sputtering

    摘要： A comparative study of the electrical and photodetection properties of ZnO and Cr doped ZnO thin films are being reported here. The films were deposited using magnetron sputtering. X-ray diffraction (XRD) revealed hexagonal crystal structure of the films with (002) preferred orientation. Pt/ZnO/Pt and Pt/Cr doped ZnO/Pt Schottky diodes were fabricated for photodetection studies. The Schottky barrier height was lowered for Cr doped ZnO film as compared to ZnO film. The ideality factor was improved upon Cr doping. Pt/ZnO/Pt diode was unresponsive to visible light, however, Pt/Cr doped ZnO/Pt diode showed response to visible light with short response and recovery times. The response of the Pt/Cr doped ZnO/Pt diodes to visible light is attributed to the reduction in band gap of the Cr doped ZnO thin film.

    关键词： Thin films,Schottky contact,Chromium-doped Zinc oxide,Sputtering,Photodetectors

    更新于2025-09-23 15:23:52

  • Influence of GaN- and Si?N?-Passivation Layers on the Performance of AlGaN/GaN Diodes With a Gated Edge Termination

    摘要： This paper analyses the influence of the GaN and Si3N4 passivation (or 'cap') layer on the top of the AlGaN barrier layer on the performance and reliability of Schottky barrier diodes with a gated edge termination (GET-SBDs). Both GaN cap and Si3N4 cap devices show similar dc characteristics but a higher density of traps at the SiO2/GaN interface or/and an increase of the total dielectric constant in the access region result in higher RON-dispersion in GaN cap devices. The leakage current at medium/low temperatures in both types of devices shows two low-voltage-independent activation energies, suggesting thermionic and field-emission processes to be responsible for the conduction. Furthermore, a voltage-dependent activation energy in the high-temperature range occurs from low voltages in the GaN cap devices and limits their breakdown voltage (VBD). Time-dependent dielectric breakdown measurements show a tighter distribution in Si3N4 cap devices (Weibull slope β = 3.3) compared to GaN cap devices (β = 1.8). Additional measurements in plasma-enhanced atomic layer deposition (PEALD)-Si3N4 capacitors with different cap layers and TCAD simulations show an electric field distribution with a strong peak within the PEALD-Si3N4 dielectric at the GET corner, which could accelerate the formation of a percolation path and provoke the device breakdown in GaN cap SBDs even at low-stress voltages.

    关键词： Si3N4 cap,GaN cap,AlGaN/GaN Schottky diode,reliability,breakdown voltage,passivation layer,off-state,Activation energy

    更新于2025-09-23 15:23:52