摘要： Achieving high power conversion efficiencies (PCEs) in ferroelectric photovoltaics (PVs) is a longstanding challenge. Although recently ferroelectric thick films, composite films, and bulk crystals have all been demonstrated to exhibit PCEs >1%, these systems still suffer from severe recombination because of the fundamentally low conductivities of ferroelectrics. Further improvement of PCEs may therefore rely on thickness reduction if the reduced recombination could overcompensate for the loss in light absorption. Here, a PCE of up to 2.49% (under 365-nm ultraviolet illumination) was demonstrated in a 12-nm Pb(Zr0.2Ti0.8)O3 (PZT) ultrathin film. The strategy to realize such a high PCE consists of reducing the film thickness to be comparable with the depletion width, which can simultaneously suppress recombination and lower the series resistance. The basis of our strategy lies in the fact that the PV effect originates from the interfacial Schottky barriers, which is revealed by measuring and modeling the thickness-dependent PV characteristics. In addition, the Schottky barrier parameters (particularly the depletion width) are evaluated by investigating the thickness-dependent ferroelectric, dielectric and conduction properties. Our study therefore provides an effective strategy to obtain high-efficiency ferroelectric PVs and demonstrates the great potential of ferroelectrics for use in ultrathin-film PV devices.