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Graphene-Nanowalls/Silicon Hybrid Heterojunction Photodetectors
摘要： We study and fabricate graphene nanowalls /silicon hybrid heterojunction photoconductive detector to provide process technology of the device and theoretical foundation for the purpose of preparation of high-performance photodetectors. The graphene nanowalls (GNWs) film is patterned by double-layered photoresist-based photolithography and reactive ion etching (RIE) process to achieve high quality GNWs channel and fabricate three different GNWs/Si heterojunction photoconductive detectors with n-doped, intrinsic and p-doped silicon substrates (n-Si, i-Si, p-Si), respectively. The GNWs film not only acts as a photoconductive channel for carrier transport, but also constructs a Schottky heterojunction with the silicon to participate in the separation and transport of photogenerated carriers. Since the injection of holes needs to pass through the Schottky junction region, the height of the Schottky barrier determines the injection ability of photogenerated carriers, which directly affects the photoconductive gain of the GNWs and silicon. In addition, under low bias VDS, the GNWs/n-Si photoresponse current is maximum and the GNWs/p-Si photoresponse current is minimum. The photoresponse is attributed to the barrier heights of the GNWs/n-Si, GNWs/i-Si, and GNWs/p-Si with values of 0.73 eV, 0.69 eV, and 0.63 eV, respectively. The higher the barrier, the more the number of photogenerated carriers injected into the GNWs will be, and the photoresponse current is large as well.
关键词： photoresponse,Schottky barrier,photoconductive,graphene nanowalls
更新于2025-09-23 15:19:57
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The influence of electrode for electroluminescence devices based on all-inorganic halide perovskite CsPbBr<sub>3</sub>
摘要： Electroluminescence devices based all-inorganic halide perovskite material with the excellent luminescence performance have been studied extensively in recent years. However, the important role for the electrodes of electroluminescence devices is payed few attention by theoretical and experimental studies. Appropriate electrodes can reduce the Schottky barrier height to decrease the energy loss, and prevent the metal impurities from diffusing into the perovskite material to generate deep traps levels, which improves the luminous efficiency and lifetime of devices. In this paper, not only the interface effects between CsPbBr3 and common metal electrode (Ag, Au, Ni, Cu and Pt) are studied by first-principle calculations, but also the diffusion effects of metal electrode atom into the CsPbBr3 layer are also explored by nudged elastic band calculations. The calculated results show the metal Ag is more suitable for the cathode for CsPbBr3 electroluminescence devices, while the metal Pt is more applicable for the anode. Based on the overall consideration about the interface effects and diffusion effects of the CsPbBr3-metal electrode junctions, the essential principle provide a valuable reference how to select the suitable electrodes for other electroluminescence devices.
关键词： electroluminescence devices,diffusion effects,Schottky barrier height,CsPbBr3,all-inorganic halide perovskite,metal electrodes
更新于2025-09-23 15:19:57
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Synergistic enhancement in the microelectronic properties of poly-(dioctylfluorene) based Schottky devices by CdSe quantum dots
摘要： This paper reports the potential application of cadmium selenide (CdSe) quantum dots (QDs) in improving the microelectronic characteristics of Schottky barrier diode (SBD) prepared from a semiconducting material poly-(9,9-dioctylfluorene) (F8). Two SBDs, Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO, are fabricated by spin coating a 10 wt% solution of F8 in chloroform and 10:1 wt% solution of F8:CdSe QDs, respectively, on a pre-deposited poly(3-hexylthiophene) (P3HT) on indium tin oxide (ITO) substrate. To study the electronic properties of the fabricated devices, current-voltage (I–V) measurements are carried out at 25 °C in dark conditions. The I–V curves of Ag/F8/P3HT/ITO and Ag/F8-CdSe QDs/P3HT/ITO SBDs demonstrate asymmetrical behavior with forward bias current rectification ratio (RR) of 7.42 ± 0.02 and 142 ± 0.02, respectively, at ± 3.5 V which confirm the formation of depletion region. Other key parameters which govern microelectronic properties of the fabricated devices such as charge carrier mobility (μ), barrier height (φb), series resistance (Rs) and quality factor (n) are extracted from their corresponding I–V characteristics. Norde’s and Cheung functions are also applied to characterize the devices to study consistency in various parameters. Significant improvement is found in the values of Rs, n, and RR by 3, 1.7, and 19 times, respectively, for Ag/F8-CdSe QDs/P3HT/ITO SBD as compared to Ag/F8/P3HT/ITO. This enhancement is due to the incorporation of CdSe QDs having 3-dimensional quantum confinement and large surface-to-volume area. Poole-Frenkle and Richardson-Schottky conduction mechanisms are also discussed for both of the devices. Morphology, optical bandgap (1.88 ± 0.5 eV) and photoluminescence (PL) spectrum of CdSe QDs with a peak intensity at 556 nm are also reported and discussed.
关键词： poly-(9,9-dioctylfluorene),charge carrier mobility,Schottky barrier diode,microelectronic properties,CdSe quantum dots
更新于2025-09-23 15:19:57
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Interfacial Band Engineering of MoS <sub/>2</sub> /Gold Interfaces Using Pyrimidine-Containing Self-Assembled Monolayers: Toward Contact-Resistance-Free Bottom-Contacts
摘要： Bottom-contact architectures with common electrode materials such as gold are crucial for the integration of 2D semiconductors into existing device concepts. The high contact resistance to gold—especially for bottom contacts—is, however, a general problem in 2D semiconductor thin-film transistors. Pyrimidine-containing self-assembled monolayers on gold electrodes are investigated for tuning the electrode work functions in order to minimize that contact resistance. Their frequently ignored asymmetric and bias-dependent nature is recorded by Kelvin probe force microscopy through a direct mapping of the potential drop across the channel during device operation. A reduction of the contact resistances exceeding two orders of magnitude is achieved via a suitable self-assembled monolayer, which vastly improves the overall device performance.
关键词： work-function engineering,MoS2,thin-film transistors,self-assembled monolayers,Schottky barrier
更新于2025-09-23 15:19:57
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The mechanism of filament formation in Ag doped Ge–Se resistive switching cell
摘要： The AgGeSe2 solid state electrolyte has been studied in resistive switching. According to the I–V relationship, the possible mechanisms, including the SCLC (space-charge-limited current) model is applied to explain the result of experiments. The conductive filament formation is found to be related to the Schottky barrier between the electrode and electrolyte.
关键词： Schottky barrier,AgGeSe2,conductive filament,SCLC model,resistive switching
更新于2025-09-23 15:19:57
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Electrical characterization of two analogous Schottky contacts produced from <i>N</i> -substituted 1,8-naphthalimide
摘要： The aim of this study was to analyze the interface states (Nss) in pure Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes (SBDs). N-Substituted 1,8-naphthalimide thin films were deposited on a p-Si substrate by spin coating and annealed at B200 1C for 60 s under an air atmosphere. Al contacts were obtained via reactive magnetron sputtering. The current voltage (I–V) characteristics of the SBDs were measured at room temperature. From the I–V characteristics, the SBDs ideality factor (n) and zero-bias barrier height values (Fb) of 1.27, 1.00, and 1.05 and 0.66 eV, 0.70 eV, and 0.64 eV were observed for the Al//p-Si/Al, Al/N-F Nft/p-Si/Al and Al/N-T Nft/p-Si/Al Schottky barrier diodes, respectively. The interface state density distribution profile (Nss) as a function of (Ess–Ev) was extracted from the forward-bias I–V measurements by considering the effective barrier height and (Fe) and series resistance (Rs) of the Schottky diode. The obtained Nss plot tendency showed that the existence of interface states has no significant effect on the rectifying and capacitance characteristics. The Nss values with the 1,8-naphthalimide layer were lower than that without it. This shows that naphthalimide exhibits a strong contribution by blocking the unwanted states and some traps in the conduction mechanism, which may cause possible cracks or deep paths for carriers to travel along the junction.
关键词： magnetron sputtering,interface states,Schottky barrier diodes,spin coating,1,8-naphthalimide
更新于2025-09-23 15:19:57
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Temperature-dependent electrical properties of <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes on highly doped single-crystal substrates
摘要： Beta-phase gallium oxide (β-Ga2O3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga2O3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.
关键词： power electronics,Schottky barrier diode,wide bandgap material,gallium oxide
更新于2025-09-19 17:15:36
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High voltage endurance and switchable resistance effect observed in nanoscale copper groove structure
摘要： A switchable lateral resistance effect with high reverse voltage has been observed in nanoscale copper groove structure. With the stimulation of electric pulse and local illumination of laser, the lateral resistance of the structure can be modulated in a non-volatile manner. We attribute this phenomenon to the different width of depletion region and the Schottky barrier change caused by the nanoscale charge trapping effect. This work may inspire new approach of resistance modulation and help the development of laser-assisted electric pulse merged devices.
关键词： photoelectric effect,charge trapping effect,Schottky barrier
更新于2025-09-19 17:15:36
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Flexible β-Ga <sub/>2</sub> O <sub/>3</sub> Nanomembrane Schottky Barrier Diodes
摘要： Here, high power flexible Schottky barrier diodes (SBDs) are demonstrated on a plastic substrate using single crystalline β-Ga2O3 nanomembranes (NMs). In order to realize flexible high power β-Ga2O3 SBDs, sub-micron thick freestanding β-Ga2O3 NMs are created from a bulk β-Ga2O3 substrate and transfer-printed onto the plastic substrate via a microtransfer printing method. It is revealed that the material property of β-Ga2O3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible β-Ga2O3 SBDs exhibit the record high critical breakdown field strength (Ec) of 1.2 MV cm?1 in the flat condition and 1.07 MV cm?1 of Ec under the bending condition. Overall, flexible β-Ga2O3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high-performance flexible applications.
关键词： flexible Schottky barrier diodes,high power flexible electronics,β-Ga2O3 nanomembrane
更新于2025-09-19 17:15:36
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A Supramolecular Gel of Oxalic Acid-Monoethanolamine for Potential Schottky Barrier Diode Application
摘要： A functional supramolecular gel of oxalic acid and monoethanolamine (OXMEA) has been achieved through direct instant mixing of N,N-dimethyl formamide (DMF) solution of oxalic acid and pure monoethanolamine at room temperature under ambient condition. The rheological analysis established the viscoelastic semi-solid type nature of mechanically stable OXMEA supramolecular gel. The morphological pattern, imaged through field emission scanning electron microscopic investigation, explores the bean-seed like hierarchical architecture of the gel network. The semiconducting property of the gel was verified from band gap energy and conductivity estimation. The electrical charge transport property was also analyzed in the form of OXMEA gel based metal-semiconductor junction thin film device. The obtained nonlinear current-voltage characteristics of the device signify Schottky barrier diode nature of the synthesized gel. Overall, this work has been proof of development of semiconducting electronic device by OXMEA gel based gel medium.
关键词： Semiconductor,Morphology,Supramolecular Gel,Rheology,Schottky barrier diode
更新于2025-09-19 17:15:36