研究目的
Investigating the mechanism of filament formation in Ag doped Ge–Se resistive switching cell and the influence of the Schottky barrier on resistive switching.
研究成果
The study concludes that the resistive switching in AgGeSe2 involves the SCLC model and avalanche breakdown of the Schottky barrier, which is closely related to Ag filament formation. The filament formation depends on a 'SET current threshold', similar to the SET voltage threshold.
研究不足
The study focuses on AgGeSe2 electrolyte and may not be directly applicable to other materials. The approximation of impedance measurement results due to replacement of Ag electrode with Al might introduce some inaccuracies.
1：Experimental Design and Method Selection:
The study involves the fabrication of devices with AgGeSe2 solid state electrolyte and the analysis of their resistive switching behavior using I–V measurements, impedance measurements, AFM, and KFM imaging.
2：Sample Selection and Data Sources:
Devices were fabricated in crossbar geometry with specific dimensions and materials for electrodes and electrolyte.
3：List of Experimental Equipment and Materials:
Equipment includes Keithley 2602 setup for DC sweep, Auto-lab PGSTAT12 with FRA2 module for impedance measurements, AFM Solver Pro M for AFM and KFM imaging, and TESCAN VEGA3 for EDX mapping. Materials include Al, SiO2, GeSe2, and Ag.
4：Experimental Procedures and Operational Workflow:
Detailed steps include evaporation of electrodes and electrolyte layers, DC sweep measurements, impedance measurements, and imaging techniques.
5：Data Analysis Methods:
Analysis includes interpretation of I–V curves using the SCLC model, impedance spectra analysis, and surface potential analysis from KFM images.
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