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Photovoltaic Properties and Series Resistance of <i>p</i> -Type Si/Intrinsic Si/ <i>n</i> -Type Nanocrystalline FeSi <sub/>2</sub> Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering
摘要： p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33 × 10?1 Pa that investigated the photovoltaic properties. They exhibited a large leakage current and a small energy conversion ef?ciency of 0.62%. From using the method of Nicollian and Brews, the series resistance (Rs) values at zero bias voltage were 7.40 Ω at 2 MHz and 7.57 Ω at 50 kHz, respectively, which were in agreement with that estimated by the means of Norde. From applying the method of Hill-Coleman, the interface state density (Nss) values were 3.15 × 1015 cm?2 eV?1 at 50 kHz and 8.93 × 1013 cm?2 eV?1 at 2 MHz. The obtained results revealed the presence of Rs and Nss at the junction interface, which should be the potential cause of spoiled photovoltaic performance in the heterojunctions.
关键词： Heterojunctions,Facing-Targets Direct-Current Sputtering,Nanocrystalline Iron Disilicide,Series Resistance,Interface State Density
更新于2025-11-14 17:28:48
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<i>C–V–f, G–V–f</i> and <i>Z″–Z′</i> Characteristics of <i>n</i> -Type Si/B-Doped <i>p</i> -Type Ultrananocrystalline Diamond Heterojunctions Formed via Pulsed Laser Deposition
摘要： n-Type Si/p-type B-doped ultrananocrystalline diamond heterojunction photodiodes were built using pulsed laser deposition at a heated substrate temperature of 550 °C. Following the capacitance–voltage–frequency (C–V–f) and conductance–voltage–frequency (G–V–f) plots, the series resistance (Rs) values at zero bias voltage were 154.41 Ω at 2 MHz and 1.72 kΩ at 40 kHz. Rs should be ascribed to Rs occurring in the metallic contact and the bulk resistance in the active layer. At 40 kHz, the interface state density (Nss) was 1.78 × 10^13 eV^?1 cm^?2 and dropped exponentially to 1.39 × 10^12 eV^?1 cm^?2 at 2 MHz. An assessed Nss occurring at the heterojunction interface was the cause of deterioration in the photo-detection properties. At different V values, the appearance of the real (Z') and imaginary (Z'') characteristic curves revealed single semicircles whose centers lay below the Z' axis. The magnitude of the curve was diminished with the increment of V. The particularities of Z''–Z' plots can be identified as an equivalent circuit model. The appropriate model included Rs, which was combined with the parallel circuit of resistance and constant phase element.
关键词： UNCD,Interface State Density,Series Resistance,PLD,Impedance
更新于2025-11-14 17:28:48
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Effect of front TCO on the performance of rear-junction silicon heterojunction solar cells: Insights from simulations and experiments
摘要： In this study we make a detailed comparison between indium tin oxide (ITO), aluminum-doped zinc oxide (ZnO:Al) and hydrogenated indium oxide (IO:H) when applied on the illuminated side of rear-junction silicon heterojunction (SHJ) solar cells. ITO being the state of the art material for this application, ZnO:Al being an attractive substitute due to its cost effectiveness and IO:H being a transparent conductive oxide (TCO) with high-mobility and excellent optical properties. Through numerical simulations, the optically optimal thicknesses for a double layer anti-reflective coating system, consisting of the respective TCO and amorphous silicon oxide (a-SiO2) capping layers are defined. Through two-dimensional electrical simulations, we present a comparison between front-junction and rear-junction devices to show the behavior of series resistance (Rs) in dependence of the TCO sheet resistance (Rsh) and the device effective lifetime (τeff). The study indicates that there is a τeff dependent critical TCO Rsh value, above which, the rear-junction device will become advantageous over the front-junction design in terms of Rs. Solar cells with the respective layers are analyzed. We show that a thinner TCO optimized layer will result in a benefit in cell performance when implementing a double layer anti-reflective coating. We conclude that for a highest efficiency solar cell performance, a high mobility TCO, like IO:H, is required as the device simulations show. However, the rear-junction solar cell design permits the implementation of a lower conductive TCO in the example of the cost-effective ZnO:Al with comparable performance to the ITO, opening the possibility for substitution in mass production.
关键词： Transparent conductive oxide,Sheet resistance,Series resistance,Rear-junction,Silicon heterojunction,Anti-reflective coating
更新于2025-10-22 19:40:53
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[IEEE 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Stockholm, Sweden (2018.9.26-2018.9.28)] 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Structural analysis and modelling of packaged light emitting devices by thermal transient measurements at multiple boundaries
摘要： The paper presents a comprehensive methodology for modeling the electrical, optical, and thermal domains of high-power LEDs, focusing on the XPE2 type from Cree. It introduces optimization algorithms (OPT1 and OPT2) to extract parameters such as series resistance (RS), ideality factor (m), and saturation current (I0) from forward voltage (VF) measurements. A quadratic model for radiant voltage (Vrad) is developed to describe the optical output, and thermal modeling is addressed through structure functions derived from transient thermal measurements. The approach enables accurate prediction of LED performance across varying currents and temperatures, with applications in thermal management and design optimization.
关键词： ideality factor,thermal management,structure function,LED modeling,radiant flux,forward voltage,saturation current,series resistance
更新于2025-09-23 15:23:52
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Fowler-Nordheim-plot shape associated with large series resistance
摘要： This conference poster discusses a particular situation where the current emitted from a carbon nanofibre field electron emitter was found to be a nearly linear function of the applied voltage, with the load resistance (as seen by the high- voltage generator) approximately equal to 150 Mega-ohms. This suggests that non-orthodoxy of measured FN plots can sometimes be due to series resistance rather than current dependence in a characterization parameter, and also that "saturation" may not be a good name for the effect. The Fowler-Nordheim (FN) plot has a characteristic shape, in that it "turns over and then decreases in a roughly linear fashion", as the applied voltage V increases (and 1/V decreases). A preliminary literature search has found examples of other FN plots that behave in a generally similar way. This raises the hypothetical possibility that, when a FN plot is non-linear, information about the cause of the non-linearity could be deduced from general characteristics of its shape. However, much detailed research is needed before this could be done with confidence,
关键词： field electron emission,Fowler-Nordheim plot,series resistance effect
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Activation Energy for Solder Bond Degradation: Thermal Cycling of Field-aged Modules at Multiple Upper Temperatures
摘要： The reliability of solder joints in the solar cell metallization-interconnect system influences the lifetime of photovoltaic modules. Two field-aged modules—one with Sn62Pb36Ag2 solder at the solder joints (Solarex MSX 60), and the other with the standard Sn60Pb40 solder (Siemens M55)—were subjected to a modified thermal cycling (TC) test of IEC 61215. Three sections in each module were maintained at 85℃, 95℃, and 105℃ during the 15-minute high temperature dwell time. Current equivalent to the module short-circuit current was injected through the module when the chamber temperature was above 25℃ to simulate regular field operation. This novel approach aims to induce thermomechanical fatigue (TMF) at the solder joints and intermetallic compound (IMC) formation at the metal/solder interfaces. The activation energy (Ea) for solder bond degradation was calculated based on the series resistance (Rs) increase in TC testing rather than power drop to avoid the effect of confounding variables. Module-level Rs increase in MSX 60 module after TC800 cycles and in M55 module after TC400 cycles was 1.22% and 183.7%, respectively. The Ea determined for the module with 2wt% Ag is 0.24 eV and for that with the standard solder is 0.27 eV. The solder bond degradation seems to have been driven by TMF rather than IMC formation for both modules.
关键词： series resistance,PV module,solder bond degradation,thermal cycling,field-aged,activation energy
更新于2025-09-23 15:21:01
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Light intensity modulated photoluminescence for rapid series resistance mapping of perovskite solar cells
摘要： The champion efficiency of small area perovskite solar cells is marginally behind their silicon counterpart. However, when up-scaled to large area modules, the performance of perovskite solar cells drops significantly due primarily to the inclusion of defects during fabrication. The future of perovskite solar cells depends greatly on the ability to fabricate high efficiency large area devices which requires methods for rapidly and reliably identifying the presence of damage or imperfections that limit their performance. In this work we employ, for the first time, intensity modulated photoluminescence to spatially map the series resistance of perovskite solar cells with high spatial resolution. The technique permits the rapid identification of a range of different macroscopic defects and quantifies the impact on the local series resistance. It is performed under steady-state conditions to avoid complications of transient behaviour occurring in the perovskite film. The robustness of the approach is demonstrated by characterising an entire batch of perovskite solar cells with the mean series resistance values validated using established electrical analysis methods. Our method can be readily applied by other research groups for device optimisation or scaled to large areas for automated process control and validation.
关键词： Photoluminescence,Device characterization,Perovskite solar cells,Series resistance
更新于2025-09-23 15:21:01
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Electrical characteristics analyses of zinc-oxide based MIS structure grown by atomic layer deposition
摘要： The ZnO films are grown on the p-type Si for metal-insulator-semiconductor (MIS) type Schottky barrier diode (SBHS) fabrication by atomic layer deposition (ALD) method. The electrical characteristics of the three diodes called as D1, D2 and D3 have been investigated. The surface characteristics and thin film in structure were detected by secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM). The current-voltage (I-V) properties of Al/ZnO/p-Si structures were analyzed in the dark at room temperature. The electrical specifications such as, barrier height (?b) ideality factor (n) and series resistance (Rs) of these structures were examined by Norde’s function, Cheung method and thermionic emission (TE) theory. Barrier height values computed from Cheung and I-V method was found to be different from each other. Interface state density (Dit) of these structures was studied using the I-V properties. The non-ideal behavior of measured characteristics advised the presence of interface conditions. The acquired results imply that the fabricated diodes can be used for NIR Schottky photo detector applications.
关键词： ZnO,series resistance,ideality factor,Atomic Layer Deposition,Schottky photo detector
更新于2025-09-23 15:21:01
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The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature
摘要： The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (Io), ideality factors (n), barrier heights (Фbo), recti?cation ratio (RR) and series resistances (RS) were obtained from I-V and C-V measurements using di?erent calculation methods. At low voltages (V ≤ 0.3 V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V > 0.3 V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (NSS) as a function of energy distribution (ESS- EV) was obtained from the I-V data by taking into account the bias dependence of the e?ective barrier height (Φb) for the Re/n-type Si Schottky barrier diodes.
关键词： interface states,surface potential,recti?cation ratio,Electrical parameters,series resistance
更新于2025-09-23 15:21:01
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Influence of the Subcell Properties on the Fill Factor of Two-Terminal Perovskitea??Silicon Tandem Solar Cells
摘要： The performance of a tandem solar cell depends on the performance of its constituting subcells. Although this dependency is theoretically straightforward for open-circuit voltage (Voc) and short-circuit current, it is indirect for fill factor (FF) and thus for efficiency. We study here with simple simulations the effect on the tandem performance of each subcell FF by varying systematically their series resistance, parallel resistance, and local defect. We demonstrate that series resistance impacts strongly FF for single-junction devices but marginally for tandem devices, the opposite holding for parallel resistances (shunting). We show that localized defects will be most stringent to the tandem device when they occur in the current-limiting subcell. There is thus no obvious correlation between FFs of a tandem device and of its subcells. Finally, we compare two bottom-cell designs and highlight the importance of using a high-Voc bottom cell to reach high tandem efficiencies.
关键词： series resistance,tandem solar cells,parallel resistance,perovskite-silicon,local defects,fill factor
更新于2025-09-23 15:19:57