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- 2018
- gate oxide integrity
- avalanche ruggedness
- SiC MOSFET
- bias temperature instability
- Electronic Science and Technology
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Parasitic Capacitors' Impact on Switching Performance in a 10 kV SiC MOSFET Based Converter
摘要： In a converter based on 10 kV SiC MOSFETs, major sources of parasitic capacitance are the anti-parallel junction barrier schottky (JBS) diode, heat sink, and load inductor. A half bridge phase leg test setup is built to investigate these parasitic capacitors’ impact on the switching performance at 6.25 kV. Generally these parasitic capacitors slows down both turn-on and turn-off transient and can cause significant increase in switching energy loss. The impact of the parasitic capacitor in the load inductor is analyzed, which has either very short wire or long wire in series. Switching performance of the phase leg with two different thermal designs are compared to investigate the impact of the parasitic capacitor due to the heat sink. The large parasitic capacitor due to the large drain plate of discrete 10 kV SiC MOSFET for heat dissipation can result in 44.5% increase in switching energy loss at low load current.
关键词： 10 kV SiC MOSFET,parasitic capacitor,switching performance
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Power Cycling of Commercial SiC MOSFETs
摘要： The robustness under power cycling of three comparable silicon carbide MOSFETs in TO-247 packages from three different manufacturers is investigated, with silicon IGBTs serving as reference. The power cycling method, especially the junction temperature measurement and best practices to ensure its accuracy, is described. The results give insight into reliability and variability as well as aging behavior and failure modes. We ?nd a large variability between samples, both in initial characteristics and measured cycling lifetime, as well as signs of semiconductor device degradation. There is a signi?cant spread in the extent of the variability, in the average and minimum observed lifetime, as well as in the failure mode. Some samples fail quickly due to bond wire defects, some due to semiconductor degradation, while others show very long lifetimes.
关键词： power cycling,SiC MOSFETs,variability,reliability,aging behavior,failure modes
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Surge current capability of SiC MOSFETs in AC distribution systems
摘要： Whereas short circuit current and time ratings for power converter applications are often stated by SiC device manufacturers, surge current capability for AC electrical apparatus applications are rarely available. This paper present the experimental validation of surge current capability of selected SiC devices for low voltage AC distribution system applications. Because AC electrical apparatus, such as relays, contactors, and circuit breakers, have a different set of system parameters and requirements compared to traditional power converter applications, power semiconductor devices need to be validated from a different point of view. In fact, robustness to inductive short circuit currents, inrush currents, short and long time overload are some of the basic requirements for the utilization of WBG devices for these applications. In this paper, we compare the performance of different SiC MOSFETs under different types of AC waveform conditions.
关键词： semiconductor device characterization,temperature measurement,solid state circuit breaker,WBG semiconductor devices,overload capability,surge current,SiC MOSFET,electrical apparatus
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Thermally Triggered SiC MOSFET Aging Effect on Conducted EMI
摘要： In this paper, thermally triggered SiC MOSFET aging effect on SiC based boost PFC converter’s conducted EMI is investigated. Existing EMI evaluation and suppression studies are mostly based on power devices at healthy state. This study provides a comprehensive EMI evaluation at different state of health of SiC MOSFET used in continuous conduction mode (CCM) Boost PFC converter. For this purpose, SiC MOSFET samples are exposed to accelerated aging and the corresponding device degradations are triggered by thermal stresses. To study device characteristics at different state of health, devices under test (DUT) electrical parameters and switching transients are evaluated over aging to support SiC based AC/DC converter’s conducted EMI discussion. Respectively, device aging effect on differential mode (DM) noise and common mode (CM) noise changes are discussed in detail. An 800W single phase CCM Boost PFC prototype is built to evaluate both DM and CM noise in band B frequency range (150kHz~30MHz) with experimental testing results. According to the study, high frequency noise decrement is observed after SiC MOSFET is thermally aged.
关键词： thermal stress,power factor correction (PFC),Accelerated aging,SiC power MOSFET,EMI/EMC
更新于2025-09-04 15:30:14
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99 % Efficient 10 kV SiC-Based 7 kV/400 V DC-Transformer for Future Data Centers
摘要： The power supply chain of data centers from the medium voltage (MV) utility grid down to the chip level voltage consists of many series connected power conversion stages and accordingly shows a relatively low ef?ciency. Solid-State Transformers (SSTs) could improve the ef?ciency by substantially reducing the number of power conversion stages and/or directly interfacing the MV AC grid to a 400 V DC bus, from where tens of server racks with a power consumption of several kilowatts could be supplied by individual SSTs. The recent development of SiC MOSFETs with a blocking voltage of 10 kV enables the realization of a simple and hence highly reliable two-stage SST topology, consisting of an AC/DC PFC recti?er and a subsequent isolated DC/DC converter. In this context, an isolated 25 kW, 48 kHz, 7 kV to 400 V series resonant DC/DC converter based on 10 kV SiC MOSFETs is realized and tested in this paper. To achieve zero voltage switching (ZVS) of all MOSFETs, a special modulation scheme to actively control the amount of the switched magnetizing current on the MV and LV side is implemented. Furthermore, the design of all main components and especially the electrical insulation of the employed medium frequency (MF) transformer is discussed in detail. Calorimetric ef?ciency measurements show that a full-load ef?ciency of 99.0 % is achieved, while the power density reaches 3.8 kW/L (63 W/in3).
关键词： ZVS,isolated DC/DC,medium-voltage transformer,10kV SiC MOSFETs,soft-switching,Medium-voltage,calorimetric measurement
更新于2025-09-04 15:30:14
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an OrientationDependent Surface Free Energy
摘要： Topography simulation of chemical-vapor-deposition (CVD) trench filling has been advanced as a tool for designing fabrication processes of high-voltage 4H-SiC superjunction devices. In the longitudinal section of filled stripe trenches, an experimentally observed dip, which had not been well reproduced with a previous technique using a fixed surface free energy (γ), came to be qualitatively reproduced by including an orientation dependence of γ.
关键词： orientation,SiC,surface free energy,CVD,trench
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A Voltage-Edge-Rate-Limiting Soft-Switching Inverter for Wide-Bandgap Devices
摘要： Wide-bandgap (WBG) switches can achieve switching times on the order of several nanoseconds. However, faster switches generate larger inverter output dv/dt. Various deleterious effects attributed to large inverter dv/dt have been observed in various applications, especially in motor drive systems. The effects include false turn-on of WBG switches due to cross-talk, transient over-voltages at motor terminals, electromagnetic interference, and motor bearing failures due to micro arcs. A common approach for limiting peak inverter dv/dt involves the insertion of a dv/dt filter. However, the dv/dt filter introduces extra power losses and increases the size/weight of the heat sink. Soft-switching circuits can reduce inverter dv/dt and switching losses, but using soft-switching to accurately control dv/dt has not been fully explored. A new soft-switching circuit, entitled the auxiliary resonant soft-edge pole (ARSEP), is set forth. The ARSEP improves the available soft-switching circuits so that the dv/dt can be accurately controlled through circuit parameter design. An ARSEP inverter prototype based on SiC MOSFETs was designed, simulated, built, and tested to verify its performance and benefits. Compared to a conventional hard-switched inverter with a dv/dt filter, the ARSEP inverter results in a significant reduction in overall power loss, inductor volume, and weight.
关键词： SiC MOSFETs,soft-switching circuits,auxiliary resonant soft-edge pole (ARSEP),inverter output dv/dt,Wide-bandgap (WBG) switches
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - 6.5kV SiC JFET-based Super Cascode Power Module with High Avalanche Energy Handling Capability
摘要： A new Super Cascode Power Module (SCPM) topology was designed, and a 6.5kV/100A implementation was fabricated and tested. Simulation and test results show 175kHz switching with 28ns switching time. Vulnerability to avalanche energy was observed, and a solution was proposed and verified with simulation. Simulation shows more than 99% of the avalanche energy is diverted to the power devices from balancing diodes, which have much smaller die size compared with the power device.
关键词： avalanche energy,super cascode,SiC JFET
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Avalanche rugged 1200 V 80 m Ω SiC MOSFETs with state-of-the-art threshold voltage stability
摘要： 1200 V 80 m? SiC MOSFETs were developed for 150 mm wafer mass production. Avalanche ruggedness was confirmed by measuring the failure distribution in unclamped inductive switching (UIS) for five wafers. The high voltage blocking reliability was verified by running 1000hr high temperature reverse bias tests for totally 770 devices without failures. The process conditions were optimized for gate oxide integrity and to minimize threshold voltage (VTH) drift both during positive and negative bias stress. Significant reductions of extrinsic defects in the gate oxide breakdown distributions were obtaine d using optimize d process conditions for both product die s and NMO S capacitors. State -of-the -art VTH stability was ve rified by transient measurements of VTH drift during gate bias stress for packaged 80 m? SiC MOSFETs.
关键词： gate oxide integrity,avalanche ruggedness,SiC MOSFET,bias temperature instability
更新于2025-09-04 15:30:14