研究目的
Investigating the impact of including an orientation-dependent surface free energy in the topography simulation of 4H-SiC CVD trench filling to reproduce experimentally observed dips in the longitudinal section of filled stripe trenches.
研究成果
The inclusion of an orientation-dependent surface free energy in the topography simulation qualitatively reproduced both the experimentally observed dip in the longitudinal section and a void-free cross section of 4H-SiC stripe trenches filled by subatmospheric CVD, suggesting a potential reduction in development time for 4H-SiC superjunction power devices.
研究不足
The study's simulation was limited by the assumption of a simplified orientation dependence of surface free energy and did not fully account for three-dimensional effects in the trench filling process.
1：Experimental Design and Method Selection:
The study used a continuum-diffusion model to simulate the CVD trench filling process, incorporating the Gibbs-Thomson effect and an orientation-dependent surface free energy.
2：Sample Selection and Data Sources:
The study focused on 4H-SiC trenches formed on a (0001) substrate and filled under specific CVD conditions.
3：List of Experimental Equipment and Materials:
A horizontal hot-wall reactor was modeled based on 2D computational fluid dynamics.
4：Experimental Procedures and Operational Workflow:
The simulation solved equations using technology computer-aided-design (TCAD) that use high-order nonoscillatory schemes for Hamilton-Jacobi equations.
5：Data Analysis Methods:
The study compared simulated and experimentally observed longitudinal and cross sections of filled trenches.
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