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0.16 μm–BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise
摘要： Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 μm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm × 0.67 mm total area, 10 × 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs.
关键词： Silicon photomultiplier (SiPM),photon counting,photon number resolution,optical crosstalk,time-correlated single-photon counting (TCSPC),afterpulsing
更新于2025-09-23 15:21:01
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Silicon photomultipliers with area up to 9 mm2 in a 0.35 μm CMOS process
摘要： Silicon photomultipliers produced using standard complementary metal oxide semiconductor (CMOS) processes are at the basis of modern applications of sensors for weak photon fluxes. They allow in fact to integrate transistor-based electronic components within sensors and provide intelligent read-out strategies. In this paper we investigate the scalability of a 0.35 μm CMOS process to large area devices. We report the design and characterization of SiPMs with a total area of 1 mm2, 4 mm2 and 9 mm2. Cross talk, photon detection efficiency at 420 nm, gain at 2.5 V overvoltage and breakdown voltage temperature coefficient do not depend on the total area of the sensor and are 10%, 35%, 2.5 × 106 and 35 mV/K respectively. The dark count rate scales with the total area of the device as 180 kHz/mm2. The total output capacitance, the decay time of the single photon signal and the single photon time resolution depend on the area of the device. We obtain a capacitance of 66.9 pF, 270.2 pF and 554.0 pF, a decay time of (27.1 ± 0.1) ns, (50.8 ± 0.1) ns and (78.2 ± 0.1) ns and a single photon time resolution of (77.97 ± 0.51) ps, (201.67 ± 0.98) ps and (282.28 ± 0.86) ps for the 1 mm2, 4 mm2 and 9 mm2 SiPMs respectively.
关键词： CMOS,Silicon photomultiplier (SiPM),avalanche breakdown structures,Sensors for Brain Positron Emission Tomography
更新于2025-09-19 17:15:36
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[IEEE 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) - Sydney, Australia (2018.11.10-2018.11.17)] 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) - Comparison of NaI coupled to photomultiplier tube and silicon photomultiplier
摘要： The NaI scintillator has been widely used for decades. In recent years, the silicon photomultiplier (SiPM), a new photosensor based on semiconductor technologies, has attracted a great deal of attention and has started replacing the conventional photomultiplier tube (PMT) in some applications. This work compares the performance of two NaI detectors with the same size crystals in which one is coupled to a PMT and the other is coupled to a SiPM array. The response of both detectors is fairly linear although the NaI-SiPM detector shows signs of saturation for high energy gammas. The waveform and the energy resolution of the detectors are studied for temperatures between –20 and 50°C. Because of the capacitance of the SiPMs, the decay constant of the waveform for the NaI-SiPM detector is signi?cantly longer than that for the NaI-PMT detector. The energy resolution for both detectors changes with temperatures for a ?xed shaping time. However, with a proper choice of the shaping time according to the temperature, the energy resolution for the NaI-SiPM detector is as good as the NaI-PMT detector.
关键词： NaI scintillator,silicon photomultiplier (SiPM),energy resolution,photomultiplier tube (PMT),temperature dependence
更新于2025-09-16 10:30:52
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Using quantum entangled photons to measure the absolute photon detection efficiency of a multi-pixel SiPM array
摘要： Spontaneous parametric down-conversion (SPDC) of a visible pump photon is the generation of two less energetic, quantum entangled photons (QEPs), often in the near infrared (NIR), using a non-linear crystal e.g. beta barium borate. Since the detection of one QEP predicates the existence of its entangled twin, QEPs have previously been used to measure the absolute photon detection efficiency (PDE), ??(??), of a detector under test by measuring time-coincident events with an additional trigger detector, allowing evaluation of ?????? ?? (??) without recourse to a calibrated reference detector. In this paper, the QEP absolute PDE measurement technique is outlined, and an extension of this technique is proposed to measure ??(??) for pixels on a multi-pixel array where each pixel provides an individual signal output. By treating all pixels in a multi-pixel array as indistinguishable, Monte Carlo simulations show that the symmetry of the measurement allows ??(??) to be determined for each pixel. A route towards experimental measurements using this technique with a 64-pixel SiPM array combined with a 64-channel waveform digitiser module is outlined.
关键词： Silicon photomultiplier,SiPM,Photon detection efficiency,Quantum entanglement
更新于2025-09-12 10:27:22
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Wearable SiPM-based NIRS Interface Integrated with Pulsed Laser Source
摘要： We present the design of a miniaturized probe integrating silicon photomultiplier and light-pulsing electronics in a single 2x2mm2 CMOS chip which includes functional blocks such as a fast pulse-laser driver and synchronized single-photon detection circuit. The photon pulses can be either counted on-chip or processed by an external high-speed electronic module such as time-corelated single photon counting (TCSPC) unit. The integrated circuit was assembled on a printed circuit board (PCB) and also on a 2.5D silicon interposer platform of size 1 cm and interfaced with a silicon photomultiplier (SiPM), vertical cavity surface emitting laser (VCSEL) and other ancillary components such as capacitors and resistors. Our approach of integrating an optical interface to optimize light collection on the small active area and light emission from the vertical-cavity surface-emitting laser (VSCEL) will facilitate clinical adoption in many applications and change the landscape of Near Infrared Spectroscopy (NIRS) hardware commercially due to significant optode-size reduction and the elimination of optical fibers.
关键词： Near-Infrared Spectroscopy (NIRS),Time-Domain (TD),complementary metal-oxide-semiconductor (CMOS),Vertical Cavity Surface Emitting Laser (VCSEL),Silicon Photomultiplier (SiPM),Optical Probe
更新于2025-09-11 14:15:04
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An Advanced 100-Channel Readout System for Nuclear Imaging
摘要： Reading out from large-scale silicon photomultiplier (SiPM) arrays is a fundamental technical obstacle blocking the application of revolutionary SiPM technologies in nuclear imaging systems. Typically, it requires using dedicated application-specific integrated circuits (ASICs) that need a long iterative process, special expertise, and tools to develop. The pico-positron emission tomography (Pico-PET) electronics system is an advanced 100-channel readout system based on 1-bit sigma–delta modulation and a field-programmable gate array (FPGA). It is compact (6 × 6 × 0.8 cm3 in size), consumes little power (less than 3W), and is constructed with off-the-shelf low-cost components. In experimental studies, the Pico-PET system demonstrates excellent and consistent performance. In addition, it has some unique features that are essential for nuclear imaging systems, such as its ability to measure V–I curves, breakdown voltages, and the dark currents of 100 SiPMs accurately, simultaneously, and in real time. The flexibility afforded by FPGAs allows multiple-channel clustering and intelligent triggering for different detector designs. These highly sought-after features are not offered by any other ASICs and electronics systems developed for nuclear imaging. We conclude that the Pico-PET electronics system provides a practical solution to the long-standing bottleneck problem that has limited the development of potentially advanced nuclear imaging technology using SiPMs.
关键词： silicon photomultiplier (SiPM),readout electronics,Field-programmable gate array (FPGA),nuclear imaging,sigma–delta modulation
更新于2025-09-10 09:29:36
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Well structure engineering to improve the responsivity of p-on-n SiPM developed at KAIST-NNFC
摘要： This paper describes the electrical and optical properties of the p-on-n silicon photomultiplier (SiPM) developed at KAIST-NNFC. In particular, we present a comparison of the new and old versions in terms of several SiPM characteristics to highlight the improvements achieved through internal structure engineering. The new-version sensors were fabricated on a 200 mm n-doped epitaxial silicon wafer with an abrupt p+/n junction structure identical to that used in the old-version sensors using 0.18 μm CMOS technology. Based on the previous work, several changes were applied to the improved sensors, such as rapid thermal processing (RTP) conditions and ion implantation conditions for junction formation. In the work, we demonstrate that the reverse current is reduced by more than a factor of 104 with the modified RTP conditions. Furthermore, we show that the breakdown voltage is decreased by nearly 20% and the PDE in the blue-light regime is enhanced by nearly a factor of two as a result of internal structure engineering.
关键词： Silicon photomultiplier,SiPM,p-on-n structure
更新于2025-09-04 15:30:14