摘要： The NaI scintillator has been widely used for decades. In recent years, the silicon photomultiplier (SiPM), a new photosensor based on semiconductor technologies, has attracted a great deal of attention and has started replacing the conventional photomultiplier tube (PMT) in some applications. This work compares the performance of two NaI detectors with the same size crystals in which one is coupled to a PMT and the other is coupled to a SiPM array. The response of both detectors is fairly linear although the NaI-SiPM detector shows signs of saturation for high energy gammas. The waveform and the energy resolution of the detectors are studied for temperatures between –20 and 50°C. Because of the capacitance of the SiPMs, the decay constant of the waveform for the NaI-SiPM detector is signi?cantly longer than that for the NaI-PMT detector. The energy resolution for both detectors changes with temperatures for a ?xed shaping time. However, with a proper choice of the shaping time according to the temperature, the energy resolution for the NaI-SiPM detector is as good as the NaI-PMT detector.