- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Low temperature characteristics of SiPMs after very high neutron irradiation
摘要： The design of the CMS phase II upgrade for the HL-LHC uses SiPMs for the Barrel Timing Layer (BTL) and the Behind HCAL detector (BH or CEH). In both sub-detectors the SiPMs will see a 1 MeV equivalent dose of around 1014 n/cm2. To lower the noise in the SiPMs the design is to keep the SiPMs at a low temperature of ?30 ?C. Different samples from two manufactures of SiPMs were irradiated to a total dose of resp. 2 × 1012, 5 × 1013 at the TRIGA reactor at the JSI in Slovenia. The noise in SiPMs is dominated by trap assisted tunneling which is a result of the high internal electric field in SiPMs. We therefore studied the noise behavior from +10 ?C to ?40 ?C from standard high internal field and specially designed low field SiPMs from FBK-irst and Hamamatsu. After the initial characterization before annealing the noise decrease in SiPMs was also studied using accelerated annealing.
关键词： Silicon photomultiplier,MPPC,CMS,GAPD,Radiation damage
更新于2025-09-23 15:23:52
-
Fast neutron detectors with silicon photomultiplier readouts
摘要： This work summarizes a fast neutron detection performance of two different silicon photomultipliers from two manufacturers. The first SiPM (MAPD-3NK) from Zecotek Photonics consists of deeply buried cells with the active area 3.7x3.7 mm2. The second one (MPPC-S12572-010P) from Hamamatsu, however, consists of surface cell structure which the active area is 3x3 mm2. Both SiPMs have the same pixel density of 10000 mm-2. Both SiPMs coupled to Stilbene (5*5*5 mm3) and p-terphenyl (5*5*5 mm3) plastic scintillators were evaluated for detection ability of fast neutrons using a PuBe neutron source. Charge comparison and zero crossing neutron/gamma discrimination techniques were performed for these detectors and the results were compared. The obtained results prove a good fast neutron detection performance of the SiPMs which makes it possible to use these types of neutron detectors in fast neutron detection applications.
关键词： Pulse shape discrimination,Micropixel avalanche photodiode,Charge comparison,SiPM,MAPD,PSD,Zero crossing,Silicon photomultiplier
更新于2025-09-23 15:21:21
-
0.16 μm–BCD Silicon Photomultipliers with Sharp Timing Response and Reduced Correlated Noise
摘要： Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of any additional electronics, e.g., on-chip readout and analog (or digital) processing circuitry. In this paper, we present the design and characterization of two microelectronics-compatible SiPMs fabricated in a 0.16 μm–BCD (Bipolar-CMOS-DMOS) technology, with 0.67 mm × 0.67 mm total area, 10 × 10 square pixels and 53% fill-factor (FF). The photon detection efficiency (PDE) surpasses 33% (FF included), with a dark-count rate (DCR) of 330 kcps. Although DCR density is worse than that of state-of-the-art SiPMs, the proposed fabrication technology enables the development of cost-effective systems-on-chip (SoC) based on SiPM detectors. Furthermore, correlated noise components, i.e., afterpulsing and optical crosstalk, and photon timing response are comparable to those of best-in-class commercial SiPMs.
关键词： Silicon photomultiplier (SiPM),photon counting,photon number resolution,optical crosstalk,time-correlated single-photon counting (TCSPC),afterpulsing
更新于2025-09-23 15:21:01
-
A normally-distributed crosstalk model for silicon photomultipliers
摘要： Optical crosstalk (OCT) in silicon photomultipliers (SiPM) occurs when photon detection in a microcell leads to the production of further photons that are also detected. Various models have been considered to predict experimental data with varying degrees of success. In this paper, we introduce the Normally-Distributed Crosstalk Model (NDCM), where the probability of triggering additional microcells is given by a 2-d normal distribution with a standard deviation of ??: a device-specific parameter representing OCT photon propagation path length in terms of microcell pitch. Monte Carlo (MC) simulations of NDCM are compared to existing models and experimental data from the CHEC-S camera developed for the Cherenkov Telescope Array, which suggests that OCT occurs with a ?? ≈ 5 microcells in this device.
关键词： SiPM,Silicon photomultiplier,Optical crosstalk
更新于2025-09-23 15:21:01
-
Silicon photomultipliers with area up to 9 mm2 in a 0.35 μm CMOS process
摘要： Silicon photomultipliers produced using standard complementary metal oxide semiconductor (CMOS) processes are at the basis of modern applications of sensors for weak photon fluxes. They allow in fact to integrate transistor-based electronic components within sensors and provide intelligent read-out strategies. In this paper we investigate the scalability of a 0.35 μm CMOS process to large area devices. We report the design and characterization of SiPMs with a total area of 1 mm2, 4 mm2 and 9 mm2. Cross talk, photon detection efficiency at 420 nm, gain at 2.5 V overvoltage and breakdown voltage temperature coefficient do not depend on the total area of the sensor and are 10%, 35%, 2.5 × 106 and 35 mV/K respectively. The dark count rate scales with the total area of the device as 180 kHz/mm2. The total output capacitance, the decay time of the single photon signal and the single photon time resolution depend on the area of the device. We obtain a capacitance of 66.9 pF, 270.2 pF and 554.0 pF, a decay time of (27.1 ± 0.1) ns, (50.8 ± 0.1) ns and (78.2 ± 0.1) ns and a single photon time resolution of (77.97 ± 0.51) ps, (201.67 ± 0.98) ps and (282.28 ± 0.86) ps for the 1 mm2, 4 mm2 and 9 mm2 SiPMs respectively.
关键词： CMOS,Silicon photomultiplier (SiPM),avalanche breakdown structures,Sensors for Brain Positron Emission Tomography
更新于2025-09-19 17:15:36
-
[IEEE 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) - Sydney, Australia (2018.11.10-2018.11.17)] 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) - Comparison of NaI coupled to photomultiplier tube and silicon photomultiplier
摘要： The NaI scintillator has been widely used for decades. In recent years, the silicon photomultiplier (SiPM), a new photosensor based on semiconductor technologies, has attracted a great deal of attention and has started replacing the conventional photomultiplier tube (PMT) in some applications. This work compares the performance of two NaI detectors with the same size crystals in which one is coupled to a PMT and the other is coupled to a SiPM array. The response of both detectors is fairly linear although the NaI-SiPM detector shows signs of saturation for high energy gammas. The waveform and the energy resolution of the detectors are studied for temperatures between –20 and 50°C. Because of the capacitance of the SiPMs, the decay constant of the waveform for the NaI-SiPM detector is signi?cantly longer than that for the NaI-PMT detector. The energy resolution for both detectors changes with temperatures for a ?xed shaping time. However, with a proper choice of the shaping time according to the temperature, the energy resolution for the NaI-SiPM detector is as good as the NaI-PMT detector.
关键词： NaI scintillator,silicon photomultiplier (SiPM),energy resolution,photomultiplier tube (PMT),temperature dependence
更新于2025-09-16 10:30:52
-
Scanning a Silicon Photomultiplier with a Laser Beam
摘要： The Silicon Photomultiplier (SiPM) is a novel semiconducting photodetector which can detect single photons. It consists of many microcells (pixels) operating in the so-called Geiger mode. At present, there are two principal designs among such devices: surface pixel and deeply buried pixel (microwell) structures. The cellular structure decreases the device’s effective photosensitive area, expressed in terms of the geometrical fill factor. It is very important to take it into account when developing new constructions with high pixel densities that are necessary for increasing the dynamic range. It is believed that the fill factor of deep microwell SiPMs is close to unity. In this work, the technique and results of studying the zonal response of different SiPMs by scanning (moving) with micron laser spot are presented. It is shown that the geometrical fill factor of the deep microwell SiPM is less than 100% when detecting the red light (λ = 632 nm).
关键词： Silicon Photomultiplier,Geiger mode,geometrical fill factor,laser scanning,deep microwell SiPM,SiPM
更新于2025-09-16 10:30:52
-
Using quantum entangled photons to measure the absolute photon detection efficiency of a multi-pixel SiPM array
摘要： Spontaneous parametric down-conversion (SPDC) of a visible pump photon is the generation of two less energetic, quantum entangled photons (QEPs), often in the near infrared (NIR), using a non-linear crystal e.g. beta barium borate. Since the detection of one QEP predicates the existence of its entangled twin, QEPs have previously been used to measure the absolute photon detection efficiency (PDE), ??(??), of a detector under test by measuring time-coincident events with an additional trigger detector, allowing evaluation of ?????? ?? (??) without recourse to a calibrated reference detector. In this paper, the QEP absolute PDE measurement technique is outlined, and an extension of this technique is proposed to measure ??(??) for pixels on a multi-pixel array where each pixel provides an individual signal output. By treating all pixels in a multi-pixel array as indistinguishable, Monte Carlo simulations show that the symmetry of the measurement allows ??(??) to be determined for each pixel. A route towards experimental measurements using this technique with a 64-pixel SiPM array combined with a 64-channel waveform digitiser module is outlined.
关键词： Silicon photomultiplier,SiPM,Photon detection efficiency,Quantum entanglement
更新于2025-09-12 10:27:22
-
Wearable SiPM-based NIRS Interface Integrated with Pulsed Laser Source
摘要： We present the design of a miniaturized probe integrating silicon photomultiplier and light-pulsing electronics in a single 2x2mm2 CMOS chip which includes functional blocks such as a fast pulse-laser driver and synchronized single-photon detection circuit. The photon pulses can be either counted on-chip or processed by an external high-speed electronic module such as time-corelated single photon counting (TCSPC) unit. The integrated circuit was assembled on a printed circuit board (PCB) and also on a 2.5D silicon interposer platform of size 1 cm and interfaced with a silicon photomultiplier (SiPM), vertical cavity surface emitting laser (VCSEL) and other ancillary components such as capacitors and resistors. Our approach of integrating an optical interface to optimize light collection on the small active area and light emission from the vertical-cavity surface-emitting laser (VSCEL) will facilitate clinical adoption in many applications and change the landscape of Near Infrared Spectroscopy (NIRS) hardware commercially due to significant optode-size reduction and the elimination of optical fibers.
关键词： Near-Infrared Spectroscopy (NIRS),Time-Domain (TD),complementary metal-oxide-semiconductor (CMOS),Vertical Cavity Surface Emitting Laser (VCSEL),Silicon Photomultiplier (SiPM),Optical Probe
更新于2025-09-11 14:15:04
-
Application of silicon photomultiplier’s model to the design of the front-end electronics
摘要： A designer of the front-end electronics for the silicon photomultipliers (SiPM) should take into account unique characteristics of this photodetector. The performance of the front-end should boost the qualities of the SiPM, including its timing performance and internal gain. That is why there is a need to create an electrical model of the SiPM, that in particular would emphasize on the equivalence capacitance of the detector and the shape of the output pulse produced in response to an incident photon [1]. This paper presents a simple model of the SiPM that was created based on the parameters of chosen photodetectors. Afterwards the model was applied to the design process of an integrated circuit (IC). After the fabrication process, the measurements of the IC with the SiPM attached, were compared with their simulation equivalents. The comparison was conducted in terms of the peaking time and the amplitude of the output pulses. The results presented a high level of matching between the simulation model and real behavior of the photodetector. These results can help in designing more advanced, multi-channel front-ends for the SiPMs.
关键词： Silicon photomultiplier,Super-common gate amplifier,SiPM model
更新于2025-09-11 14:15:04