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High infrared transmittance CdS single crystal grown by physical vapor transport
摘要： Φ55 × 15 mm2 CdS bulk single crystal with high infrared transmittance was grown by physical vapor transport. The single crystal has a consistent structure from top to bottom, which was confirmed by X-ray diffraction. The (002) full-width at half-maximum of the X-ray diffraction was measured to be 60.00 arcsec, indicating a good quality of the structure. Hall mobility, specific resistivity, and carrier concentration for the top and bottom of the crystal were observed as well. Transmittance for the CdS single crystal was measured to be higher than 70% from 2.5 to 4.5 μm, making the single crystal an important candidate for infrared window materials. Furthermore, the absorption mechanism of the CdS single crystal was analyzed.
关键词： physical vapor transport,X-ray diffraction,semiconducting materials,single crystal growth
更新于2025-09-23 15:23:52
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Numerical Analysis of Thermal Stress in Semi-Transparent Oxide Crystals Grown by Czochralski and EFG Methods
摘要： Crystal growth of oxides is generally difficult since large curvatures of the growth interface in these systems generate high thermal stress, dislocations and crystal cracking. Three-dimensional numerical modeling is applied to investigate thermal stress distribution in sapphire and langatate La3Ta0.5Ga5.5O14 (LGT) semi-transparent crystals grown by Czochralski (Cz) and Edge-defined Film-fed Growth (EFG) techniques. The analysis of thermal stress distribution in a sapphire ingot grown in a Czochralski furnace shows high von Mises stresses distributed almost symmetrically on large areas in the crystal. Thermal stress computations for piezoelectric langatate crystals grown in a Czochralski configuration show non-symmetrical von Mises distribution with higher stress on one side of the ingot. These numerical results are in agreement with experimental results showing non-symmetrical cracking at the outer surface of the crystal. 3D modeling of multi-die EFG growth of white sapphire ribbons shows that the von Mises stress is almost constant when the number of ribbons is increased from two to ten. Two models are applied to simulate the internal radiative heat transfer in the sapphire crystals: P1 approximation and the Rosseland radiation model. Numerical results show that applying Rosseland formula introduces significant errors in temperature field calculations especially in the case of the EFG configuration.
关键词： computer simulation,Czochralski,sapphire,single crystal growth,stresses
更新于2025-09-23 15:22:29
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Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method
摘要： We report the growth of 4 mm diameter x 50 mm long Boron Carbide (B4C) with large single crystal regions using a Laser Diode Floating Zone (LDFZ) method at varying growth rates of 5-20 mm/hr. These materials were grown using polycrystalline B4C as a seed. Microstructural characterization shows the presence of a significant number of twinning-boundaries along the growth direction ([001]h) oriented in the (1210)h plane. At faster growth rates >10 mm/hr, the crystal orientation was reproducible, suggesting a twin-plane mediated growth mechanism. On the contrary, at slower growth rates <10 mm/hr the crystal orientation was not reproducible, suggesting a critical rate for twin-plane mediated growth to dominate. Zone refinement of these crystals led to a significant reduction of trace impurities to better than 99.999 wt % purity, at the expense of increased twinning. Powder x-ray diffraction confirms that the bulk is rhombohedral B4C, consistent with the microstructural analysis. The X-ray reciprocal space maps reveal the growth direction to be close to the [001]h direction, and the corresponding ω-rocking curve width is ~530arcsec. The rocking curve consisted of 3 distinct peaks, indicating in-plane mosaicism, consistent with the twinning observed. Berkovich nano-indentation of the key (001)h plane showed 41 ± 1 GPa hardness, with a Young’s modulus of 520 ± 14 GPa, comparable to literature reports.
关键词： A2. Single crystal growth,A1. Defects,A1. X-ray diffraction,A1. Characterization,A2. Growth from melt
更新于2025-09-23 15:21:01
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Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates
摘要： The epitaxial lateral overgrowth of GaN by metal-organic chemical vapor deposition using a nano-cavity patterned sapphire substrate (NCPSS) was investigated. The NCPSS, with a hexagonal non-close-packed nano-cavity pattern on the sapphire substrate, was fabricated by polystyrene sphere coating and size reduction by reactive ion etching, followed by deposition of alumina and thermal oxidation. The coalescence of GaN on the NCPSS was achieved by the formation of relatively large GaN islands and enhanced lateral overgrowth of the GaN islands over several nano-cavity pattern areas. The threading dislocation density (TDD) measured by cathodoluminescence measurement was significantly reduced from 2.4 108 cm-2 to 6.9 107 cm-2 by using the NCPSS. Dislocation behaviors that contribute to the reduction of TDD of the GaN layer were observed by transmission electron microscopy. Raman spectroscopy revealed that the compressive stress in the GaN layer was reduced by 21% due to the embedded nano-cavities. In addition, the diffuse reflectance of GaN on the NCPSS was enhanced by 54% ~ 62%, which is attributed to the increased probability of light extraction through effective light scattering by nano-cavities.
关键词： A1. Nanostructures,B1. Nitrides,A2. Single crystal growth,A3. Metalorganic chemical vapor deposition,A3. Nanoscale epitaxial lateral overgrowth
更新于2025-09-23 15:21:01
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Crystal size improvement of Bi-based superconducting whiskers under stress-controlled condition
摘要： Using stress-controlled amorphous precursors, we have successfully grown Bi2Sr2Ca n-1CunOy (Bi-based) high-transition temperature superconducting whiskers with large crystal-size. Especially, under a high compressive stress attained by 1 GPa pelletizing, the crystal size of a whisker was significantly enhanced up to 9.5 mm length (growth period: 96 h) which is 2.4 times larger than that of the conventional amorphous-precursors method when using similar growth conditions and substrate compositions. In addition, by using the stress-controlled precursors, the number of the obtained Bi-based whiskers were also increased by a factor of 1.8.
关键词： A2. Single crystal growth,A1. Stresses,B2. Superconducting materials,A1. Growth models
更新于2025-09-23 15:19:57
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Pushing Boundaries: High Pressure, Supercritical Optical Floating Zone Materials Discovery
摘要： In this perspective review, we provide the rationale for utilizing supercritical fluids for solid state materials discovery in the context of recent advances in the field of high pressure synthesis. We discuss the importance of the transition from gas-like to solvent-like environments in which materials synthesis and crystallization is occurring, the appropriate conceptual frameworks for its impact on synthesis and directional solidification, and dispel popular myths. We provide an overview of materials that have been grown in single crystal form by the high pressure optical floating zone technique, report the first successful stable molten zone in an optical furnace at P = 300 bar, and show viability of the traveling solvent method even with high fluid pressures. Further, we report on some unexpected observations found in the highly dynamic synthesis environment of supercritical fluids, enabled by the ability to observe, in real time, materials behavior. Finally, we offer a perspective on the scientific domains opened by these new capabilities.
关键词： Single crystal growth,Materials discovery,Optical floating zone,High pressure synthesis,Supercritical fluids
更新于2025-09-23 15:19:57
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Growth, structural, Hirshfeld surface, optical, laser damage threshold, dielectric and chemical etching analysis of 4-dimethylaminopyridinium 4-nitrophenolate 4-nitrophenol (DMAPNP)?single crystal
摘要： The organic 4-dimethylaminopyridinium 4-nitrophenolate 4-nitrophenol (DMAPNP) single crystal was grown by slow evaporation solution growth technique at 35 °C. The single crystal X-ray diffraction analysis confirms that the grown crystal belongs to the orthorhombic crystal system with the space group of P212121. Different functional groups were affirmed using FT-IR and FT-Raman analysis. The intermolecular interactions of the DMAPNP molecule were executed using Hirshfeld surface study. The Mulliken atomic charge population analysis was performed using density functional theory (DFT). The bonding interactions between two orbital atoms and groups were executed by the density of state (DOS). The optical transmittance study shows that the grown crystal has 60 to 78% transmittance in the Vis–NIR region. It has an emission peak at 482 nm in the photoluminescence (PL) spectrum. The photoconductivity analysis shows that the DMAPNP has negative photoconductive behavior. The thermal stability of the DMAPNP crystal was investigated by TG–DTA analysis. The etch pit density of the title crystal was investigated using chemical etching study. The mechanical stability of the DMAPNP crystal was tested by Vickers microhardness tester. Laser damage threshold analysis reveals that the DMAPNP is stable up to 10 mJ of laser power. The dielectric properties were assessed and the electronic polarizability of the DMAPNP was evaluated by the different empirical relations. The second harmonic generation (SHG) efficiency of DMAPNP crystal was measured by Kurtz–Perry powder technique.
关键词： optical,4-dimethylaminopyridinium 4-nitrophenolate 4-nitrophenol (DMAPNP) single crystal,Growth,chemical etching analysis,dielectric,Hirshfeld surface,structural,laser damage threshold
更新于2025-09-16 10:30:52
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Growth Promotion of Targeted Crystal Face by Nano-Processing via Laser Ablation
摘要： Control of crystal shape is an indispensable step for various applications of crystalline products. However, obtaining the desired crystal shape by conventionally tuning environmental conditions (temperature, additives, etc.) cannot always be reached. Recently, we have developed an innovative approach for spatiotemporal control of crystal growth of proteins and amino acids by locally modifying crystal structure (e.g., formation of screw dislocations) via femtosecond (fs) laser ablation. In this work, to clarify the appropriate laser condition for controlling the shape of single crystals with minimized damage, we first systematically investigated the dependence of pulse duration on laser ablation and crystal growth of L-phenylalanine (L-Phe). By using a laser system with tunable pulse durations from fs to nanosecond (ns), we found fs laser ablation can offer nanometer-sized, sharp etching of which diameter was smaller than the diffraction limit. By utilizing such nano-processing via fs laser ablation for promoting the growth of a targeted crystal face, we successfully demonstrated the preparation of a bulky crystal of L-Phe, which are difficult to be obtained by conventional crystallization methods.
关键词： L-phenylalanine,nano-processing,single crystal growth,crystal shape control,femtosecond laser ablation
更新于2025-09-11 14:15:04
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Scintillation properties and increased vacancy formation in cerium and calcium co-doped yttrium aluminum garnet
摘要： Co-doping with divalent elements is known to improve the light yield and decay times of some cerium-activated scintillators, despite the stabilization of tetravalent Ce4+, previously believed to be non-luminescent, from the Ce3+ state. Ce4+ stabilization is a charge compensation mechanism which results from divalent ion substitution of a 3 + site. To elucidate the underlying mechanisms, which remain poorly understood, we have grown three Ce,Ca:YAG crystals with di?erent amounts of calcium co-dopants by the Czochralski method and characterized their scintillation and defect properties. Calcium co-doping reduces the decay times and stabilizes the formation of Ce4+ as expected. Interestingly, X-ray ?uorescence analysis reveals a decreased concentration of cerium within the YAG crystal for the sample doped with high levels of Ca, which could contribute to the observation that scintillator properties are improved only for low levels of Ca co-doping. Additionally, positron annihilation spectroscopy reveals an increase in the concentration of vacancies with increasing Ca concentration, while thermoluminescence is observed to show no detectable signal. Furthermore, room temperature photo-luminescence of the Ce 4f to 5d1 transition demonstrates decreased emission with increasing Ca co-doping. These data suggest that Ca co-doping decreases the decay time by creating defects with non-radiative decay pathways.
关键词： A2. Czochralski method,B2. Scintillator materials,A2. Single crystal growth,A1. Defects,B3. Scintillators,A1. Doping
更新于2025-09-11 14:15:04
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MORPHOLOGY OF DIAMOND SINGLE CRYSTALS GROWN IN THE Fe-Co-Mg-C SYSTEM
摘要： Diamond single crystals in a Fe-Co alloy with addition of 5 and 10 wt. % Mg by temperature gradient method were grown and their morphology was studied. For crystals obtained in the Fe-Co alloy with 5 wt. % Mg, the faces of octahedron, cube, rhomb-dodecahedron and tetragon-trioctahedron {311} were observed. When the magnesium content in the solvent-alloy increase up to 10 wt. % under the same growth conditions the tetragon-trioctahedron {311} faces on diamond crystals were absent. The topography of diamond crystals faces grown in different systems indicates that octahedron and cube are active growth forms with their growth pyramids, and rhomb-dodecahedron and tetragon-trioctahedron {311} are forms of passive growth.
关键词： A1.Crystal morphology,B1. Diamond,A2. Single crystal growth,A2. Growth from high temperature solutions
更新于2025-09-10 09:29:36