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- 2018
- thin-film transistors
- N2O plasma treatment.
- amorphous InGaZnO
- gate-bias stress
- stability
- Electronic Science and Technology
- Peking University
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Constructing CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> and CH <sub/>3</sub> NH <sub/>3</sub> PbBr <sub/>3</sub> Perovskite Thin Film Electronic Structure from Single Crystal Band Structure Measurements
摘要： Photovoltaic cells based on halide perovskites and possessing remarkably high power conversion efficiencies have been reported. To push the development of such devices further, a comprehensive and reliable understanding of their electronic properties is essential, but presently not available. To provide a solid foundation for understanding the electronic properties of polycrystalline thin films, we employ single crystal band structure data from angle-resolved photoemission measurements. For two prototypical perovskites (CH3NH3PbBr3 and CH3NH3PbI3) we reveal the band dispersion in two high symmetry directions, and identify the global valence band maxima. With these benchmark data, we construct 'standard' photoemission spectra from polycrystalline thin film samples and resolve challenges discussed in the literature of determining the valence band onset with high reliability. Within the framework laid out here, the consistency of relating the energy level alignment in perovskite-based photovoltaic and optoelectronic devices with their functional parameters is substantially enhanced.
关键词： single crystal and thin film perovskites,angle-resolved photoemission,low-energy electron diffraction and density functional theory
更新于2025-09-23 15:22:29
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Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping
摘要： Praseodymium-doped indium zinc oxide (PrIZO) have been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high field effect mobility of 26.3 cm2/Vs, SS value of 0.28 V/decade, and Ion/Ioff ratio of 108. X-ray photoelectron spectroscopy (XPS), microwave photoconductivity decay (Micro-PCD) and photoluminescence spectra (PL) were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.
关键词： Praseodymium doping,negative bias illumination stress,metal oxide,thin film transistor,photo-response
更新于2025-09-23 15:22:29
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Layer by layer deposition of alternate carbon nanotubes and Ni films for efficient multilayer thin film temperature gauges
摘要： This study reports a novel approach for growing multilayer thin films consisting of alternate layers of carbon nanotubes (CNT) and nickel on Si (1 0 0) substrates and justifies their use in thin film temperature sensors. A low pressure chemical vapor deposition system was employed for synthesizing CNT films, while Ni films were deposited by electrodeposition. Porous-Si was used as substrate to increase adhesion between the layers of the multilayer structure. The structure of the multilayer films and the quality of the CNT grown were analyzed using several characterization methods, including scanning electron microscopy, x-ray photoelectron spectroscopy, x-ray auger electron spectroscopy and Raman spectroscopy. The electrical characteristics were investigated using a van der Pauw setup and the effect of the increasing number of CNT layers in the multilayer structure was studied. The sensitivity of the multilayer film was found to increase with increasing number of CNT layers, despite the decrease of the temperature coefficient of resistance. On the other hand, the initial resistance was found to increase. Results indicated that these multilayer structures are appropriate for fabricating highly sensitive thin film gauges that can detect lower heat fluxes with more accuracy.
关键词： carbon nanotubes,thin film gauges,surface and interface chemistry,porous silicon,adhesion sensing,x-ray photoelectron spectroscopy
更新于2025-09-23 15:22:29
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Recent progress on jet printing of oxide-based thin film transistors
摘要： Among the printing technologies for printed electronics, jet printing-based methods provide promising solutions to the fabrication of oxide-based thin film transistors (TFTs) for flexible and non-flexible electronics. Their direct patterning capability, non-vacuum and solution-based material formation process have attracted a significant amount of interests from both the academic and industry sectors. This topical review summarizes recent progress on the development of jet printed metal oxide TFTs with special attention given to the surface related effects, ink preparation and post-printing treatments, which are the critical aspects of obtaining high performance printed TFTs. Firstly, a brief introduction is made on the state of art jet printing technologies: the piezoelectric/thermal inkjet printing, the newly emerged electro-hydrodynamic jet printing and aerosol jet printing. Then, surface related issues of wettability and coffee-ring effect are discussed. At last, jet printing of oxide-based TFTs is reviewed according to the classification of printed material types: metal oxide semiconductors, gate dielectrics and conductive electrodes. The extensive review of low temperature annealing methods made this work particular interesting to the printing of oxide-based TFTs on flexible substrates.
关键词： gate dielectric,jet printing,oxide-based semiconductors,thin film transistors,electrode
更新于2025-09-23 15:22:29
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An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts
摘要： Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I ? V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I ? V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.
关键词： Hydrogen sensing,Zinc oxide (ZnO) thin film,Electrical characteristics,Schottky diode,Metal-semiconductor interface,Palladium catalyst
更新于2025-09-23 15:22:29
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[IEEE 2018 International Flexible Electronics Technology Conference (IFETC) - Ottawa, ON, Canada (2018.8.7-2018.8.9)] 2018 International Flexible Electronics Technology Conference (IFETC) - Flexible Printed Organic Thin-Film Transistor Devices and Integrated Circuit Applications
摘要： The latest developments in flexible and printed electronics technology based on organic thin-film transistor (OTFT) devices as well as printable electronic materials are briefly reported on in this paper. The successful fabrication and operation of printed OTFT devices and a variety of integrated circuit applications such as flip-flop logic gates and operational amplifiers will be demonstrated.
关键词： Organic electronics,Flexible electronics,Organic thin-film transistor,Printed electronics
更新于2025-09-23 15:22:29
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Voids in Kesterites and the Influence of Lamellae Preparation by Focused Ion Beam for Transmission Electron Microscopy Analyses
摘要： Kesterite solar cells based on Cu2 ZnSnS4 and Cu2 ZnSnSe4 (CZTSe) are potential future candidates to be used in thin-film solar cells. The technology still has to be developed to a great extent and for this to happen, high levels of confidence in the characterization methods are required, so that improvements can be made on solid interpretations. In this study, we show that the interpretations of one of the most used characterization techniques in kesterites, scanning transmission electron microscopy (STEM), might be affected by its specimen preparation when using focused ion beam (FIB). Using complementary measurements based on scanning electron microscopy and Raman scattering spectroscopy, compelling evidence shows that secondary phases of ZnSe mixed in the bulk of CZTSe are the likely cause of the appearance of voids in STEM lamellae. Sputtering simulations support this interpretation by showing that Zn in a ZnSe matrix is preferentially sputtered compared with any metal atom in a CZTSe matrix.
关键词： Cu2 ZnSn(S, Se)4 (CZTSSe),thin-film solar cells,transmission electron microscopy (TEM),focused ion beam (FIB),kesterite
更新于2025-09-23 15:22:29
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Design and Mechanism of Embedding Specific Carbon Nanotubes in Sputtered Sandwiched InGaZnO Thin Film Transistors
摘要： Amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with high mobility are highly desirable to achieve high-speed operation in active-matrix displays and large-area sensors. Only a few works provided potential solutions. In this work, we have embedded carbon nanotubes (CNTs) into sputtered a-IGZO film to form a-IGZO/CNT/a-IGZO (ACA) sandwiched channel. In the ACA channel, the CNT percolation networks connected by the a-IGZO film work as high-speed carrier paths to enable faster transport of carriers during the on state while it does not degrade the leakage performance during the off state. The type and the embedding location of the CNT percolation network are critical to determine the ACA device performance, which is analyzed and verified by experiment and simulation. The optimum ACA design has approximately doubled the mobility and the on current density of the TFT. The design owns relatively better uniformity and provides a high-speed TFT solution for the advanced electronics.
关键词： mobility,amorphous indium gallium zinc oxide,carbon nanotube,thin film transistor,sandwiched structure
更新于2025-09-23 15:22:29
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[IEEE NAECON 2018 - IEEE National Aerospace and Electronics Conference - Dayton, OH, USA (2018.7.23-2018.7.26)] NAECON 2018 - IEEE National Aerospace and Electronics Conference - Ultrasensitive label-free tobramycin detection with aptamer-functionalized ZnO TFT biosensor
摘要： Aminoglycoside antibiotic such as tobramycin is critical to the treatment of Gram-negative bacterial diseases such as Cystic Fibrosis (Pseudomonas aeruginosa) and other respiratory problems routinely seen in military personnel. Bottom gate (BG) zinc oxide (ZnO) ultra-thin film transistors (TFTs) were fabricated and functionalized with thiol-anchored aptamers as sensitive tobramycin biosensors and a Lower Detection Limit (LDL) of 0.1 nM was extracted from the adsorption coverage isotherm. Sputter deposition of ZnO allows the control of film thickness, stoichiometry, defects and interface states. Intrinsically high surface morphology of ZnO allows improved aptamer functionalization and sensitivity of detection.
关键词： tobramycin,functionalization,biosensor,sputter deposition,aptamer,cystic fibrosis,thin film transistor,ZnO
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Hong Kong, China (2018.11.5-2018.11.9)] 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Designing thin-film metamaterials by tuning effective ENZ behavior
摘要： Using an effective refractive index calculation, we demonstrate the ability to efficiently tune epsilon-near-zero (ENZ) behavior within compact thin-film stacks. Results show the desired effect of broadening the reflectivity profile and improving absorption for an all-oxide ENZ metamaterial.
关键词： near-zero index,metamaterials,perfect absorption,plasmonic,thin film,ENZ tuning,effective index
更新于2025-09-23 15:22:29