1：Experimental Design and Method Selection:

Bottom-gate staggered structure TFTs were fabricated with Pr-doped indium zinc oxide (PrIZO) as the channel layer using RF magnetron co-sputtering. Various Pr concentrations (0 to 2.98 at%) were tested to analyze effects on performance and stability under illumination.

2：98 at%) were tested to analyze effects on performance and stability under illumination. Sample Selection and Data Sources:

2. Sample Selection and Data Sources: PrIZO thin films were deposited on quartz substrates and patterned for TFT fabrication. Electrical, optical, and chemical characterizations were performed.

3：List of Experimental Equipment and Materials:

Equipment includes RF magnetron co-sputtering system, DC sputtering, PECVD, probe station, Agilent B1500A semiconductor parameter analyzer, XRD (X'Pert-PRO, PANalytical), Hall system (MMR H50), UV-vis spectroscopy (UV-3600, Shimadzu), XPS (ESCALAB 250i), PL spectrometer (Edinburgh FLS 980), micro-PCD system (KOBELCO LTA-1620SP). Materials include Mo, SiO2, Si3N4, IZO and PrIZO ceramic targets (99.99% purity), Ar and O2 gases.

4：99% purity), Ar and O2 gases. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Fabrication involved depositing gate metal and insulator, co-sputtering PrIZO channel, patterning, depositing source/drain electrodes, passivation, and annealing. Measurements included transfer characteristics, photo-response under LED illumination, NBIS tests, and various spectroscopic analyses.

5：Data Analysis Methods:

Data were analyzed using standard methods for mobility, SS, trap density extraction, XPS peak fitting, Tauc plot for band gap, and micro-PCD for carrier dynamics.