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- 2018
- thin-film transistors
- N2O plasma treatment.
- amorphous InGaZnO
- gate-bias stress
- stability
- Electronic Science and Technology
- Peking University
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Elimination of the Hump Current of P-Channel Polycrystalline Silicon Thin-Film Transistor After Positive Bias Stress
摘要： The stability of p-channel low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) under positive bias stress (PBS) is investigated in this paper. Interestingly, it is observed that the transfer curves show different degradation phenomena from the previous reports, i.e., the threshold voltage (Vth) shifts to the negative gate bias direction, and the hump current in the subthreshold region clearly shrinks with the increase of the stress time, and finally disappears under the PBS, which is explained by the creation and accumulation of positive charges in the gate oxide. It is also observed that the hump current in p-channel TFTs is eliminated at a higher temperature and one possible mechanism for the appearance of hump current is proposed.
关键词： thin-film transistors,positive bias stress (PBS),hump current,p-channel
更新于2025-09-23 15:23:52
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Turning electrical switching behaviors in WO <sub/><i>x</i> </sub> thin films by thickness
摘要： The tunability of electrical switching behaviors in WOx thin films were investigated in this paper. Electrical responses of the WOx films were observed to be highly sensitive to the film thickness. As the film thickness increases from 50 to 100 nm, the switching behavior changes from complementary resistive switching (CRS) to threshold switching (TS). A defect-related dynamic evolution of filament is responsible for the switching behavior. Such a controllable electrical switching can well broaden the application of the WOx thin film.
关键词： threshold switching,WOx thin film,Electrical switching behavior,turning,complementary resistive switching
更新于2025-09-23 15:23:52
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Effect of post-annealing on microstructure and piezoelectric properties of ZnO thin film for triangular shaped vibration energy harvester
摘要： In this paper, a triangular shaped piezoelectric vibration energy harvester (TS-PVEH) with zinc oxide (ZnO) thin films as the piezoelectric layer is reported. The effect of post-annealing temperature on the microstructure and piezoelectric performance of ZnO thin film deposited by magnetron sputtering method is investigated firstly. The results show that the optimum post-annealing temperature of 150 °C was the most beneficial to improve the piezoelectric properties of ZnO thin films. Four prototypes of TS-PVEH with different structure parameters are fabricated and optimized. The simulation and experiment results indicate that the height and width of the triangular structure have a significant influence on the vibration mode and the output performance of TS-PVEHs. The optimization results indicate that the third prototype has the best output performance. Its open-circuit voltage and short-circuit current are 290mV and 1.25 μA, respectively, when the vibration acceleration is 5m/s2 and the frequency is 56Hz. Moreover, it has the highest load power density of 0.035μW/cm2 when the load is 0.1MΩ.
关键词： Triangular substrate,ZnO thin film,Structure optimization,Post-annealing temperature,Vibration energy harvester
更新于2025-09-23 15:23:52
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Preparation of multicomponent thin films by magnetron co-sputtering method: The Cu-Ti case study
摘要： The paper discusses the preparation of multicomponent thin films of Cu-Ti composite with desired elemental composition using the pulsed magnetron co-sputtering technology. The technological goal described in the paper was deposition the Cu-Ti composite with elemental ratio of about 50/50 at.%, which is close to the eutectic point from the Cu-Ti alloy system. A large difference in the sputtering yield (about seven-fold) of Cu and Ti metals was challenging, because of the features of used power supplies. Desired concentrations of the Ti and Cu elements were obtained as a result of application of multimagnetron sputtering system, where magnetrons were equipped with the Ti or Cu targets. Additionally, pulse power supply was used together with the pulse width modulation controller. Moreover, the article presents investigations of structural and mechanical properties of deposited Cu, Ti and Cu-Ti films with elemental composition of ca. 50/50 at.%. It was found that the two component Cu0.5Ti0.5 thin films were composed of Cu4Ti3 nanocrystallites built-in an amorphous matrix. As compared to the pure Cu and Ti thin films, the prepared composite exhibited improved hardness and better elasticity reflected in lower values of the Young’s modulus. The results of nanoindentation investigations showed that the Cu0.5Ti0.5 composite thin film was characterized by the hardness of 7.59 GPa.
关键词： thin film,CuTi alloy,multicomponent coating,magnetron sputtering
更新于2025-09-23 15:23:52
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The finite size effect on the transport and magnetic properties of epitaxial Fe <sub/>3</sub> O <sub/>4</sub> thin films
摘要： Magnetite (Fe3O4) has great potential for use in the new field of spintronics due to its interesting physical properties, e.g., half-metallic ferromagnetic nature and metal–insulator transition (Verwey transition). Therefore, a basic understanding of these properties is essential for applications in spintronics devices, especially as the film thickness is reduced. In this work, the transport and magnetic properties of stoichiometric ultra-thin epitaxial Fe3O4 films have been investigated. The Fe3O4 films were grown on MgO (001) substrates using molecular beam epitaxy under optimal growth conditions. Low energy electron diffraction and X-ray photoemission spectroscopy confirmed that the films are single phase Fe3O4. The Verwey transition has been investigated using both transport and magnetization measurements. The magnetization measurements show a sharp Verwey transition in all of these films, which indicates that the films have properties comparable to the bulk. Furthermore, the magnetization measurements at room temperature show that the ultrathin films with thickness t < 20 nm are ferromagnetic with magnetization values greater than those for bulk magnetite. Such enhanced magnetization in ultrathin Fe3O4 films is very promising for spin injection and other applications.
关键词： Verwey Transition,Epitaxial Growth,Magnetization,Fe3O4,Thin Film
更新于2025-09-23 15:23:52
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Optimised Performance of Non-Dispersive Infrared Gas Sensors Using Multilayer Thin Film Bandpass Filters
摘要： In this work, performance improvements are described for a low-power consumption non-dispersive infrared (NDIR) methane (CH4) gas sensor using customised optical thin film bandpass filters (BPFs) centered at 3300 nm. BPFs shape the spectral characteristics of the combined mid-infrared III–V based light emitting diode (LED)/photodiode (PD) light source/detector optopair, enhancing the NDIR CH4 sensor performance. The BPFs, deposited using a novel microwave plasma-assisted pulsed DC sputter deposition process, provide room temperature deposition directly onto the temperature-sensitive PD heterostructure. BPFs comprise germanium (Ge) and niobium pentoxide (Nb2O5) alternating high and low refractive index layers, respectively. Two different optical filter designs are progressed with BPF bandwidths (BWs) of 160 and 300 nm. A comparison of the modelled and measured NDIR sensor performance is described, highlighting the maximised signal-to-noise ratio (SNR) and the minimised cross-talk performance benefits. The BPF spectral stability for various environmental temperature and humidity conditions is demonstrated.
关键词： III–V,sensor,methane,thin film,MBE,NDIR,microwave,bandpass,sputter,heterostructure,infrared
更新于2025-09-23 15:23:52
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Tuning Material Properties of ZnO Thin Films for Advanced Sensor Applications
摘要： We report on the growth of ZnO thin films by plasma-enhanced atomic layer deposition as a function of substrate temperature. The method to ensure self-limiting growth with precise thickness control is discussed and the effect of temperature on the texture of the thin films is presented. Switching the texture from (100) to (002) by increasing the substrate temperature is a key property for functional devices. The ZnO thin films with tailored properties could find applications in a wide range of sensors and actuators.
关键词： atomic layer deposition,ZnO,thin film,semiconductor
更新于2025-09-23 15:23:52
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Effects of Withdrawal Speeds on Properties of ZnO Thin Films Prepared by Sol-Gel Immerse Technique
摘要： ZnO thin films have attractive applications in photoelectric device, due to their excellent chemical, electrical and optical properties. In this paper, ZnO thin films with good c-axis preferred orientation and high transmittance are prepared on glass sheets by sol-gel immerse technique. The effects of withdrawal speeds on the growth process of thin film crystal, film crystal orientation and the crystallinity, the optical performance were investigated by XRD, SEM and UV-Vis spectrophotometry. The results show that the thin films were composed of better hexagonal wurtzite crystals with the c-axis prepared orientation. The transmittance of prepared thin films is over 80% in the visible-near IR region from 600 nm - 800 nm. ZnO films have sharp and narrow diffraction peaks, which indicates that the materials exhibit high crystallinity. With the withdrawal speeds increasing, the grain size of ZnO thin films and the intensity for all diffraction peaks were increased gradually. The growth model is changed from the stratified structure into the island structure in the growth process. The transmittance of the thin films decrease in the visible wavelength region, with the withdrawal speeds increasing.
关键词： Withdrawal speeds,ZnO thin film,C-axis preferred orientation,Sol-gel technique
更新于2025-09-23 15:23:52
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A comparative ab initio study of the structural, mechanical, electronic and optical behaviors of ZnO:Ni thin films with nanometer scale
摘要： The electronic and optical properties of undoped and Ni–doped ZnO thin films with nanometer scale have been studied in the wurtzite phase, by first–principle approach. Density functional theory has been employed to calculate the fundamental properties of the films using full–potential linearized augmented plane–wave method. Ni doping was found to reduce the bandgap value of the material. Additionally, DOS effective mass of the electrons was evaluated. It was revealed that the effective mass of the electrons at the bottom of conduction band increased with Ni doping. Decrease of reflectance for thin films with nanometer scale in the UV–vis region was observed. The substitution by Ni decreased the intensity of the peaks, and a red shift was observed in the absorption peak. Moreover, the static dielectric constant, and static refractive index decreased with Ni content. Energy loss function of the modeled compounds was also evaluated. All calculated parameters were compared with the available experimental and other theoretical results.
关键词： DFT,band structure,structural properties,electronic behaviors,optical properties,ZnO:Ni thin film
更新于2025-09-23 15:23:52
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Effect of substrate temperature on the physical properties of SnS <sub/>2</sub> :Cu thin films deposited by spray pyrolysis
摘要： The main impetus of the present study is to investigate thin films of tin disulfide that have been doped with copper impurities and prepared on glass substrates by using the spray pyrolysis technique. Also, the influence of the substrate temperature on the structural, optical, and electrical properties of these films are investigated. The thin films have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical absorption (UV–vis) analyses. The XRD patterns clarify that the thin films possess polycrystalline structures, having a peak associated with the (001) plane of the SnS2 phase. The average crystalline grain sizes were estimated to be within the range 5.7–7.1 nm. The SEM images indicate that the grain size increases from 53 to 114 nm with an increment in the substrate temperature, resulting in an increasing–decreasing trend in the band gap of the thin films. However, the films’ resistance decreases from 92.5 to 0.174 Ω·cm as the substrate temperature increases from 400 to 450 °C. Also, their optical energy band gap depicts an increasing–decreasing trend with the estimated values of 2.81, 3.21, and 3.06 eV at 400, 425, and 450 °C, respectively. The thin films exhibit n-type conductivity.
关键词： polycrystalline,spray pyrolysis,thin film
更新于2025-09-23 15:23:52