研究目的
To investigate the effect of post-annealing temperature on the microstructure and piezoelectric properties of ZnO thin films and to design and optimize a triangular shaped piezoelectric vibration energy harvester (TS-PVEH) for improved performance.
研究成果
The optimal post-annealing temperature for ZnO thin films is 150°C, enhancing piezoelectric properties. TS-PVEH prototypes outperform rectangular ones, with prototype TC3 showing the highest output (290mV open-circuit voltage, 1.25μA short-circuit current, and 0.035μW/cm2 power density at 56Hz and 5m/s2 acceleration). Structural parameters significantly affect performance, and further optimizations could improve energy harvesting efficiency.
研究不足
The study is limited to specific annealing temperatures and triangular geometries; the simulation neglects electrode and PMMA layers, leading to discrepancies with experimental results. Optimization is based on a finite set of prototypes, and the power output is relatively low for practical applications.
1：Experimental Design and Method Selection:
The study involves depositing ZnO thin films using RF magnetron sputtering, post-annealing at various temperatures, and fabricating TS-PVEH prototypes. FEM simulation using ANSYS software is employed for structural optimization.
2：Sample Selection and Data Sources:
Stainless steel substrates are used, with ZnO films deposited and annealed at 100°C, 150°C, 200°C, and 250°C. Four TS-PVEH prototypes with different triangular dimensions are fabricated.
3：List of Experimental Equipment and Materials:
Equipment includes RF magnetron sputtering machine (MSP-3200), annealing furnace, SEM (Hitachi S-4800), XRD (MAC M18XHF), shaker (SINOCERA JZK-5), function waveform generator (AFG-2112), power amplifier (SINOCERA YE5871A), accelerometer (SINOCERA CA-YD-1107), vibration monitor (SINOCERA YE5932B), electrometer (Keithley 6514), NI DAQ, and LabVIEW interface. Materials include stainless steel, ZnO, PMMA, AZO, Ar, O
4：Experimental Procedures and Operational Workflow:
Substrates are cleaned, ZnO films are sputtered and annealed, PMMA and AZO layers are added, prototypes are fabricated, and electrical output is measured under controlled vibrations.
5：Data Analysis Methods:
XRD and SEM for microstructure analysis, FEM simulation for stress distribution, and electrical measurements for output performance using statistical analysis of voltage, current, and power.
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SEM
S-4800
Hitachi
Used for measuring surface and cross-sectional morphology of the film.
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Electrometer
6514
Keithley
Used to collect open-circuit voltage and short-circuit current.
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RF magnetron sputtering machine
MSP-3200
Used for depositing ZnO thin films on substrates.
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XRD
M18XHF
MAC
Used for analyzing the crystallinity of the ZnO film.
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Shaker
JZK-5
SINOCERA
Used to supply mechanical vibration to the prototypes.
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Function waveform generator
AFG-2112
Used to supply sine wave signals to the shaker.
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Power amplifier
YE5871A
SINOCERA
Used to amplify signals for the shaker.
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Accelerometer
CA-YD-1107
SINOCERA
Used to measure the acceleration of vibration.
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Vibration monitor
YE5932B
SINOCERA
Used to monitor vibration parameters.
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Four-Point Probe
RTS-9
Probes Tech
Used to measure the resistivity of AZO thin film.
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